DCR1674SA 1/8 www.dynexsemi.com replaces issue august 2002 version, fds5647-1.0 fds5647-2.1 january 2004 features double side cooling high surge capability high mean current fatigue free applications high power drives high voltage power supplies dc motor control voltage ratings ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: DCR1674SA42 note: please use the complete part number when ordering and quote this number in any future correspondance relating to your order. key parameters v drm 4200v i t(av) 3940a i tsm 67000a dvdt* 1000v/ s di/dt 200a/ s *higher dv/dt selections available DCR1674SA phase control thyristor DCR1674SA42 DCR1674SA41 DCR1674SA40 DCR1674SA39 DCR1674SA38 conditions t vj = 0? to 125?c, i drm = i rrm = 500ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades available. type number repetitive peak voltages v drm v rrm v 4200 4100 4000 3900 3800 fig. 1 package outline outline type code: a. see package details for further information.
DCR1674SA 2/8 www.dynexsemi.com current ratings t case = 80?c unless stated otherwise. symbol parameter conditions double side cooled i t(av) mean on-state current i t(rms) rms value i t continuous (direct) on-state current single side cooled (anode side) i t(av) mean on-state current i t(rms) rms value i t continuous (direct) on-state current units max. half wave resistive load 3110 a - 4880 a - 4430 a half wave resistive load 2010 a - 3150 a - 2630 a current ratings t case = 60?c unless stated otherwise. symbol parameter conditions double side cooled i t(av) mean on-state current i t(rms) rms value i t continuous (direct) on-state current single side cooled (anode side) i t(av) mean on-state current i t(rms) rms value i t continuous (direct) on-state current units max. half wave resistive load 3940 a - 6190 a - 5740 a half wave resistive load 2590 a - 4070 a - 3490 a
DCR1674SA 3/8 www.dynexsemi.com surge ratings conditions 10ms half sine; t case = 125 o c v r = 50% v rrm - 1/4 sine 10ms half sine; t case = 125 o c v r = 0 max. units symbol parameter i tsm surge (non-repetitive) on-state current i 2 ti 2 t for fusing i tsm surge (non-repetitive) on-state current i 2 t i 2 t for fusing 22.4 x 10 6 a 2 s 67.0 ka 14.0 x 10 6 a 2 s 53.0 ka thermal and mechanical data dc conditions min. max. units o c/w - 0.013 anode dc clamping force 83.0kn with mounting compound thermal resistance - case to heatsink r th(c-h) 0.001 double side - 125 o c t vj virtual junction temperature t stg storage temperature range reverse (blocking) single side - thermal resistance - junction to case r th(j-c) single side cooled symbol parameter clamping force 74.0 91.0 kn ?5 125 o c - on-state (conducting) - 135 o c - 0.002 o c/w o c/w cathode dc - 0.013 o c/w double side cooled - 0.0065 o c/w
DCR1674SA 4/8 www.dynexsemi.com dynamic characteristics parameter symbol conditions typ. max. units gate trigger characteristics and ratings v drm = 5v, t case = 25 o c conditions parameter symbol v gt gate trigger voltage v drm = 5v, t case = 25 o c i gt gate trigger current v gd gate non-trigger voltage at v drm t case = 125 o c v fgm peak forward gate voltage anode positive with respect to cathode v fgn peak forward gate voltage anode negative with respect to cathode v rgm peak reverse gate voltage i fgm peak forward gate current anode positive with respect to cathode p gm peak gate power see table, gate characteristics curve p g(av) mean gate power 3.5 v 500 ma 0.25 v 30 v 0.25 v 5v 30 a 150 w 10 w max. units i rrm /i drm peak reverse and off-state current at v rrm /v drm , t