application high speed power switching features ?low on?esistance high speed switching no secondary breakdown suitable for switching regulator, dc ?dc converter 1 2, 4 3 hdpak 1 2 3 4 1 2 3 4 1. gate 2. drain 3. source 4. drain table 1 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss 500 v gate to source voltage v gss ?0 v drain current i d 15 a drain peak current i d(pulse) *60 a body?rain diode reverse drain current i dr 15 a channel dissipation pch** 100 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? * pw 10 ?, duty cycle 1 % ** value at tc = 25 ? 2sk2330 l , 2sk2330 s silicon n channel mos fet
2sk2330 l , 2sk2330 s table 2 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown v (br)dss 500 v i d = 10 ma, v gs = 0 voltage gate to source breakdown v (br)gss ?0 v i g = ?00 ?, v ds = 0 voltage gate to source leak current i gss ?0 ? v gs = ?5 v, v ds = 0 zero gate voltage drain current i dss 250 ? v ds = 400 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.0 3.0 v i d = 1 ma, v ds = 10 v static drain to source on state r ds(on) 0.3 0.4 ? i d = 8 a resistance v gs = 10 v * forward transfer admittance |y fs | 8 13 s i d = 8 a v ds = 10 v * input capacitance ciss 2050 pf v ds = 10 v output capacitance coss 600 pf v gs = 0 reverse transfer capacitance crss 75 pf f = 1 mhz turn?n delay time t d(on) 30 ns i d = 8 a rise time t r 110 ns v gs = 10 v turn?ff delay time t d(off) 150 ns r l = 3.75 ? fall time t f ?0 ns body?rain diode forward v df 1.0 v i f = 15 a, v gs = 0 voltage body?rain diode reverse t rr 500 s i f = 15 a, v gs = 0, recovery time dif / dt = 100 a / ? * pulse test see characteristic curves of 2sk1168.
application high speed power switching features ?low on?esistance high speed switching low drive current 4 v gate drive device can be driven from 5 v source suitable for switching regulator, dc ?dc converter avalanche ratings 1 2 4 3 1 2, 4 3 dpak? 3 2 1 4 1. gate 2. drain 3. source 4. drain table 1 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss ?0 v drain current i d 20 a drain peak current i d(pulse) *80 a body?rain diode reverse drain current i dr 20 a avalanche current i ap *** 20 a avalanche energy e ar *** 34 mj channel dissipation pch** 30 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? * pw 10 ?, duty cycle 1 % ** value at tc = 25 ? *** value at tch = 25 ?, rg 50 ? 2sk2334 l , 2sk2334 s silicon n channel mos fet
table 2 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown v (br)dss 60 v i d = 10 ma, v gs = 0 voltage gate to source breakdown v (br)gss ?0 v i g = ?00 ?, v ds = 0 voltage gate to source leak current i gss ?0 ? v gs = ?6 v, v ds = 0 zero gate voltage drain current i dss 100 ? v ds = 50 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 2.25 v i d = 1 ma, v ds = 10 v static drain to source on state r ds(on) 0.04 0.055 ? i d = 10 a resistance v gs = 10 v * 0.055 0.07 ? i d = 10 a v gs = 4 v * forward transfer admittance |y fs | 9 15 s i d = 10 a v ds = 10 v * input capacitance ciss 980 pf v ds = 10 v output capacitance coss 440 pf v gs = 0 reverse transfer capacitance crss 135 pf f = 1 mhz turn?n delay time t d(on) 14 ns i d = 10 a rise time t r 90 ns v gs = 10 v turn?ff delay time t d(off) 180 ns r l = 3 ? fall time t f 125 ns body?rain diode forward v df 1.0 v i f = 20 a, v gs = 0 voltage body?rain diode reverse t rr 90 ? i f = 20 a, v gs = 0, recovery time dif / dt = 50 a / ? * pulse test 2sk2334 l , 2sk2334 s
