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savantic semiconductor product specification silicon pnp power transistors 2SA653 description with to-66 package high voltage: v ceo =-120v(min) applications low frequency power amplifier color tv vertical deflection output applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -150 v v ceo collector-emitter voltage open base -120 v v ebo emitter-base voltage open collector -6 v i c collector current -1.0 a p c collector power dissipation t c =25 15 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-66) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA653 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ;i b =0 -120 v v (br)cbo collector-base breakdown voltage i c =-1ma ;i e =0 -150 v v cesat collector-emitter saturation voltage i c =-0.5a; i b =-50ma -1.5 v v besat base-emitter saturation voltage i c =-0.5a; i b =-50ma -2.0 v i cbo collector cut-off current v cb =-150v; i e =0 -10 a i ebo emitter cut-off current v eb =-5v; i c =0 -10 a h fe dc current gain i c =-0.2a ; v ce =-5v 40 f t transition frequency i c =-0.1a ; v ce =-10v 15 mhz savantic semiconductor product specification 3 silicon pnp power transistors 2SA653 package outline fig.2 outline dimensions |
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