for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com low noise amplifiers - smt 8 8 - 366 gaas hemt mmic low noise amplifier, 1 - 11 ghz v01.0609 general description features functional diagram noise figure: 1.5 db @ 4 ghz gain: 17 db p1db output power: +18 dbm supply voltage: +5v @ 55 ma output ip3: +30 dbm 50 ohm matched input/output 24 lead plastic 4x4mm smt package: 16mm 2 electrical specifi cations , t a = +25 c, vdd= +5v, idd = 55 ma [2] typical applications this HMC753LP4E is ideal for: ? point-to-point radios ? point-to-multi-point radios ? military & space ? test instrumentation the HMC753LP4E is a gaas mmic low noise wideband amplifi er housed in a leadless 4x4 mm plastic surface mount package. the amplifi er oper- ates between 1 and 11 ghz, providing up to 16.5 db of small signal gain, 1.5 db noise fi gure, and output ip3 of +30 dbm, while requiring only 55 ma from a +5v supply. the p1db output power of up to +18 dbm enables the lna to function as a lo driver for balanced, i/q or image reject mixers. the hmc- 753lp4e also features i/os that are dc blocked and internally matched to 50 ohms, making it ideal for high capacity microwave radios or vsat applications. this versatile lna is also available in die form as the hmc-alh444. HMC753LP4E parameter min. typ. max. min. typ. max. units frequency range 1 - 6 6 - 11 ghz gain 14 16.5 10 14 db gain variation over temperature 0.004 0.008 db / c noise figure 1.5 2 2 2.7 db input return loss 11 8 db output return loss 18 12 db output power for 1 db compression 18 15 dbm saturated output power (psat) 20 17 dbm output third order intercept (ip3) 30 28 dbm supply current (idd) (vdd = 5v, set vgg2 = 1.5v, vgg1 = -0.8v typ.) 55 55 ma
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com low noise amplifiers - smt 8 8 - 367 HMC753LP4E v01.0609 gaas hemt mmic low noise amplifier, 1 - 11 ghz gain vs. temperature [1] output return loss vs. temperature broadband gain & return loss [1] input return loss vs. temperature output ip3 vs. temperature noise figure vs. temperature [1] [1] board loss subtracted out for gain, power and noise fi gure measurement -25 -15 -5 5 15 25 02468101214 s11 s22 s21 response (db) frequency (ghz) -25 -20 -15 -10 -5 0 1357911 +25c +85c -40c return loss (db) frequency (ghz) 0 2 4 6 8 10 1357911 +25c +85c -40c noise figure (db) frequency (ghz) -25 -20 -15 -10 -5 0 1357911 +25c +85c -40c return loss (db) frequency (ghz) 10 12 14 16 18 1357911 +25c +85c -40c gain (db) frequency (ghz) 5 10 15 20 25 30 35 1357911 +25c +85c -40c ip3 (dbm) frequency (ghz)
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com low noise amplifiers - smt 8 8 - 368 HMC753LP4E v01.0609 gaas hemt mmic low noise amplifier, 1 - 11 ghz psat vs. temperature [1] power compression @ 21 ghz [1] p1db vs. temperature [1] reverse isolation vs. temperature gain, noise figure & power vs. supply voltage @ 21 ghz [1] [1] board loss subtracted out for gain, power and noise fi gure measurement -4 0 4 8 12 16 20 24 -20 -15 -10 -5 0 5 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -60 -50 -40 -30 -20 -10 0 1357911 +25c +85c -40c isolation (db) frequency (ghz) 4 8 12 16 20 24 1357911 +25c +85c -40c psat (dbm) frequency (ghz) 0 5 10 15 20 25 1357911 +25c +85c -40c p1db (dbm) frequency (ghz) 8 10 12 14 16 18 20 22 0 1 2 3 4 5 6 7 4.5 5 5.5 gain (db), p1db (dbm) noise figure (db) vdd (v)
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com low noise amplifiers - smt 8 8 - 369 outline drawing absolute maximum ratings electrostatic sensitive device observe handling precautions drain bias voltage +6.0v rf input power 12 dbm gate bias voltage, vgg1 -1 to 0.3v gate bias voltage, vgg2 0 to 2.5v channel temperature 180 c continuous pdiss (t = 85 c) (derate 8.4 mw/c above 85 c) 0.8 w thermal resistance (channel to die bottom) 119 c/ w storage temperature -65 to +150 c operating temperature -40 to +85 c HMC753LP4E v01.0609 gaas hemt mmic low noise amplifier, 1 - 11 ghz notes: 1. package body material: low stress injection molded plastic silica and silicon impregnated. 2. lead and ground paddle material: copper alloy. 3. lead and ground paddle plating: 100% matte tin 4. dimensions are in inches [millimeters]. 5. lead spacing tolerance is non-cumulative. 6. pad burr length shall be 0.15mm max. pad burr height shall be 0.05mm max. 7. package warp shall not exceed 0.05mm 8. all ground leads and ground paddle must be soldered to pcb rf ground. 9. refer to hittite application note for suggested pcb land pattern. part number package body material lead finish package marking [1] HMC753LP4E rohs-compliant low stress injection molded plastic 100% matte sn [2] 753 xxxx [1] 4-digit lot number xxxx [2] max peak refl ow temperature of 260 c package information
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com low noise amplifiers - smt 8 8 - 370 HMC753LP4E v01.0609 gaas hemt mmic low noise amplifier, 1 - 11 ghz pin number function description interface schematic 1, 2, 4 - 7, 12 - 15, 17 - 19, 24 gnd package bottom has exposed metal paddle that must be connected to rf/dc ground. 3rfin this pad is ac coupled and matched to 50 ohms. 8, 9 vgg2, 1 gate control for amplifi er. please follow mmic amplifi er bias- ing procedure application note. see assembly for required external components. 10 vdd power supply voltage for the amplifi er. see assembly for required external components. 11, 20 - 23 n/c 16 rfout this pad is ac coupled and matched to 50 ohms. pin descriptions application circuit
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com low noise amplifiers - smt 8 8 - 371 HMC753LP4E v01.0609 gaas hemt mmic low noise amplifier, 1 - 11 ghz item description j1, j2 sma connector j3 - j6 dc pin c1 - c3 100pf capacitor, 0402 pkg. c4 - c6 10,000pf capacitor, 0603 pkg. c7 - c9 4.7 f capacitor, tantalum u1 HMC753LP4E amplifi er pcb [2] 122824 evaluation pcb [3] [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 or arlon 25fr list of material for evaluation pcb 122826 [1] the circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appro- priate heat sink. the evaluation circuit board shown is available from hittite upon request. evaluation pcb
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