shantou huashan electronic devices co.,ltd . HTM4A60 insulated type triac (to-126ml package) ? f e a t u r e s * repetitive peak off-s tate v o ltage: 600v * r.m.s on-state curr ent(i t(rms) =4a) * high c o mmutation dv/dt ? g e n e r a l d e s c r i p t i o n the t r iac h t m4a 60 is suitable for a c sw itching application, phase control application such as heater control, m o tor control, lighting control, and static sw itching relay . ? absolute maximum ratings ? t a =25 ??? t stg ?a?a s t or age t e m p er a t ur e ?-?- ?-?-?- ?-?-?-?- ?- ?-?-?-?- ?- ?-?-?-?- ?- ?-?-?-?- ?- - 40~125 ?? t j ?a?a opera ting juncti on t e m p erature ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- - 40 ~1 25 ?? p gm ?a?a peak gate po wer dissip a tion ?- ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- 1. 5w v drm ?a?a re pet iti ve pea k of f-s tate v o lt age ?-?-?-?- ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- 6 00v i t ? rms ??a?a r.m.s on- s tate curre nt ? ta = 6 6 ??? ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- 4. 0a v gm ?a?a pea k ga te v o l t ag e ?- ?- ?- ?-?-?-?-?- ?-?-?-?-?- ?-?-?-?-?- ?-?-?-?-?- ?- 7. 0 v i gm ?a?a peak ga te c u rrent ?-?- ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- 0. 5a i ts m ?a?a sur g e on-state current (one cy cle, 5 0 /60hz,pea k ,non-repet i t i ve) ?-?-?- 30/ 33a ? electrical characteristics ? t a =25 ??? s y m b o l i t e m s min. t y p. max. unit c o n d i t i o n s i drm repetitive peak of f-s tate current 1.0 m a v d =v drm , s i n g l e ph a s e, half w a v e , t j =125 ?? v tm peak on-state voltage 1 . 6 v i t =6a, inst. measurem ent i+ gt1 gate trigger current ??? 2 0 m a v d =6v , r l =10 ohm i- gt1 gate trigger current ?v? 2 0 m a v d =6v , r l =10 ohm i- gt3 gate trigger current ?t? 2 0 m a v d =6v , r l =10 ohm v+ gt1 gate trigger voltage ??? 1 . 5 v v d =6v , r l =10 ohm v- gt1 gate trigger voltage ?v? 1 . 5 v v d =6v , r l =10 ohm v- gt3 gate trigger voltage ?t? 1 . 5 v v d =6v , r l =10 ohm v gd n on-trigger g a te v o ltage 0.2 v t j =125 ?? ,v d =1/2v drm (dv/dt)c critical rate of rise of off-state voltage at com m u tation 5 . 0 v / s t j =125 ?? ,v d =2/3v drm (di/dt)c= - 3a /m s i h h o lding current 5 . 0 m a rth(j-c) therm a l resistance 3 . 5 ?? /w junction to case
shantou huashan electronic devices co.,ltd . HTM4A60 ? performance curves f i g 1. gate ch aracteristics fig 2. on-state voltage on-state current [ a ] gate v o ltage (v) gate current (ma) on-state v o ltage [v] fig 3 . ga te trigge r volta g e v s . j unc tion fig 4 . on sta t e curre nt v s . ma x i mum t e m p e r a t u r e p o w e r d i s s i p a t i o n power dissipation [w] junction t e m p erature [ ?? ] rms on-state current [ a ] f i g 5 . o n s t a t e c u r r e n t v s . f i g 6 . s u r g e o n - s t a t e c u r r e n t r a t i n g a llo w a b l e case t e mp eratu r e ( no n - rep e titiv e ) allowable case t e mp. [ ?? c] sur g e on-state current [a] rms on-state current [ a ] ti m e ? cycles ?
shantou huashan electronic devices co.,ltd . HTM4A60 f i g 7 . g a t e t r i g g e r c u r r e n t v s . f i g 8 . t r a n s i e n t t h e r m a l i m p e d a n c e j u n c t i o n t e m p e r a t u r e t r an sien t t h e rmal im p ed an ce [ ?? /w ] junction t e m p erature [ ?? ] time ? sec ? f i g 9. gate t r ig g e r ch aracteristics t est circu i t 10 |? 10 |? 10 |? test procedure ? test procedure v test procedure t
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