sot-323 plastic-encapsulate mosfets n-channel mosfet features z low on-resistance z fast switching speed z low voltage drive makes this device ideal for portable equipment z easily designed drive circuits z easy to parallel marking: kn equivalent circuit mosfet maximum ratings (t a = 25c unless otherwise noted) symbol parameter value units v ds drain-source voltage 30 v v gss gate-source voltage 20 v i d continuous drain current 0.1 a p d power dissipation 0.2 w t j junction temperature 150 t stg storage temperature -55-150 r ja thermal resistance from junction to ambient 625 /w parameter symbol test condition min typ max units off characteristics drain-source breakdown voltage v(br) ds s v gs = 0v, i d = 10a 30 v zero gate voltage drain current i dss v ds =30v,v gs = 0v 0.2 a gate ?source leakage current i gss v gs = 20 v, v ds = 0v 500 na gate threshold voltage v gs(th) v ds = 3v, i d =100a 0.8 1.5 v v gs = 4v, i d =10ma 8 ? drain-source on-resistance r ds(on) v gs =2.5v,i d =1ma 13 ? forward transconductance g fs v ds =3v, i d = 10ma 20 ms dynamic characteristics * input capacitance c iss 13 pf output capacitance c oss 9 pf reverse transfer capacitance c rss v ds =5v,v gs =0v,f =1mhz 4 pf switching characteristics * turn-on delay time t d(on) 15 ns rise time t r 35 ns turn-off delay time t d(off) 80 ns fall time t f v gs =5v, v dd =5v, i d =10ma, r g =10 ? , r l =500 ? 80 ns sot-323 1. gate 2. source 3. drain mosfet electrical characteristics(t a =25 unless otherwise noted) *these parameters have no way to verify. 1 2 3 2sk3018w t1 2012-0 willas electronic corp. z
012345 0.00 0.05 0.10 0.15 0.20 1 10 100 0 20 40 60 0 5 10 15 20 0 5 10 15 01234 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 v gs =2.5v 4.0v 3.5v t a =25 pulsed output characteristics v gs =3.0v v gs =2.0v v gs =1.5v drain current i d (a) drain to source voltage v ds (v) t a =25 pulsed i d r ds(on) v gs = 2.5v v gs = 4v on-resistance r ds(on) ( ) drain current i d (ma) 30 0.3 3 3 30 typical characteristics t a =25 pulsed i d =100ma i d =50ma v gs r ds(on) on-resistance r ds(on) ( ) gate to source voltage v gs (v) 0.3 30 3 200 200 v ds =3v t a =25 pulsed transfer characteristics 200 drain current i d (ma) gate to source voltage v gs (v) v sd i s v gs =0v t a =25 pulsed source current i s (ma) source to drain voltage v sd (v) 2012-0 willas electronic corp. sot-323 plastic-encapsulate mosfets 2sk3018w t1
outline drawing dimensions in inches and (millimeters) sot-323 rev.d .056(1.40) .047(1.20) .096(2.45) .078(2.00) .004(0.10)min. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .008(0.20) .004(0.10)max. .087(2.20) .070(1.80) .054(1.35) .045(1.15) 2012-0 willas electronic corp. sot-323 plastic-encapsulate mosfets 2sk3018w t1
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