aug. 1999 pin configuration mitsubishi semiconductor m54537p/fp 7-unit 350ma transistor array description m54537p and m54537fp are seven-circuit transistor arrays. the circuits are made of npn transistors. both the semicon- ductor integrated circuits perform high-current driving with extremely low input-current supply. features medium breakdown voltage (bv ceo 3 20v) high-current driving (ic(max) = 350ma) driving available with pmos ic output low collector-emitter saturation voltage (v ce(sat) is 0.5v when i c is 250ma) wide operating temperature range (ta = C20 to +75 c) application drives of relays and printers, digit drives of indication ele- ments (leds and lamps), and mos-bipolar logic ic inter- faces function the m54537p and m54537fp each have seven circuits con- sisting of npn transistors. resistance of 2k w is connected to the inputs. the output transistor emitters are connected to the gnd pin (pin 8). v cc is connected to pin 9. the collector current is 350 ma maximum. collector-emitter supply voltage is 20v maximum. the collector-emitter saturation voltage is as low as 0.5 v or even lower, when i c is 250ma. the m54537fp is enclosed in a molded small flat package, enabling space-saving design. circuit diagram 10 C0.5 ~ +20 350 C0.5 ~ +10 1.47(p)/1.00(fp) C20 ~ +75 C55 ~ +125 v cc v ceo i c v i p d t opr t stg v v ma v w c c 20k 380 2k 2k gnd v cc input output the diode, indicated with the dotted line, is parasitic, and cannot be used. unit : w the seven circuits share the v cc and gnd. ratings unit symbol parameter conditions absolute maximum ratings (unless otherwise noted, ta = C20 ~ +75 c) supply voltage collector-emitter voltage collector current input voltage power dissipation operating temperature storage temperature output, h current per circuit output, l ta = 25 c, when mounted on board 1 in1 ? in2 ? in3 ? in4 ? in5 ? in6 ? in7 ? v cc gnd 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 ? o7 ? o6 ? o5 ? o4 ? o3 ? o2 ? o1 ? ? ? ? ? ? y ? ? ? ? ? ? t ? ? ? ? ? ? ? ? ? ? ? ? ? 16p4(p) package type 16p2n-a(fp) input output
aug. 1999 mitsubishi semiconductor m54537p/fp 7-unit 350ma transistor array recommended operating conditions (unless otherwise noted, ta = C20 ~ +75 c) v ma v ce (sat) i i v v v v 8 20 6 0.3 0 0 ma 3 0 3 0 250 150 0.5 0.35 1.5 5.6 27 v ma v cc = 8v, i ceo = 100 m a v i = 3v, v cc = 6.5v, i c = 250ma v i = 3v, v cc = 3v, i c = 150ma v cc = 8v, v i = 3.2v v cc = 8v, v i = 8v v cc = 8v, v i = 3.2v v ce = 4v, v cc = 6.5v, i c = 250ma, ta = 25 c v (br) ceo i cc h fe symbol unit parameter test conditions limits min typ + max 20 1000 0.28 0.17 0.7 2.9 17 7000 + : the typical values are those measured under ambient temperature (ta) of 25 c. there is no guarantee that these values are obtained under any conditions. ns ns t on t off 15 840 symbol unit parameter test conditions limits min typ max timing diagram note 1 test circuit symbol parameter min typ max unit limits v cc v o v ih v il i c supply voltage output voltage h input voltage l input voltage collector current (current per 1 cir- cuit when 7 circuits are coming on si- multaneously) v cc = 6.5v, duty cycle p : no more than 60% fp : no more than 40% v cc = 6.5v, duty cycle p : no more than 40% fp : no more than 25% collector-emitter breakdown voltage supply current (one circuit coming on) dc amplification factor collector-emitter saturation voltage input current electrical characteristics (unless otherwise noted, ta = C20 ~ +75 c) switching characteristics (unless otherwise noted, ta = 25 c) turn-on time turn-off time c l = 15pf (note 1) ton 50% 50% 50% 50% toff input output pg 50 w c l r l measured device v cc v o input output (1) pulse generator (pg) characteristics : prr = 1khz, tw = 10 m s, tr = 6ns, tf = 6ns, z o = 50 w v p = 3v p-p (2) input-output conditions : r l = 40 w , v o = 10v, v cc = 6.5v (3) electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes
aug. 1999 mitsubishi semiconductor m54537p/fp 7-unit 350ma transistor array typical characteristics duty cycle (%) 0 0 100 200 300 400 20 40 60 80 100 collector current ic (ma) duty-cycle-collector characteristics (m54537fp) thermal derating factor characteristics ambient temperature ta (?) m54537fp m54537p power dissipation pd (w) 0 0 0.5 1.0 1.5 2.0 25 50 75 100 v cc = 3v v i = 3v output saturation voltage collector current characteristics output saturation voltage v ce (sat) (v) ta = ?0? ta = 25? ta = 75? collector current ic (ma) 0 0 100 200 300 400 0.1 0.2 0.3 0.4 0.5 duty-cycle-collector characteristics (m54537p) duty cycle (%) ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ? cc = 6.5v ?a = 25? ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ? cc = 6.5v ?a = 25? 0 0 100 200 300 400 to ? ? ? ? ? a ? ? ? ? ? ? 20 40 60 80 100 collector current ic (ma) ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ? cc = 6.5v ?a = 75? ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ? cc = 6.5v ?a = 75? duty cycle (%) 0 0 100 200 300 400 a ? ? ? ? a ? 20 40 60 80 100 collector current ic (ma) duty-cycle-collector characteristics (m54537p) duty cycle (%) 0 0 100 200 300 400 20 40 60 80 100 collector current ic (ma) duty-cycle-collector characteristics (m54537fp)
aug. 1999 mitsubishi semiconductor m54537p/fp 7-unit 350ma transistor array dc amplification factor collector current characteristics collector current ic (ma) 10 1 10 3 v cc = 6.5v v ce = 4v v cc = 8v ta = 25? ta = 75? ta = ?0? 5 3 2 7 10 4 5 3 2 7 10 3 10 2 23 57 10 2 23 57 dc amplification factor h fe grounded emitter transfer characteristics input voltage v i (v) 0 v cc = 6.5v v ce = 4v ta = 75? ta = ?0? ta = 25? 100 200 300 400 0 0.5 1.0 1.5 2.0 collector current ic (ma) input characteristics input voltage v i (v) 0 ta = 25? ta = 75? ta = ?0? 2 1 3 4 5 0 246810 input current i i (ma) v i = 3.2v supply current characteristics supply voltage v cc (v) 0 ta = 25? ta = 75? ta = ?0? 20 10 30 40 50 0 246810 supply current icc (ma)
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