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0 5 10 15 20 0 5 10 15 20 2SK2676 transfer characteristics v ds = 25v typ tc = - 55 c 25 c 100 c 150 c gate-source voltage v gs [v] drain current i d [a]
static drain-source on-state resistance 0.01 0.1 1 10 100 -50 0 50 100 150 2SK2676 v gs = 10v pulse test typ i d = 5.0a case temperature tc [ c] static drain-source on-state resistance r ds(on) [ w ]
gate threshold voltage 0 1 2 3 4 5 6 -50 0 50 100 150 2SK2676 v ds = 10v i d = 1ma typ case temperature tc [ c] gate threshold voltage v th [v]
safe operating area 0.01 0.1 1 10 100 1 10 100 1000 2SK2676 100 m s tc = 25 c single pulse 200 m s 1ms 10ms dc drain-source voltage v ds [v] drain current i d [a] r ds(on) limit
transient thermal impedance 0.01 0.1 1 10 2SK2676 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 time t [s] transient thermal impedance q jc(t) [ c/w]
0 20 40 60 80 100 0 50 100 150 2SK2676 single avalanche energy derating [%] starting channel temperature tch [ c] single avalanche energy derating
capacitance 1 10 100 1000 10000 0 20 40 60 80 100 2SK2676 0.005 f=1mhz ta=25 c typ ciss coss crss drain-source voltage v ds [v] capacitance ciss coss crss [pf]
single avalanche current - inductive load 1 10 2SK2676 0.1 1 10 100 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 v dd = 100v v gs = 15v ? 0v rg = 35 w i as = 10a e as = 260mj e ar = 26mj inductance l [mh] single avalanche current i as [a]
0 20 40 60 80 100 0 50 100 150 2SK2676 power derating power derating [%] case temperature tc [ c]
0 50 100 150 0 100 200 300 400 500 2SK2676 0 5 10 15 20 200v gate charge characteristics i d = 10a typ 100v v dd = 400v v gs v ds gate charge qg [nc] drain-source voltage v ds [v] gate-source voltage v gs [v]

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