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savantic semiconductor product specification silicon pnp power transistors 2SB1315 d escription with to-3pml package low collector saturation voltage applications for use in low frequency power amplifier applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions max unit v cbo collector-base voltage open emitter -120 v v ceo collector-emitter voltage open base -120 v v ebo emitter-base voltage open collector -5 v i c collector current -8 a t a =25 3.5 p c collector dissipation t c =25 65 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pml) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1315 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ;i b =0 -120 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-5a ;i b =-0.5a -1.5 v v besat base-emitter saturation voltage i c =-5a ;i b =-0.5a -2.0 v i cbo collector cut-off current v cb =-120v; i e =0 -50 a i ebo emitter cut-off current v eb =-5v; i c =0 -50 a h fe dc current gain i c =-1a ; v ce =-5v 60 320 f t transition frequency i c =-1a ; v ce =-5v 65 mhz c ob collector output capacitance f=1mhz;v cb =-10v 200 pf
savantic semiconductor product specification 3 silicon pnp power transistors 2SB1315 package outline fig.2 outline dimensions

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