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| 2. 30? 0. 05 1. 25? 0. 05 1 . 3 0 ? 0 . 0 3 0 . 3 0 2 . 0 0 ? 0 . 0 5 1 . 0 1 r e f DAP202U switching diode features: power dissipation p d : 200 mw (tamb=25 ) collector current i f : 100 ma collector-base voltage v r : 80 v operating and storage junction temperature range t j , t stg : -55 to +150 circuit: 1 3 2 marking: p electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 100 a 80 v reverse voltage leakage current i r v r =70v 0.1 a forward voltage v f i f =100ma 1.2 v diode capacitance c d v r =6v, f=1mhz 3.5 pf reverse recovery time t rr v r =6v, i f =5ma 4 ns unit mm sot-323 200mw DAP202U switching diode
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