absolute maximum ratings (ta = 25?) item symbol rating unit collector to base voltage v cbo 150 v collector to emitter voltage v ceo 80 v emitter to base voltage v ebo 6v collector current i c 6a collector peak current i c(peak) 10 a collector power dissipation p c *1 50 w junction temperature tj 150 ? storage temperature tstg ?5 to ? +150 note: 1. value at t c = 25?. 1 2 3 to-3p 1. base 2. collector 3. emitter electrical characteristics (ta = 25?) item symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo 150 v i c = 5 ma, i e = 0 collector to emitter breakdown voltage v (br)ceo 80v i c = 50 ma, r be = emitter to base breakdown voltage v (br)ebo 6 v i e = 5 ma, i c = 0 collector cutoff current i cbo 10 av cb = 120 v, i e = 0 dc current transfer ratio h fe1 *1 60 200 v ce = 5 v, i c = 1a h fe2 22 v ce = 5 v, i c = 5a base to emitter voltage v be 1.0 v v ce = 5 v, i c = 1a collector to emitter saturation voltage v ce (sat) 1.5 v i c = 5 a, i b = 1a note: 1. the 2sd2342 is grouped by h fe1 as follows. bc 60 to 120 100 to 200 2sd2342 silicon npn triple diffused low frequency power amplifier
dc current transfer ratio vs. collector current collector current i c (a) ?w&??w26x?w26x?w26x? ?*@??7 |
