advanced power dual n-channel enhancement electronics corp. mode power mosfet lower gate charge bv dss 100v simple drive requirement r ds(on) 250m fast switching characteristic i d 1.9a halogen free & rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice AP5322GM-HF rating halogen-free product 1.5 8 1.9 storage temperature range continuous drain current 3 , v gs @ 10v continuous drain current 3 , v gs @ 10v pulsed drain current 1 2 -55 to 150 operating junction temperature range -55 to 150 total power dissipation 1 parameter thermal data 201201101 100 + 20 parameter drain-source voltage gate-source voltage s1 g1 s2 g2 d1 d1 d2 d2 so-8 g2 d2 s2 g1 d1 s1 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =1.9a - 190 250 m ? v gs =4.5v, i d =1a - 300 500 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 1.6 3 v g fs forward transconductance v ds =10v, i d =1.9a - 2.4 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =1.9a - 3.1 5 nc q gs gate-source charge v ds =50v - 1 - nc q gd gate-drain ("miller") charge v gs =10v - 1.8 - nc t d(on) turn-on delay time v ds =50v - 5 - ns t r rise time i d =1a - 7 - ns t d(off) turn-off delay time r g =3.3 -12- ns t f fall time v gs =10v - 3 - ns c iss input capacitance v gs =0v - 200 320 pf c oss output capacitance v ds =15v - 32 - pf c rss reverse transfer capacitance f=1.0mhz - 25 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.5a, v gs =0v - - 1.3 v t rr reverse recovery time i s =1.9a, v gs =0v - 30 - ns q rr reverse recovery charge di/dt=100a/s - 40 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. AP5322GM-HF 2 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 135 /w when mounted on min. copper pad.
a p5322gm-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 2 4 6 8 10 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0 1 2 3 4 5 6 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 180 220 260 300 340 380 420 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =1a t a =25 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 1.9 a v g =10v 0 0.4 0.8 1.2 1.6 2 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) i d =250ua
AP5322GM-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. maximum continuous drain current fig 12. gate charge waveform v.s. ambient temperature 4 q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 012345 q g , total gate charge (nc) v gs , gate to source voltage (v) i d = 1.9 a v ds =50v 0 100 200 300 400 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 135 /w t t 0.02 operation in this area limited by r ds(on) 0 0.4 0.8 1.2 1.6 2 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a)
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