advanced power n and p-channel enhancement electronics corp. mode power mosfet simple drive requirement n-ch bv dss 20v good thermal performance r ds(on) 21m ? fast switching performance i d 8.9a rohs compliant & halogen-free p-ch bv dss -20v r ds(on) 60m ? description i d -5.3a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage -20 v v gs gate-source voltage + 12 v i d @t a =25 continuous drain current 3 -5.3 a i d @t a =70 continuous drain current 3 -4.3 a i dm pulsed drain current 1 -20 a p d @t a =25 total power dissipation w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 thermal data symbol value unit rthj-c maximum thermal resistance, junction-case 10 /w rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice 201206071 parameter 1 AP4500GYT-HF halogen-free product 2.5 20 + 12 8.9 7.1 20 a p4500 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of powe r applications. the pmpak ? 3x3 is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. d1/d2 s1 g1 s2 g2 pmpak ? 3x3 g2 d2 s2 g1 d1 s1
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =8a - 16.6 21 m ? v gs =2.5v, i d =4a - 25.4 36 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 0.75 1.5 v g fs forward transconductance v ds =10v, i d =4a - 18 - s i dss drain-source leakage current v ds =16v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 12v, v ds =0v - - + 100 na q g total gate charge i d =4a - 8 12.8 nc q gs gate-source charge v ds =16v - 1.1 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4 - nc t d(on) turn-on delay time v ds =10v - 11 - ns t r rise time i d =1a - 10 - ns t d(off) turn-off delay time r g =3.3 ? -16- ns t f fall time v gs =5v - 6 - ns c iss input capacitance v gs =0v - 450 720 pf c oss output capacitance v ds =10v - 140 - pf c rss reverse transfer capacitance f=1.0mhz - 130 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2.1a, v gs =0v - - 1.2 v t rr reverse recovery time i s =6a, v gs =0v - 21 - ns q rr reverse recovery charge di/dt=100a/s - 14 - nc 2 AP4500GYT-HF
AP4500GYT-HF p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v r ds(on) static drain-source on-resistance 2 v gs =-4.5v, i d =-5a - 45.8 60 m ? v gs =-2.5v, i d =-3a - 62.6 90 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.5 -0.73 -1.5 v g fs forward transconductance v ds =-10v, i d =-3a - 12 - s i dss drain-source leakage current v ds =-16v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 12v, v ds =0v - - + 100 na q g total gate charge i d =-3a - 9 14.4 nc q gs gate-source charge v ds =-16v - 1.3 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 3 - nc t d(on) turn-on delay time v ds =-10v - 8 - ns t r rise time i d =-1a - 15 - ns t d(off) turn-off delay time r g =3.3 ? -26- ns t f fall time v gs =-5v - 21 - ns c iss input capacitance v gs =0v - 710 1140 pf c oss output capacitance v ds =-10v - 125 - pf c rss reverse transfer capacitance f=1.0mhz - 110 - pf source-drain diode symbol parameter test conditions min. typ. max. unit v sd forward on voltage 2 i s =-2.1a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-3a, v gs =0v - 19 - ns q rr reverse recovery charge di/dt=-100a/s - 10 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec, 90 o c/w at steady state.
AP4500GYT-HF n-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 4 0 4 8 12 16 20 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 5.0v 4.5v 3.5v 2.5v v g = 2.0v 0 4 8 12 16 20 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =8a v g =4.5v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 10 20 30 40 12345 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =4a t a =25 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 5.0v 4.5v 3.5v 2.5v v g = 2.0v i d =250ua
a p4500gyt-hf n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. ambient temperature 5 0 1 2 3 4 5 0369 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =4a v ds =16v 0 100 200 300 400 500 600 1 5 9 13 17 21 25 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.02 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 90 /w t t 0.01 operation in this area limited by r ds(on) 0 10 20 30 01234 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o ct j =25 o c v ds =5v 0 2 4 6 8 10 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a) t j = -40 o c
AP4500GYT-HF p-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 6 0 4 8 12 16 20 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-5a v g = -4.5 v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0 4 8 12 16 20 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -5.0v -4.5v -3.5v -2.5v v g = -2.0v 40 50 60 70 80 90 12345 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-3a t a =25 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) -5.0v -4.5v -3.5v -2.5v v g =-2.0v i d =-250ua
a p4500gyt-hf p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. ambient temperature 7 0 1 2 3 4 5 0246810 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -3a v ds = -16v 0 200 400 600 800 1000 1 5 9 13 17 21 25 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.02 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 90 /w t t 0.01 operation in this area limited by r ds(on) 0 10 20 30 012345 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds =-5v 0 1 2 3 4 5 6 25 50 75 100 125 150 t a , ambient temperature ( o c ) -i d , drain current (a) t j = -40 o c
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