super fast recovery diode RFU02VS8S ? series ? dimensions (unit : mm) ? land size figure (unit : mm) ultra fast recovery ? applications high frequency rectification ? features 1)small mold type.(tumd2s) ? structure 2)high switching speed ? construction silicon epitaxial planer ? absolute maximum ratings (ta=25 ?c) symbol limits unit v rm 800 v v r 800 v tj 150 ?c tstg ? 55 to ? 150 ?c ? electrical characteristics (tj=25 ?c) symbol min. typ. max. unit v f 2.2 3.0 v i r 0.01 10 a trr 20 35 ns trr 13 25 ns thermal capacitance ct 4 pf reverse voltage repetitive peak reverse voltage ? taping dimensions (unit : mm) parameter conditions 60hz half sin wave, non-repetitive one cycle peak value, tj=25c average rectified forward current io storage temperature junction temperature forward current surge peak i fsm reverse current forward voltage parameter reverse recovery time i f =0.1a,i r =0.2a,irr=0.1i r v r =0v,f=1mhz reverse recovery time conditions i f =0.2a v r =800v i f =0.1a,i r =0.1a,irr=0.1i r d 0.5 direct voltage glass epoxy substrate mounted r-road, 60hz half sin wave 0.2 1 a a rohm : tumd2s dot (year week factory) + day 1.30.05 0.80.05 2.50.2 1.90.1 0.60.2 0.1 0.170.1 0.05 tumd2s 1.1 2.3 0.8 4.00.1 2.00.05 1.550.1 0 1.430.05 4.00.1 1.00.2 0 2.75 3.50.05 1.750.1 8.00.2 0.250.05 0.90.08 2.80.05 1/4 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RFU02VS8S 0.001 0.01 0.1 1 0 1 2 3 4 forward voltage v f (v) v f - i f characteristics forward current:i f (a) tj=125 c tj=25 c tj=150 c tj=75 c 1 10 100 1000 10000 0 200 400 600 800 tj=150 c tj=25 c tj=125 c tj=75 c reverse current:i r (na) reverse voltage v r (v) v r - i r characteristics 0.1 1 10 0 5 10 15 20 25 30 f=1mhz capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics 1800 1900 2000 2100 2200 2300 2400 2500 2600 v f dispersion map forward voltage:v f (mv) ave:2139mv tj=25 c i f =0.2a n=20pcs 1 10 100 1000 reverse current:i r (na) i r dispersion map tj=25 c v r =800v n=20pcs ave:26.8na 0 1 2 3 4 5 6 7 8 9 10 ave:3.98pf tj=25 c f=1mhz v r =0v n=10pcs capacitance between terminals:ct(pf) ct dispersion map 2/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RFU02VS8S 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j - l) 0 1 2 3 4 5 6 7 8 9 10 ave:3.7a 8.3ms i fsm 1cyc i fsm dispersion map its ability of peak surge forward current:i fsm (a) 0 5 10 15 20 25 30 35 40 ave:20.6ns tj=25 c i f =0.1a i r =0.1a irr=0.1*i r n=10pcs trr dispersion map reverse recovery time:trr(ns) 0.1 1 10 100 1 10 100 8.3ms i fsm 1cyc 8.3ms peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 0.1 1 10 100 1 10 100 t i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 c=100pf r=1.5k c=200pf r=0 ave:1.17kv ave:2.22kv electrostatic discharge test esd(kv) esd dispersion map time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) rth(j - a) on glass - epoxy substrate soldering land 6mm 3/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RFU02VS8S 0 0.2 0.4 0.6 0.8 1 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 d.c. d=0.5 half sin wave d=0.8 forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0 30 60 90 120 150 d.c. d=0.5 half sin wave d=0.8 t tj=150 c d=t/t t v r io v r =640v 0a 0v on glass - epoxy substrate soldering land 6mm ambient temperature:ta( c ) derating curve (io - ta) average rectified forward current:io(a) 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0 30 60 90 120 150 d.c. d=0.5 half sin wave d=0.8 average rectified forward current:io(a) case temperature:tl( c ) derating curve (io - tl) t tj=150 c d=t/t t v r io v r =640v 0a 0v 4/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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