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| savantic semiconductor product specification silicon npn power transistors 2SC4881 d escription with to-220f package low saturation voltage high speed switching time applications high current switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 50 v v ebo emitter-base voltage open collector 5 v i c collector current 5 a i cm collector current-peak 8 a i b base current 1 a t a =25 2.0 p c collector power dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC4881 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 50 v v cesat collector-emitter saturation voltage i c =2.5a; i b =0.125a 0.4 v v besat base-emitter saturation voltage i c =2.5a; i b =0.125a 1.3 v i cbo collector cut-off current v cb =50v; i e =0 1 a i ebo emitter cut-off current v eb =6v; i c =0 1 a h fe-1 dc current gain i c =1a ; v ce =1v 100 320 h fe-2 dc current gain i c =2.5a ; v ce =1v 60 f t transition frequency i c =1a ; v ce =4v 100 mhz c ob collector output capacitance i e =0; f=1mhz;v cb =10v 45 pf switching times t on turn-on time 0.1 s t s storage time 0.8 s t f fall time i c =2.5a i b1 =-i b2 =0.125a v cc =30v ,r l =12 @ duty cycle a 1% 0.1 s savantic semiconductor product specification 3 silicon npn power transistors 2SC4881 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) savantic semiconductor product specification 4 silicon npn power transistors 2SC4881 |
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