case = 125 o c from 67% v drm to 5000a gate source 2a t r = 0.5 s, t j = 125 o c dv/dt maximum linear rate of rise of off-state voltage to 67% v drm t j = 125 o c, gate open circuit. - 500 ma - 1000 v/ s repetitive 50hz - 200 a/ s non-repetitive - 400 a/ s rate of rise of on-state current di/dt v t(to) threshold voltage at t vj = 125 o c r t on-state slope resistance at t vj = 125 o c t gd delay time 0.95 -v - 0.138 m ? -2.5 s v d = 67% v drm , gate source 20v, 10 ? t r = 0.5 s, t j = 25 o c i t = 5000a, t p = 3ms, t j = 125?c, v r = 200v, di rr /dt = -5a/ s, v dr = 67% v drm , dv dr /dt = 20v/ s linear s 900 - turn-off time t q i l latching current t j = 25 o c, v d = 5v i h holding current t j = 25 o c, r g-k = - 650 ma - 220 ma
DCR1674SA 5/8 www.dynexsemi.com curves fig.2 maximum (limit) on-state characteristics fig.3 dissipation curves v tm equation:- v tm = a + bln (i t ) + c.i t +d. i t where a = 0.6844942 b = ?.0108645 c = 7.203702 x 10 ? d = 0.01015201 these values are valid for t j = 125?c for i t 500a to 10000a 0.5 1.0 1.5 2.0 2.5 instantaneous on-state voltage, v t - (v) 0 2000 4000 6000 8000 10000 instantaneous on-state current, i t - (a) measured under pulse conditions t j = 125 ? c 0 2000 4000 6000 8000 mean on-state current, i t(av) - (a) 0 2000 4000 6000 8000 10000 mean power dissipation - (w) 1. 2. 3. 4. 1. 6 phase 2. 3 phase 3. halfwave 4. d.c.
DCR1674SA 6/8 www.dynexsemi.com fig.6 transient thermal impedance - junction to case fig.4 recovered charge fig.5 gate characteristics fig.7 surge (non-repetitive) on-state current vs time (with 50% v rrm at t case = 125?c) 100 10 1 0.1 0.001 0.1 0.01 1.0 10 v fgm lower lim it 1% upp er limit 99% t j = 25 ? c v gd gate trigger voltage, v gt - (v) gate trigger current, i gt - (a) 100w 50w 20w 10w i gd i fgm table gives pulse power p gm in watts pulse width s 100 200 500 1ms 10ms 50 150 150 150 150 20 100 150 150 150 100 - 400 150 125 100 25 - frequency hz 10 1 0.1 0.01 0.001 time - (s) 0.1 0.01 0.001 0.0001 thermal impedance - ( ? c/w) double side cooled anode side cooled 100 conduction d.c. halfwave 3 phase 120 ? 6 phase 60 ? effective thermal resistance junction to case ? c/w double side 0.0065 0.0072 0.0073 0.0076 anode side 0.0130 0.0137 0.0138 0.0141 10000 1000 100 recovered charge, q r - (c) 1 10 100 rate of decay of on-state current, di/dt - (a/s) i t = 3000a t j = 125 ? c 110 5 10 1 50 cycles at 50hz ms duration 0 50 100 150 peak half sinewave on-state current - (ka) 200 i 2 t 0 5 10 15 ivt value for fusing - (a 2 s x 10 6 ) 20
DCR1674SA 7/8 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. 100 nom cathode gate anode 35.0 0.5 100 nom 148 nom 138.5 nominal weight: 2575g clamping force: 83kn 10% lead length: 420mm lead terminal connector: m4 ring package outline type code: a 1.5 2 holes 3.6 x 2.0 deep (in both electrodes) cathode tab fig.8 package details
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 sales offices benelux, italy & switzerland: tel: +33 (0)1 64 66 42 17. fax: +33 (0)1 64 66 42 19. france: tel: +33 (0)2 47 55 75 5 3 . fax: +33 (0)2 47 55 75 59. germany, northern europe, spain & rest of world: tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 north america: tel: (440) 259-2060. fax: (440) 259-2059. tel: (949) 733-3005. fax: (949) 733-2986. these offices are supported by representatives and distributors in many countries world-wide. ?dynex semiconductor 2003 technical documentation ?not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, which are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
|
