advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 500v simple drive requirement r ds(on) 0.43 fast switching characteristic i d 16a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j symbol value units rthj-c thermal resistance junction-case max. 0.6 /w rthj-a thermal resistance junction-ambient max. 40 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 208 -55 to 150 operating junction temperature range -55 to 150 159 16 continuous drain current, v gs @ 10v 11 pulsed drain current 1 64 gate-source voltage 30 continuous drain current, v gs @ 10v 16 parameter rating drain-source voltage 500 200704071-1/4 AP4085W rohs-compliant product g d s the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s to-3p
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 500 - - v r ds(on) static drain-source on-resistance 3 v gs =10v, i d =8a - - 0.43 , source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =16a, v gs =0v - - 1.3 v t rr reverse recovery time i s =16a, v gs =0v - 630 - ns q rr reverse recovery charge di/dt=100a/s - 13 - uc notes: 1.pulse width limited by max junction temperature. 2.starting t j =25 o c , v dd =99v , l=1mh , r g =25 2/4 AP4085W this product is electrostatic sensitive, please handle with caution. this product has been qualified for use in consumer applications. applications or use in life support or other similar mission-critical devices or systems are not authorized.
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 AP4085W 0 4 8 12 16 0.0 4.0 8.0 12.0 16.0 20.0 24.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 9.0 v 8.0 v 7.0v v g = 6.0v 0 10 20 30 0.0 4.0 8.0 12.0 16.0 20.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10 v 9.0 v 8.0 v 7.0v v g =6.0v 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =8a v g =10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) (v) 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 AP4085W 0 0 1 10 100 0.1 1 10 100 1000 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 12 0 102030405060 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =16a v ds =200v 10 100 1000 10000 1 5 9 13 17 21 25 29 33 37 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 10v q gs q gd q g charge t d(on) t r t d(off) t f v ds v gs 10% 90%
package outline : to-3p millimeters min nom max a 4.50 4.80 5.10 b 0.90 1.00 1.30 b1 1.80 2.50 3.20 b2 1.30 -- 2.30 c 0.40 0.60 0.90 c1 1.40 -- 2.20 d 19.70 20.00 20.30 d1 14.70 15.00 15.30 e 15.30 -- 16.10 b2 e 4.45 5.45 6.45 l 17.50 -- 20.50 3.00 3.20 3.40 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-3p symbol s advanced power electronics corp. package part number 4085w ywwsss logo c1 e b b1 c l d1 a d e date code (ywwsss) y last digit of the year ww week sss sequence
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