![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
this is information on a product in full production. november 2012 doc id 15420 rev 5 1/21 21 STF13NM60N, sti13nm60n, stp13nm60n, stu13nm60n, stw13nm60n n-channel 600 v, 0.28 typ., 11 a mdmesh? ii power mosfet in to-220fp, i2pak, to-220, ipak, to-247 packages datasheet ? production data features 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description these devices are n-channel power mosfets developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram order codes v dss (@tjmax) r ds(on) max i d STF13NM60N sti13nm60n stp13nm60n stu13nm60n stw13nm60n 650 v < 0.36 11 a to-220 to-220fp 1 2 3 tab 1 2 3 1 2 3 to-247 1 2 3 i2pak 3 2 1 ipak tab ta b 3 # $ o r 4 ! " ' 3 table 1. device summary order codes marking packages packaging STF13NM60N sti13nm60n stp13nm60n stu13nm60n stw13nm60n 13nm60n to-220fp i2pak to-220 ipak to-247 tu b e tu b e tu b e tu b e tu b e www.st.com
contents stf/i/p/u/w13nm60n 2/21 doc id 15420 rev 5 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 stf/i/p/u/w13nm60n electrical ratings doc id 15420 rev 5 3/21 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220fp i2pak, to-220, ipak, to-247 v ds drain-source voltage 600 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 11 (1) 1. limited by maximum junction temperature 11 a i d drain current (continuous) at t c = 100 c 6.93 (1) 6.93 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 44 (1) 44 a p tot total dissipation at t c = 25 c 25 90 w dv/dt (3) 3. i sd 11 a, di/dt 400 a/s, v ds peak v (br)dss , v dd = 80% v (br)dss. peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-220fp i2pak to-220 ipak to-247 r thj-case thermal resistance junction-case max 5 1.39 c/w r thj-amb thermal resistance junction-ambient max 62.5 62.5 100 50 c/w table 4. avalanche characteristics symbol parameter value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 3.5 a e as single pulse avalanche energy (starting t j =25 c, i d =i as , v dd =50 v) 200 mj electrical characteristics stf/i/p/u/w13nm60n 4/21 doc id 15420 rev 5 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 0.1 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 5.5 a 0.28 0.36 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 790 60 3.6 - pf pf pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v ds equivalent output capacitance v gs = 0, v ds = 0 to 480 v - 135 - pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 11 a, v gs = 10 v, (see figure 20) - 27 4 14 - nc nc nc r g gate input resistance f=1 mhz open drain - 4.7 - stf/i/p/u/w13nm60n electrical characteristics doc id 15420 rev 5 5/21 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f tu r n - o n d e l ay t i m e rise time turn-off delay time fall time v dd = 300 v, i d = 5.5 a r g =4.7 v gs = 10 v (see figure 19) - 3 8 30 10 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 11 44 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 11 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 11 a, di/dt = 100 a/s v dd = 100 v (see figure 21) - 230 2 18 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 11 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 21) - 290 190 17 ns c a electrical characteristics stf/i/p/u/w13nm60n 6/21 doc id 15420 rev 5 2.1 electrical characteristics (curves) figure 2. safe operating area for i2pak and to-220 figure 3. thermal impedance for i2pak and to-220 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am0 3 25 8 v1 i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am0 3 259v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am0 3 9 83 v1 stf/i/p/u/w13nm60n electrical characteristics doc id 15420 rev 5 7/21 figure 8. safe operating area for ipak figure 9. thermal impedance for ipak figure 10. output characteristics figure 11. transfer characteristics figure 12. normalized v ds vs temperature figure 13. static drain-source on-resistance ) $ 6 $ 3 6 ! / p e r a t i o n i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n ? s ? s m s m s 4 j ? # 4 c ? # 3 i n g l e p u l s e ! - v ) $ 6 $ 3 6 ! 6 ' 3 6 6 6 6 ! - v ) $ 6 ' 3 6 ! 6 $ 3 6 ! - v v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.02 1.04 1.06 i d =1ma 1.0 8 1.10 am0902 8 v1 r d s (on) 0.26 0.24 0.22 0.2 0 4 i d (a) ( ) 2 6 0.2 8 0. 3 0 v g s =10v 8 10 am0 33 02v1 electrical characteristics stf/i/p/u/w13nm60n 8/21 doc id 15420 rev 5 figure 14. gate charge vs gate-source voltage figure 15. capacitance variations figure 16. normalized gate threshold voltage vs temperature figure 17. normalized on-resistance vs temperature figure 18. source-drain diode forward characteristics v g s 6 4 2 0 0 q g (nc) (v) 20 8 10 10 v dd =4 8 0v i d =11a 3 0 12 3 00 200 100 0 400 500 v d s v d s (v) am0 33 05v1 # 6 $ 3 6 p & |