? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 900 v v dgr t j = 25 c to 150 c, r gs = 1m 900 v v gss continuous 20 v v gsm transient 30 v p d t c = 25 c40 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-220 3.00 g to-252 0.35 g gate controlled current limiter n-channel enhancement mode IXCY01N90E ixcp01n90e v dss = 900v i d(limit) = 250ma r ds(on) 80 ds98701c(09/09) d s g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 25 a 900 v v gs(th) v ds = v gs , i d = 25 a 2.5 5.0 v i gss v gs = 20v, v ds = 0v 50 na i dss v ds = v dss , v gs = 0v 10 a r ds(on) v gs = 10v, i d = 50ma, note 1 80 m i dp plateau current, v gs = 10v, v ds = 10v 125 175 ma features ? high output resistance in saturated mode of operation ? rugged hdmos tm process ? stable peak drain current limit ? high voltage current regulator ? international standard packages applications ? current regulation ? over current and over voltage protection for sensitive loads ? linear regulator g = gate d = drain s = source tab = drain to-220 (ixcp) g d s to-252 aa (ixcy) g s tab tab
ixys reserves the right to change limits, test conditions, and dimensions. IXCY01N90E ixcp01n90e symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 100ma, note 1 28 40 ms c iss 158 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 22 pf c rss 6.6 pf t d(on) 21 ns t r 27 ns t d(off) 61 ns t f 74 ns q g(on) 6.1 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 50ma 0.9 nc q gd 3.7 nc i a(p) / / / / / t plateau current shift with temperature 50 ppm/k v ds = 10v, v gs = 10v v / / / / / i a(p) dynamic resistance, v ds = 20v, v gs = 10v 125 k v f i f = 50ma, v gs = 0v, note 1 1.3 v r thjc 3.10 c/w r thcs 0.50 c/w r thca to-220 80 c/w to-252 125 c/w note 1. pulse test, t 300 s; duty cycle, d 2%. resistive switching times v gs = 10v, v ds = 50v, i d = 50ma r g = 50 (external) ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 pins: 1 - gate 2 - drain to-220 (ixcp) outline to-252 aa (ixcy) outline dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 1 - gate 2 - drain 3 - source 4 - drain
? 2009 ixys corporation, all rights reserved IXCY01N90E ixcp01n90e fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 90 100 0123456 v ds - volts i d - milliamperes v gs = 10v 7 v 5 v 6 v 8 v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 0 102030405060 v ds - volts i d - milliamperes v gs = 15v 7 v 6 v 5 v 8 v 9 v 10 v 11 v 12 v 13 v 14 v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 70 80 90 100 012345678 v ds - volts i d - milliamperes v gs = 10v 5 v 7v 6v 4 v 8v fig. 5. r ds(on) normalized to i d = 50ma value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 100ma i d = 50ma fig. 6. r ds(on) normalized to i d = 50ma value vs. drain current 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 20 40 60 80 100 120 140 160 i d - milliamperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 4. drain current vs. junction temperature 0 40 80 120 160 200 240 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade i d - milliamperes v gs = 12v 5 v 7v 6v 10 v 8v 9v 11 v v ds = 20v
ixys reserves the right to change limits, test conditions, and dimensions. IXCY01N90E ixcp01n90e ixys ref: c_01n90e(1l)8-12-09 fig. 8. input admittance 0 20 40 60 80 100 120 140 160 2345678910 v gs - volts i d - milliamperes t j = 125oc 25oc - 40oc fig. 7. dynamic output resistance vs. drain current 100 1,000 0 20 40 60 80 100 120 140 160 i d - milliamperes r o - kiloohms 200 400 700 t j = 25oc v ds = 20v fig. 9. transconductance 0 5 10 15 20 25 30 35 0 20 40 60 80 100 120 140 160 i d - miilamperes g f s - millisiemens t j = - 40oc 125oc 25oc fig. 10. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd - volts i s - milliamperes t j = 125oc t j = 25oc fig. 11. gate charge 0 1 2 3 4 5 6 7 8 9 10 0123456 q g - nanocoulombs v gs - volts v ds = 450v i d = 50ma i g = 1ma fig. 12. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss
? 2009 ixys corporation, all rights reserved ixys ref: c_01n90e(1l)8-12-09 IXCY01N90E ixcp01n90e fig. 15. maximum transient thermal impedance 0.01 0.10 1.00 10.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 13. allowable power dissipation for various heat-sinking conditions 0 2 4 6 8 10 12 14 0 25 50 75 100 125 150 t a - degrees centigrade p d - w atts r th ja = 10 k / w 15 k / w 20 k / w 30 k / w 40 k / w 60 k / w 100 k / w note that junction temperature can be derated by increasing ambient temperature (t a ) by the same amount. fig. 14. forward-bias safe operating area 10 100 1,000 10,000 10 100 1,000 v ds - volts i d - milliamperes t j = 150oc t c = 25oc single pulse 1ms 100s r ds(on) limit 10ms 100ms dc
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