leshan radio com p an y , ltd. maximum r a tings rating symbol v alue unit collector?emitter v oltage v ceo ?350 vd c collector?base v oltage v cbo ?350 vd c emitter?base v oltage v ebo ?5.0 vdc base current i b ?250 m a collector current ? continuous i c ?500 madc thermal characteristics characteristic symbol ma x unit t otal device dissipation fr? 5 board, (1) p d 225 m w t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 55 6 c/w t otal device dissipation p d 300 m w alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 41 7 c/w junction and storage t emperature t j , t stg ?55 to +150 c device marking lmbt6520 l t1g = 2z electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage (i c = ?1.0 ma ) v (br)ceo ?350 ? vdc collector?base breakdown voltage(i e = ?100 a ) v (br)cbo ?350 ? vdc emitter?base breakdown voltage(i e = ?10 a) v (br)ebo ?5.0 ? vdc collector cutoff current( v cb = ?250v ) i cbo ? ?50 na emitter cutoff current( v eb = ?4.0v ) i ebo ? ?50 na 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 1 3 2 lmbt6520 l t1g sot?23 high voltage transistor 2 emitter 3 collector 1 base ordering information device marking shipping lmbt6520lt1g 2 z 3000/tape&reel 10000/tape&reel LMBT6520LT3G 2 z we declare that the material of product compliance with rohs requirements. pnp silicon rev.o 1/6
leshan radio com p an y , ltd. lmbt6520 l t1g electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain h fe ? (i c = ?1.0 madc, v ce = ?10 vdc) 20 ? (i c = ?10madc, v ce = ?10 vdc) 30 ? (i c = ?30 madc, v ce = ?10 vdc) 30 200 (i c = ?50 madc, v ce = ?10 vdc) 20 200 (i c = ?100 madc, v ce = ?10 vdc) 15 ? collector?emitter saturation voltage v ce(sat) vdc (i c = ?10madc, i b = ?1.0madc) ? ?0.30 (i c = ?20 madc, i b = ?2.0 madc) ? ?0.35 (i c = ?30 madc, i b = ?3.0madc) ? ?0.50 (i c = ?50 madc, i b = ?5.0 madc) ? ?1.0 base ? emitter saturation voltage v be(sat) vdc (i c = ?10madc, i b = ?1.0madc,) ? ?0.75 (i c = ?20madc, i b = ?2.0madc,) ? ?0.85 (i c = ?30madc, i b = ?3.0madc,) ? ?0.90 base?emitter on voltage v be(on) ? ?2.0 vdc (i c = ?100madc, v ce = ?10v ) small?signal characteristics current gain?bandwidth product f t 40 200 mhz (v ce = ?20 v, i c = ?10ma, f = 20 mhz) collector ?base capacitance (v cb = ?20 v, f = 1.0 mhz) c cb ? 6.0 pf emitter ?base capacitance c eb ? 100 pf (v eb = ?0.5 v, f = 1.0 mhz) rev.o 2/6
leshan radio com p an y , ltd. t j = 125c i c , collec t or current (ma) figure 1. dc current gain f t , current? gain ? bandwidth product (mhz) v , vo l t age (vo l ts) c, ca p aci t ance (pf) t, time (ns) i c , collec t or current (ma) figure 6. t urn?on t ime i c , collec t or current (ma) figure 2. current?gain ? bandwidth product i c , collec t or current (ma) figure 3. ?on? v oltages i c , collec t or current (ma) figure 4. t emperature coefficients v r , reverse vo l t age (vo l ts) figure 5. capacitance r v , temper a ture coefficients (mv/ c) h fe , dc current gain 25c ?55c t j = 25c v ce = 20 v f = 20 mhz t j = 25c v be(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 5.0 r vc for v ce(sat) r v b for v be 25c to 125c ?55c to 25c ?55c to 125c i c i b = 10 t j = 25c c cb c eb t d @ v be(o f f ) = 2.0 v v ce(o f f ) = 100 v i c /i b = 5.0 t j = 25c t r v ce = 10 v 1.0 2.0 3.0 5.0 7.0 1 0 2 0 3 0 5 0 7 0 10 0 200 100 70 50 30 20 10 100 70 50 30 20 10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 2.5 2.0 1.5 1.0 0.5 0 ?0.5 ?1.0 ?1.5 ?2.0 ?2.5 1.0 2.0 3.0 5.0 7.0 1 0 2 0 3 0 5 0 7 0 10 0 1.0 2.0 3.0 5.0 7.0 1 0 2 0 3 0 5 0 7 0 10 0 1.0 2.0 3.0 5.0 7.0 1 0 2 0 3 0 5 0 7 0 10 0 0.2 0.5 1.0 2.0 5.0 1 0 2 0 5 0 10 0 20 0 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 1.0 2.0 3.0 5.0 7.0 1 0 2 0 3 0 5 0 7 0 10 0 1.0k 700 500 300 200 100 70 50 30 20 10 lmbt6520 l t1g rev.o 3/6
leshan radio com p an y , ltd. i c , collec t or current (ma) figure 7. t urn?on t ime t, time (ns) resis t ance (normalized) figure 8. switching t ime t est circuit t, time (ms) figure 9. thermal response t s t r v ce(o f f ) = 100 v i c /i b = 5.0 i b1 = i b2 t j = 25c +10.8 v ?9.2 v +v cc 50 sampling scope 1/2msd7000 v cc adjusted for v ce(o f f ) = 100 v approxim a te l y ?1.35 v (adjust for v (be)o f f = 2.0 v) pulse width 100 ms t r , t f < 5.0 ns duty cycle < 1.0% for pnp test circuit, reverse all vo l t age polarities d = 0.5 single pulse z qjc(t) = r(t) r qjc t j(pk) ? t c = p (pk) z qjc(t) z qja(t) = r(t) r qja t j(pk) ? t a = p (pk) z qja(t) 0.05 single pulse 0.1 0.2 0.5 1.0 2.0 5.0 1 0 2 0 5 0 10 0 20 0 50 0 1.0 2.0 5.0 1 0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 1.0 2.0 3.0 5.0 7.0 1 0 2 0 3 0 5 0 7 0 10 0 10k 7.0k 5.0k 3.0k 2.0k 1.0k 700 500 300 200 100 50 2.2 k 20 k 1.0 k ~ ~ 0.1 lmbt6520 l t1g rev.o 4/6
leshan radio com p an y , ltd. figure a design note: use of t ransient thermal resistance data t p p p p p t 1 1/f duty cycle =t 1 f = t 1 t p peak pulse power = p p lmbt6520 l t1g rev.o 5/6
d j k l a c b s h g v 1 2 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 leshan radio company, ltd. n o t es : 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. i nch es m i ll i m e t e r s d i m m i n m a x m i n m a x a 0 . 1102 0 . 1197 2 . 80 3 . 04 b 0 . 0472 0 . 0551 1 . 20 1 . 40 c 0 . 0350 0 . 0440 0 . 89 1 . 11 d 0 . 0150 0 . 0200 0 . 37 0 . 50 g 0 . 0701 0 . 0807 1 . 78 2 . 04 h 0 . 0005 0 . 0040 0 . 013 0 . 100 j 0 . 0034 0 . 0070 0 . 085 0 . 177 k 0 . 0 1 4 0 0 . 0 2 85 0 . 35 0 . 6 9 l 0 . 0 350 0 . 0 401 0 . 89 1 . 02 s 0 . 0 830 0 . 1 039 2 . 10 2 . 64 v 0 . 0177 0 . 0236 0 . 45 0 . 60 p i n 1 . base 2 . e m i tt e r 3 . c o ll e c t o r 0.03 1 0. 8 sot-23 3 lmbt6520 l t1g rev.o 6/6
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