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| inchange semiconductor isc product specification isc silicon npn darlington power transistor MJE801T description collector?emitter breakdown voltage : v (br)ceo = 60 v dc current gain : h fe = 750(min) @ i c = 2a complement to type mje701t applications designed for general-purpose amplifier and low-speed switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 5 v i c collector current-continuous 4 a i b b base current 0.1 a p c collector power dissipation t c =25 50 w t i junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 2.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor MJE801T electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma; i b = 0 60 v v ce (sat)-1 collector-emitter saturation voltage i c =2a; i b =40ma 2.8 v v ce (sat)-2 collector-emitter saturation voltage i c = 4a; i b =40ma b 3.0 v v be (on)-1 base-emitter on voltage i c =2a ; v ce =3v 2.5 v v be (on)-2 base-emitter on voltage i c = 4a ; v ce = 3v 3.0 v i ceo collector cutoff current v ce = 60v ; i b = 0 0.1 ma i cbo collector cutoff current v cb = 60v ; i e = 0 v cb = 60v ; i e = 0;t c = 100 0.1 0.5 ma i ebo emitter cutoff current v eb = 5v; i c = 0 2.0 ma h fe-1 dc current gain i c =2a ; v ce = 3v 750 h fe-2 dc current gain i c = 4a ; v ce = 3v 100 isc website www.iscsemi.cn |
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