af9926n n-channel enha ncement mode power mosfet this datasheet contains new product information. anachip corp. re serves the rights to modify the product specification without notice. no liability is assumed as a result of the use of this product. no rights under any patent accompany the sale of the product. rev. 1.1 sep 5, 2005 1/6 ? features - capable of 2.5v gate drive - low on-resistance - low drive current - surface mount package ? product summary bv dss (v) r ds(on) (m ? ) i d (a) 20 30 6 ? pin assignments so-8 5 6 7 8 4 3 2 1 d1 d1 d2 d2 s1 g1 s2 g2 ? general description the advanced power mosfet provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ? pin descriptions pin name description s1/2 source g1/2 gate d1/2 drain ? ordering information a x 9926n x x x pn package feature f :mosfet s: so-8 lead free blank : normal l : lead free package packing blank : tube or bulk a : tape & reel
af9926n n-channel enha ncement mode power mosfet anachip corp. www.anachip.com.tw rev. 1.1 s ep 5, 2005 2/6 ? absolute maxi mum ratings symbol parameter rating units v ds drain-source voltage 20 v v gs gate-source voltage 12 v t a =25oc 6 i d continuous drain current (note 1) t a =70oc 4.8 a i dm pulsed drain current (note 2) 26 a total power dissipation 2 w p d linear derating factor t a =25oc 0.016 w/oc t stg storage temperature range -55 to 150 oc t j operating junction temperature range -55 to 150 oc ? thermal data symbol parameter maximum units rthj-amb thermal resistance junction-ambient (note 1) max. 62.5 oc/w ? electrical characteristics at t j =25oc unless otherwise specified symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v ? bv dss / ? t j breakdown voltage temperature coefficient reference to 25 o c, i d =1ma - 0.03 - v/ o c v gs =4.5v, i d =6a - - 30 r ds(on) static drain-source on-resistance (note 3) v gs =2.5v, i d =5.2a 45 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua - - 1.2 v g fs forward transconductance v ds =10v, i d =6a - 20 - s drain-source leakage current (t j =25 o c) v ds =20v, v gs =0v - - 25 i dss drain-source leakage current (t j =70 o c) v ds =20v, v gs =0v - - 250 ua gate-source forward leakage v gs =12v - - 100 i gss gate-source reverse leakage v gs =-12v - - -100 na q g total gate charge (note 3) - 23 35 q gs gate-source charge - 4.5 7 q gd gate-drain (?miller?) charge i d =6a, v ds =20v, v gs =5v - 7 11 nc t d(on) turn-on delay time (note 3) - 30 60 t r rise time - 70 140 t d(off) turn-off delay time - 40 80 t f fall-time v ds =10v, i d =1a, r g =6 ? , v gs =5v r d =10 ? - 65 130 ns c iss input capacitance - 1035 - c oss output capacitance - 320 - c rss reverse transfer capacitance v gs =0v, v ds =20v, f=1.0mhz - 150 - pf ? source-drain diode symbol parameter test conditions min. typ. max. unit i s continuous source current (body diode) v d =v g =0v, v s =1.3v - - 1.54 v v sd forward on voltage (note 3) t j =25oc, i s =1.7a, v gs =0v - 0.78 1.2 v note 1: surface mounted on 1 in 2 copper pad of fr4 board, 135 o c/w when mounted on min. copper pad. note 2: pulse width limited by max. junction temperature. note 3: pulse width 300us, duty cycle 2%.
af9926n n-channel enha ncement mode power mosfet anachip corp. www.anachip.com.tw rev. 1.1 s ep 5, 2005 3/6 ? typical performance characteristics fig 1. typical output characteristics fig 2. typical output characteristics fig 3. r dson v.s. junction temperature fig 4. normalized on-resistance v.s. junction temperature fig 5. maximum drain current v.s. case temperature fig 6. typical power dissipation
af9926n n-channel enha ncement mode power mosfet anachip corp. www.anachip.com.tw rev. 1.1 s ep 5, 2005 4/6 ? typical performance charact eristics (c ontinued) fig 7. maximum safe operating area fig 8. effective transient thermal impedance fig 9. typical gate charge v.s. v gs fig 10. typical capacitance v.s. v ds fig 11. forward characteristic of reverse diode fig 12. gate threshold voltage v.s. junction temperature
af9926n n-channel enha ncement mode power mosfet anachip corp. www.anachip.com.tw rev. 1.1 s ep 5, 2005 5/6 ? typical performance charact eristics (c ontinued) fig 13. switching time circuit fig 14. switching time waveform fig 15. gate charge circuit fig 16. gate charge waveform
af9926n n-channel enha ncement mode power mosfet anachip corp. www.anachip.com.tw rev. 1.1 s ep 5, 2005 6/6 ? marking information so-8 ( top view ) 1 8 9 9 2 6 n aa y w x year code: part number lot code: week code: factory code "a~z": 01~26; "a~z": 27~52 "4" =2004 ~ "a~z": 01~26; "a~z": 27~52 "x": non-lead free; "x": lead free logo ? package information package type: so-8 l c detail a e e1 a a1 d 8 765 1 234 e b detail a 1. all dimensions are in millimeters. 2. dimension does not include mold protrusions. dimensions in millimeters symbol min. nom. max. a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e 5.80 6.15 6.50 e1 3.80 3.90 4.00 l 0.38 0.71 1.27 0 o 4 o 8 o e 1.27 typ.
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