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200 8 - 02 - 11 rev. 2. 6 page 1 spw52n50c3 coolmos? v ds @ t jmax 560 v r ds(on) 0.07 i d 52 a feature ? new revolutionary high voltage technology ? worldwide best r ds(on) in to-247 ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? ultra low effective capacitances ? improved transconductance p g -to247 type package marking spw52n50c3 p g -to247 52n50c3 maximum ratings parameter symbol value unit continuous drain current t c = 25 c t c = 100 c i d 52 30 a pulsed drain current, t p limited by t jmax i d puls 156 avalanche energy, single pulse i d = 10 a, v dd = 50 v e as 1800 mj avalanche energy, repetitive t ar limited by t jmax 1) i d = 20 a, v dd = 50 v e ar 1 avalanche current, repetitive t ar limited by t jmax i ar 20 a gate source voltage v gs 20 v gate source voltage ac (f >1hz) v gs 30 power dissipation, t c = 25c p tot 417 w operating and storage temperature t j , t stg -55... +150 c reverse diode dv/dt dv/dt 1 5 v/ns 4 ) p lease note the new package dimensions arccording to pcn 2009-134- a
200 8 - 02 - 11 rev. 2. 6 page 2 spw52n50c3 maximum ratings parameter symbol value unit drain source voltage slope v ds = 400 v, i d = 52 a, t j = 125 c d v /d t 50 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 0.3 k/w thermal resistance, junction - ambient, leaded r thja - - 62 soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s t sold - - 260 c electrical characteristics, at t j=25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 500 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =20a - 600 - gate threshold voltage v gs(th) i d =2700 ? , v gs = v ds 2.1 3 3.9 zero gate voltage drain current i dss v ds =500v, v gs =0v, t j =25c, t j =150c - - 0.5 - 25 250 a gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =30a, t j =25c t j =150c - - 0.06 0.16 0.07 - gate input resistance r g f =1mhz, open drain - 0.7 - p lease note the new package dimensions arccording to pcn 2009-134- a
200 8 - 02 - 11 rev. 2. 6 page 3 spw52n50c3 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. transconductance g fs v ds 2* i d * r ds(on)max , i d =30a - 40 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 6800 - pf output capacitance c oss - 2200 - reverse transfer capacitance c rss - 150 - effective output capacitance, 2) energy related c o(er) v gs =0v, v ds =0v to 400v - 212 - pf effective output capacitance, 3) time related c o(tr) - 469 - turn-on delay time t d(on) v dd =380v, v gs =0/10v, i d =52a, r g =1.8 - 20 - ns rise time t r - 30 - turn-off delay time t d(off) - 120 - fall time t f - 10 - gate charge characteristics gate to source charge q gs v dd =380v, i d =52a - 30 - nc gate to drain charge q gd - 160 - gate charge total q g v dd =380v, i d =52a, v gs =0 to 10v - 290 - gate plateau voltage v (plateau) v dd =380v, i d =52a - 5 - v 1 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 2 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 3 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . 4 i sd <=i d , di/dt<= 2 00a/us, v dclink =400v, v peak 200 8 - 02 - 11 rev. 2. 6 page 4 spw52n50c3 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 52 a inverse diode direct current, pulsed i sm - - 156 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =380v, i f = i s , d i f /d t =100a/s - 580 - ns reverse recovery charge q rr - 20 - c peak reverse recovery current i rrm - 70 - a peak rate of fall of reverse recovery current di rr / dt - 900 - a/s typical transient thermal characteristics symbol value unit symbol value unit typ. typ. thermal resistance r th1 0.002689 k/w r th2 0.005407 r th3 0.011 r th4 0.054 r th5 0.071 r th6 0.036 thermal capacitance c th1 0.001081 ws/k c th2 0.004021 c th3 0.005415 c th4 0.014 c th5 0.025 c th6 0.158 external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t) p lease note the new package dimensions arccording to pcn 2009-134- a
200 8 - 02 - 11 rev. 2. 6 page 5 spw52n50c3 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 50 100 150 200 250 300 350 400 w 500 spw52n50c3 p tot 2 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 3 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 3 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s t p -4 10 -3 10 -2 10 -1 10 0 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 4 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 4 8 12 16 20 v 26 v ds 0 40 80 120 160 200 a 280 i d 4.5v 5v 5.5v 6v 6.5v 7v 7.5v 20v p lease note the new package dimensions arccording to pcn 2009-134- a
200 8 - 02 - 11 rev. 2. 6 page 6 spw52n50c3 5 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 4 8 12 16 20 v 26 v ds 0 20 40 60 80 100 120 a 160 i d 4v 4.5v 5v 5.5v 6v 6.5v 20v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 20 40 60 80 100 120 a 160 i d 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.5 r ds(on) 20v 6.5v 6v 5.5v 5v 4.5v 4v 7 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 30 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 0.38 spw52n50c3 r ds(on) typ 98% 8 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 1 2 3 4 5 6 7 8 v 10 v gs 0 40 80 120 160 200 a 280 i d 25c 150c p lease note the new package dimensions arccording to pcn 2009-134- a
200 8 - 02 - 11 rev. 2. 6 page 7 spw52n50c3 9 typ. gate charge v gs = f ( q gate ) parameter: i d = 52 a pulsed 0 40 80 120 160 200 240 280 320 360 nc 420 q gate 0 2 4 6 8 10 12 v 16 spw52n50c3 v gs 0.2 v ds max 0.8 v ds max 10 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd 0 10 1 10 2 10 3 10 a spw52n50c3 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 11 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t ar 0 2 4 6 8 10 12 14 16 a 20 i ar tj (start)=25c tj(start)=125c 12 avalanche energy e as = f ( t j ) par.: i d = 10 a, v dd = 50 v 20 40 60 80 100 120 c 160 t j 0 0.5 1 mj 2 e as p lease note the new package dimensions arccording to pcn 2009-134- a
200 8 - 02 - 11 rev. 2. 6 page 8 spw52n50c3 13 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 450 460 470 480 490 500 510 520 530 540 550 560 570 v 600 spw52n50c3 v (br)dss 14 avalanche power losses p ar = f ( f ) parameter: e ar =1mj 10 4 10 5 10 6 hz f 0 100 200 300 400 500 600 700 800 - 1000 p av 15 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 400 v 600 v ds 1 10 2 10 3 10 4 10 5 10 pf c ciss coss crss 16 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 v 500 v ds 0 2 4 6 8 10 12 14 16 18 20 j 24 e oss
200 8 - 02 - 11 rev. 2. 6 page 9 spw52n50c3 definition of diodes switching characteristics
8 02 11 rev. 2. 6 p djh 63: 5 1& 3 g 72 p lease note the new package dimensions arccording to pcn 2009-134- a
200 8 - 02-11 rev. 2. 6 page 11 spw52n50c3 published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. p lease note the new package dimensions arccording to pcn 2009-134- a
data sheet erratum pcn 2009-134-a new package outlines to-247 final data sheet erra tum rev. 2.0, 2010-02-01 1 new package outlines to-247 assembly capacity extension for coolmostm technology products assembled in lead-free package pg-to247-3 at subcontractor ase (weihai) inc., china (changes are marked in blue . ) figure 1 outlines to-247, dimensions in mm/inches

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