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| inchange semiconductor product specification silicon npn power transistors 2n6383 2N6384 2n6385 description ? with to-3 package ? complement to type 2n6648/6649/6650 ? darlington ? high dc current gain applications ? designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit 2n6383 40 2N6384 60 v cbo collector-base voltage 2n6385 open emitter 80 v 2n6383 40 2N6384 60 v ceo collector-emitter voltage 2n6385 open base 80 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a i cm collector current-peak 15 a i b base current 0.25 a p d total power dissipation t c =25 ?? 100 w t j junction temperature 200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.75 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2n6383 2N6384 2n6385 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2n6383 40 2N6384 60 v ceo(sus) collector-emitter sustaining voltage 2n6385 i c =0.2a ;i b =0 80 v v cesat-1 collector-emitter saturation voltage i c =5a; i b =10ma 2.0 v v cesat-2 collector-emitter saturation voltage i c =10a ;i b =100ma 3.0 v v be-1 base-emitter on voltage i c =5a ; v ce =3v 2.8 v v be-2 base-emitter on voltage i c =10a ; v ce =3v 4.5 v 2n6383 v ce =40v; i b =0 2N6384 v ce =60v; i b =0 i ceo collector cut-off current 2n6385 v ce =80v; i b =0 1.0 ma 2n6383 v ce =40v; v be =-1.5v t c =125 ?? 0.3 3.0 2N6384 v ce =60v; v be =-1.5v t c =125 ?? 0.3 3.0 i cex collector cut-off current 2n6385 v ce =80v; v be =-1.5v t c =125 ?? 0.3 3.0 ma i ebo emitter cut-off current v eb =5v; i c =0 10 ma h fe-1 dc current gain i c =5a ; v ce =3v 1000 20000 h fe-2 dc current gain i c =10a ; v ce =3v 100 c ob output capacitance i e =0; v cb =10v;f=1mhz 200 pf inchange semiconductor product specification 3 silicon npn power transistors 2n6383 2N6384 2n6385 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10mm) |
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