symbol v ds v gs i dm t j , t stg symbol typ max 26 40 50 75 r q jl 14 24 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w maximum junction-to-ambient a steady-state c/w 25 gate-source voltage drain-source voltage -38 continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted vv -11 -50 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 3.1 2 -55 to 150 t a =70c i d -14 ao4425 38v p-channel mosfet product summary v ds (v) = -38v i d = -14a (v gs = -20v) r ds(on) < 10m w (v gs = -20v) r ds(on) < 11m w (v gs = -10v) esd rating: 4000v hbm 100% uis tested 100% rg tested general description the ao4425 uses advanced trench technology to provide excellent r ds(on) , and ultra-low low gate charge with a 25v gate rating. this device is suita ble for use as a load switch or in pwm applications. it is esd protected. s g d soic-8 top view bottom view d d d d s s s g alpha & omega semiconductor, ltd. www.aosmd.com
ao4425 symbol min typ max units bv dss -38 v -100 t j =55c -500 1 m a 10 m a v gs(th) -2 -2.5 -3.5 v i d(on) -50 a 7.7 10 t j =125c 11 13.5 8.8 11 m w g fs 43 s v sd 0.71 1 v i s 4.2 a c iss 3800 pf c oss 560 pf c rss 350 pf r g 7.5 w q g 63 nc q gs 14.1 nc q gd 16.1 nc t d(on) 12.4 ns t r 9.2 ns t d(off) 97.5 ns t f 45.5 ns t rr 35 ns q rr 33 nc -15 -12.8 this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. v ds =0v, v gs =25v body diode reverse recovery time v gs =0v, v ds =-20v, f=1mhz switching parameters total gate charge v gs =-10v, v ds =-20v, i d =-14a gate source charge gate drain charge r ds(on) static drain-source on-resistance body diode reverse recovery charge i f =-14a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-20v, i d =-14a reverse transfer capacitance i f =-14a, di/dt=100a/ m s forward transconductance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss na gate threshold voltage v ds =v gs i d =-250 m a v ds =-30v, v gs =0v zero gate voltage drain current i gss gate-body leakage current v ds =0v, v gs =20v diode forward voltage m w v gs =-10v, i d =-14a i s =-1a,v gs =0v v ds =-5v, i d =-14a turn-on rise time turn-off delaytime v gs =-10v, v ds =-20v, r l =1.35 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the u ser's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12, 14 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev 3 : nov. 2010 alpha & omega semiconductor, ltd. www.aosmd.com
ao4425 typical electrical and thermal characteristics -15 -12.8 0 5 10 15 20 25 30 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-3v -20v -3.5v -4.5v -5v -10v -4v 0 5 10 15 20 25 30 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 25c 125c v ds =-5v 6 7 8 9 10 0 5 10 15 20 25 30 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-20v i d = -14a v gs =-10v i d = -14a 5 10 15 20 4 8 12 16 20 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) i d =-14a 25c 125c v gs =-10v v gs =-20v alpha & omega semiconductor, ltd. www.aosmd.com
ao4425 typical electrical and thermal characteristics -15 -12.8 0 2 4 6 8 10 0 10 20 30 40 50 60 70 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) v ds =-15v i d =-14a 0 1000 2000 3000 4000 5000 0 10 20 30 40 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q qq q ja normalized transient thermal resistance 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c 10 m s single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =40c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c t on t p d alpha & omega semiconductor, ltd. www.aosmd.com
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