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| da227/dan202k/DAN202U/dan222 diodes dap202k/dap202u/dap222 switching diode da227 dan202k / DAN202U / dan222 dap202k / dap202u / dap222 z z z z application ultra high speed switching z z z z features 1) four types of packaging are available. 2) high speed. (t rr =1.5ns typ.) 3) suitable for high packing density layout. 4) high reliability. z z z z construction silicon epitaxial planar z z z z marking dan222 DAN202U dan202k dap222 dap202u dap202k da227 n p n20 z z z z external dimensions (units : mm) 2.80.2 1.6 0.3~0.6 0.15 0.4 0~0.1 1.1 0.80.1 2.90.2 1.90.2 0.95 0.95 +0.2 -0.1 +0.2 -0.1 +0.1 -0.06 +0.1 -0.05 (all pins have the same dimensions) 2.10.1 1.250.1 0.1min. 0~0.1 0.150.05 0.30.1 2.00.2 1.30.1 0.65 0.65 0.90.1 0.3 0.6 0.2 0.2 0.5 0.5 1.00.1 1.60.2 0.3 0.8 0.1 1.6 0.2 -0.05 +0.1 +0.1 -0.05 +0.1 -0.05 0.550.1 0.70.1 0.150.05 0~0.1 0.1min. dan202k / dap202k DAN202U / dap202u dan222 / dap222 rohm : umd3 eiaj : sc - 70 jedec : sot - 323 rohm : smd3 eiaj : sc - 59 jedec : sot - 346 (all pins have the same dimensions) 2.10.1 1.250.1 0.1min. 0~0.1 0.90.1 0.7 2.00.2 1.30.1 0.65 0.65 1.250.1 0.6 0.65 0.150.05 0.30.1 0.20.1 0.20.1 0.20.1 da227 rohm : umd4 eiaj : sc - 82 jedec : sot - 343 rohm : emd3 eiaj : sc - 75 jedec : sot - 416
da227/dan202k/DAN202U/dan222 diodes dap202k/dap202u/dap222 z z z z circuits dan202k DAN202U dan222 dap202k dap202u dap222 da227 z z z z absolute maximum ratings (ta=25 c) type peak reverse voltage v rm (v) dc reverse voltage v r (v) peak forward current i fm (ma) surge current (1s) i surge (a) mean rectifying current i o (ma) power dissipation (total) pd (mw) junction temperature tj (oc) storage temperature tstg (oc) p / n type dan202k 80 80 300 100 4 200 150 n dap202k 80 80 300 100 4 200 150 p DAN202U 80 80 300 100 4 200 150 n dap202u 80 80 300 100 4 200 150 p dan222 80 80 300 100 4 150 150 n dap222 80 80 300 100 4 150 150 p 80 80 300 100 150 150 n da227 4 ? 55~ + 150 ? 55~ + 150 ? 55~ + 150 ? 55~ + 150 ? 55~ + 150 ? 55~ + 150 ? 55~ + 150 z z z z electrical characteristics (ta=25 c) type forward voltage reverse current capacitance between terminals reverse recovery time cond. v f (v) max. c t ( pf ) max. cond. cond. i r ( a ) max. t rr ( ns ) max. cond. i f ( ma ) v r (v) f (mhz) v r (v) v r (v) i f ( ma ) dan202k 1.2 100 0.1 70 3.5 6 1 4 6 5 dap202k 1.2 100 0.1 70 3.5 6 1 4 6 5 DAN202U 1.2 100 0.1 70 3.5 6 1 4 6 5 dap202u 1.2 100 0.1 70 3.5 6 1 4 6 5 dan222 1.2 100 0.1 70 3.5 6 1 4 6 5 dap222 1.2 100 0.1 70 3.5 6 1 4 6 5 1.2 100 0.1 70 3.5 6 1 4 6 5 da227 da227/dan202k/DAN202U/dan222 diodes dap202k/dap202u/dap222 z z z z electrical characteristic curves (ta=25 c) 0 0 125 100 75 50 25 25 50 75 100 125 150 ambient temperature :ta ( o c) power dissipation : p d / p d max.(%) fig.1 power attenuation curve ? 30 o c 0 0.1 0.2 0.5 1 2 5 10 20 50 0.2 0.4 0.6 0.8 1.0 1.2 0 o c ta=85 o c 25 o c 50 o c forward current : i f ( ma) forward voltage : v f ( v) 1.4 1.6 fig.2 forward characteristics (p type) ta=100 o c 0 75 o c 50 o c 25 o c 0 o c ? 25 o c 1000 100 10 0.1 0.01 10 20 30 40 50 reverse current : i r (n a) reverse voltage : v r ( v) 1 fig.3 reverse characteristics (p type) 0 0.1 0.2 0.5 1 2 5 10 20 50 0.2 0.4 0.6 0.8 1.0 1.2 0 o c ? 30 o c ta=85 o c 50 o c 25 o c 1.4 1.6 forward current : i f ( ma) forward voltage : v f ( v) fig.4 forward characteristics (n type) reverse current : i r ( na) reverse voltage : v r ( v) fig.5 reverse characteristics (n type) 0.01 100 1000 10 0.1 1 10 20 30 40 80 70 60 50 0 ta = 100 c 75 c 50 c 25 c ? 25 c 0 c 0 0 4 2 2 4 6 8 10 12 14 16 p type n type f=1mhz capacitance between terminals : c t ( pf) reverse voltage : v r ( v) 18 20 fig.6 capacitance between terminals characteristics 0 0 10 9 8 7 6 5 4 3 2 1 10 9 8 7 6 5 4 3 2 1 p type n type v r = 6v reverse recovery time : t rr ( ns) forward current : i f ( ma) fig.7 reverse recovery time pulse generator output 50 ? sampling oscilloscope 50 ? 0.01f 100ns input d.u.t. i r 0.1i r t rr output 0 5 ? fig.8 reverse recovery time (t rr ) measurement circuit |
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