40 30 20 10 0 channel dissipation pch (w) 50 100 150 200 case temperature tc (?) power vs. temperature derating drain to source voltage v (v) ds drain current i (a) d maximum safe operation area 200 100 20 50 10 2 5 1 0.2 0.5 1 2 5 10 20 50 100 1 ms pw = 10 ms (1shot) dc operation (tc = 25?) 100 ? 10 ? operation in this area is limited by r ds(on) ta = 25 ? 50 40 30 20 10 0 drain to source voltage v (v) ds drain current i (a) d pulse test 3.5 v 4 v typical output characteristics 5 v 10 v 3 v 246810 6 v 4.5 v 2.5 v v = 2 v gs 20 16 12 8 4 0 gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics 1234 5 v = 10 v pulse test ds tc = 75? 25? ?5? 2sk2334 l , 2sk2334 s
1.0 0.8 0.6 0.4 0.2 0 gate to source voltage v (v) gs drain to source voltage v (v) ds(on) drain to source saturation voltage vs. gate to source voltage 246810 pulse test i = 15 a d 10 a 5 a drain current i (a) d drain to source on state resistance r ( ) ? ds(on) static drain to source on state resistance vs. drain current 1 2 5 10 20 50 100 1 0.2 0.5 0.1 0.02 0.01 0.05 pulse test v = 4 v gs 10 v 0.1 0.08 0.06 0.04 0.02 ?0 0 40 80 120 160 case temperature tc (?) 0 r ( ) ds(on) static drain to source on state resistance ? pulse test static drain to source on state resistance vs. temperature i = 10 a d v = 4 v gs 10 v 2 a, 5 a, 10 a 2 a, 5 a forward transfer admittance |yfs| (s) drain current i (a) d forward transfer admittance vs. drain current 50 20 10 2 5 1 0.5 0.1 0.3 1 3 10 30 100 25 ? tc = ?5 ? 75 ? ds v = 10 v pulse test 2sk2334 l , 2sk2334 s
reverse drain current i (a) dr reverse recovery time trr (ns) body?rain diode reverse recovery time 1000 200 500 100 20 50 10 0.1 0.3 1 3 10 30 100 di/dt = 50 a/? v = 0, ta = 25? gs 01020304050 capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage 10000 3000 1000 300 100 30 10 v = 0 f = 1 mhz gs ciss coss crss 100 80 60 40 20 0 gate charge qg (nc) drain to source voltage v (v) ds 20 16 12 8 4 0 gate to source voltage v (v) gs dynamic input characteristics v = 10 v 25 v 50 v dd v gs ds v i = 20 a d v = 50 v 25 v 10 v dd 20 40 60 80 100 drain current i (a) d switching time t (ns) switching characteristics 1000 200 500 100 20 10 50 0.3 1 3 10 30 v = 10 v, v = 30 v pw = 5 ?, duty < 1 % gs dd t f r t d(on) t d(off) t 2sk2334 l , 2sk2334 s
20 16 12 8 4 0 0.4 0.8 1.2 1.6 2.0 source to drain voltage v (v) sd reverse drain current i (a) dr reverse drain current vs. souece to drain voltage pulse test v = 0, ? v gs 10 v 5 v 40 32 24 16 8 channel temperature tch (?) repetive avalanche energy e (mj) ar maximun avalanche energy vs. channel temperature derating 25 50 75 100 125 150 0 i = 20 a v = 25 v duty < 0.1 % rg > 50 ap dd ? d. u. t rg i monitor ap v monitor ds v dd 50 ? vin ?5 v 0 i d v ds i ap v (br)dss l v dd e = ?l ?i 2 1 v v ?v ar ap dss dss dd 2 avalanche test circuit and waveform 2sk2334 l , 2sk2334 s
3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m pulse width pw (s) normalized transient thermal impedance 100 m 1 10 s (t) dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c ch ?c = 4.17 ?/w, tc = 25 ? d = 1 0.5 0.2 0.01 0.02 0.1 0.05 1 shot pulse tc = 25? normalized transient thermal impedance vs. pulse width vin monitor d.u.t. vin 10 v r l v = 30 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 ? 90% 10% t f switching time test circuit waveform 2sk2334 l , 2sk2334 s
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