2002. 10. 23 1/2 semiconductor technical data mjd117/l epitaxial planar pnp transistor revision no : 3 monolithic construction with built in base-emitter shunt resistors industrial use. features high dc current gain. : h fe =1000(min.), v ce =-4v, i c =-1a. low collector-emitter saturation voltage. straight lead (ipak, "l" suffix) complementary to mjd112/l. maximum rating (ta=25 ) dpak dim millimeters a b c d f h i j k l 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 2.70 0.2 2.30 0.1 1.00 max 2.30 0.2 0.5 0.1 2.00 0.20 0.50 0.10 e 0.91 0.10 m 0.90 0.1 o a c d b e k i j q h f f m o p l 123 1. base 2. collector 3. emitter 1.00 0.10 p 0.95 max q + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit collector-emitter sustaining voltage v ceo(sus) i c =-30ma, i b =0 -100 - - v collector cut-off current i ceo v ce =-50v, i b =0 - - -20 a i cbo v cb =-100v, i e =0 - - -20 emitter cut-off current i ebo v eb =-5v, i c =0 - - -2 ma dc current gain h fe v ce =-3v, i c =-0.5a 500 - - v ce =-3v, i c =-2a 1,000 12,000 - collector-emitter saturation voltage v ce(sat) i c =-2a, i b =-8ma - - -2.0 v base-emitter on voltage v be(on) v ce =-3v, i c =-2a - - -2.8 v current gain bandwidth product f t v ce =-10v, i c =0.75a, f=1mhz 25 - - mhz collector output capacitance c ob v cb =-10v, i e =0, f=0.1mhz - - 200 pf characteristic symbol rating unit collector-base voltage v cbo -100 v collector-emitter voltage v ceo -100 v emitter-base voltage v ebo -5 v collector current dc i c -2 a pulse -4 base current dc i b -50 ma collector power dissipation ta=25 p c 1.3 w tc=25 20 junction temperature t j 150 storage temperature range t stg -55 150 c b e r 10k ? 0.6k ? r 1 2 = = dim millimeters ipak d b q e h f f c a p l i j 123 a b c d e f g h i j l p q 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 9.50 0.6 2.30 0.1 0.76 0.1 1.0 max 2.30 0.2 0.5 0.1 0.50 0.1 1.0 0.1 0.90 max g 1. base 2. collector 3. emitter k 2.0 0.2 k + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _
2002. 10. 23 2/2 mjd117/l revision no : 3 saturation voltage ce(sat) collector current i (a) c v , v - i ce(sat) c v , v (v) -0.1 -0.5 -0.3 -0.03 -0.01 -0.1 -1 -3 -0.3 -1 -3 -5 -10 i /i =250 -5 c v be(sat) v ce(sat) b be(sat) be(sat) collector-base voltage v (v) cb cb ob c - v capacitance c (pf) ob 100 dc current gain h 50 fe -0.3 -0.1 -0.03 -0.01 collector current i (ma) c h - i fe c -1 -3 -5 300 500 1k 3k 5k v =-3v ce -0.1 -0.3 -1 -3 -10 -30 -50 10 30 50 100 300 500 p - ta c case temperature ta ( c) 0 c 0 power dissipation p (w) 50 100 150 200 5 10 15 20 25 collector-emitter voltage v (v) safe operating area collector current i (a) -1 -0.01 c ce -3 -10 -30 -100 -200 -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 -10 single nonrepetive pulse tc=25 c curves must be dreated linearly with increase in temperature * i max.(pulsed)* c dc operation 100 s* 500 s* 1ms* 5ms* tc=25 c
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