advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v so-8 compatible with heatsink r ds(on) 3.3m low on-resistance i d 105a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t a =25 a i d @t a =70 a i dm a p d @t c =25 w p d @t a =25 w e as single pulse avalanche energy 4 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 2.2 /w rthj-a maximum thermal resistance, junction-ambient 3 25 /w data & specifications subject to change without notice 200810171 total power dissipation 56.8 1 storage temperature range operating junction temperature range -55 to 150 -55 to 150 total power dissipation 28.8 thermal data parameter gate-source voltage + 20 continuous drain current 3 31 continuous drain current (chip) continuous drain current 3 25 pulsed drain current 1 250 parameter rating drain-source voltage 30 a p3r303gmt-hf 5 halogen-free product 105 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s the pmpak 5x6 package is special for dc-dc converters application and the foot print is compatible with so-8 with backside heat sink and lower profile. s s s g pmpak 5x6 d d d d
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =30a - - 3.3 m ? ? , ?
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 AP3R303GMT-HF 0 40 80 120 160 0.0 2.0 4.0 6.0 8.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 50 100 150 200 250 0.0 1.0 2.0 3.0 4.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0 v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =30a v g =10v 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 2 2.8 3.6 4.4 5.2 246810 v gs , gate-to-source voltage (v) r ds(on) (m
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP3R303GMT-HF 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = pdm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 0 4 8 12 16 20 24 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =30a v ds =15v v ds =18v v ds =24v 0 400 800 1200 1600 2000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge t d(on) t r t d(off) t f v ds v gs 10% 90%
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