1996. 5. 30 1/3 semiconductor technical data KTC3199 epitaxial planar npn transistor revision no : 1 general purpose application switching application. features high dc current gain : h fe =70~700. excellent h fe linearity : h fe (0.1ma)/h fe (2ma)=0.95(typ.). low noise : nf=1db(typ.), 10db(max.). complementary to kta1267. maximum rating (ta=25 1 ) 1 2 3 to-92m dim millimeters a b c d e f g h j k 1. emitter 2. collector 3. base 3.20 max 4.30 max 0.55 max 2.40 0.15 1.27 2.30 14.00 0.50 0.60 max 1.05 1.45 25 0.55 max l m n f a g j k d ee l n m c h 0.80 o 0.75 o b + _ + _ electrical characteristics (ta=25 1 ) note : h fe classification o:70 140 , y:120 240 , gr:200 400, bl:300~700. characteristic symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 150 ma emitter current i e -150 ma collector power dissipation p c 400 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =50v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 a dc current gain h fe (note) v ce =6v, i c =2ma 70 - 700 collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma - 0.1 0.25 v transition frequency f t v ce =10v, i c =1ma 80 - - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 2.0 3.5 pf noise figure nf v ce =6v, i c =0.1ma, f=1khz, rg=10k u - 1.0 10 db
1996. 5. 30 2/3 KTC3199 revision no : 1 collector current i (ma) 0 c 0 collector-emitter voltage v (v) ce ce c i - v 30 dc current gain h fe 1k 300 100 0.3 0.1 collector current i (ma) c h - i 0.3 collector-emitter saturation 3 ce(sat) 0.01 300 100 30 0.1 collector current i (ma) c v - i 10 base current i ( a) 0.3 b 3k 0 base-emitter voltage v (v) be i - v 40 80 120 160 100 240 1234 567 common emitter ta=25 c 6.0 5.0 3.0 2.0 1.0 0.5 i =0.2ma 0 b fe c 1 3 10 30 50 100 300 500 10 ce(sat) c voltage v (v) 0.3 1 3 10 0.03 0.05 0.1 0.5 1 common emitter i /i =10 cb ta=100 c 25 c -25 c ce v =-10v ta=25 c common emitter 1k 500 100 50 30 -10 -3 -1 -0.3 transition frequency f (mhz) e t f - i e emitter current i (ma) -0.1 -30 -100 -300 10 t 3k 300 bbe 0.2 0.4 0.6 0.8 1.0 1.2 1 3 30 100 300 1k common v =-6v ce emitter ta= 100 c ta= 25 c ta =-25 c common ta=100 c ta=25 c ta=-25 c v =6v ce ce v =1v emitter 0.1 5 3 1 0.5 30 10 3 1 c be(sat) v - i c collector current i (ma) 0.1 0.3 100 300 10 be(sat) base-emitter saturation 0.3 voltage v (v) b c i /i =10 ta=25 c common emitter
1996. 5. 30 3/3 KTC3199 revision no : 1 c p (mw) 0 collector power dissipation 0 ambient temperature ta ( c) pc - ta 25 50 100 125 150 100 200 500 400 300 75
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