dsa 90 c 200 hb preliminary schottky diode symbol definition r a t i n g s features / advantages: very low vf extremely low switching losses low irm values improved thermal behaviour high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching typ. max. i fsm i r a v 450 i fav a v f 0.96 r thjc 0.55 k/w v r = 1 2 3 min. 45 t = 10 ms applications: rectifiers in switch mode power supplies (smps) free wheeling diode in low voltage converters v rrm v 200 0.9 t vj vc = t vj c =ma 5 package: part number v r = t vj =c i f =a v t c = 145c rectangular, d = 0.5 p tot 275 w t c c = t vj 175 c -55 v i rrm fav = = 200 45 45 t vj =45c dsa 90 c 200 hb v a 200 v 200 25 25 25 max. repetitive reverse voltage reverse current forward voltage average forward current thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current conditions unit 1.18 t vj c =25 c j 260 pf j unction capacitance v= v; 24 t 125 v f0 v 0.52 t vj = 175c r f 6.5 f = 1 mhz = c 25 m v 0.86 t vj =c i f =a v 45 125 1.14 i f =a 90 i f =a 90 2x threshold voltage slope resistance for power loss calculation only backside: cathode (50 hz), sine v f = 0.86 v housing: high performance schottky diode low loss and soft recovery common cathode to-247 r industry standard outline r epoxy meets ul 94v-0 r rohs compliant r vj ma ixys reserves the right to change limits, conditions and dimensions. ? 2008 ixys all rights reserved 20080605b data according to iec 60747and per diode unless otherwise specified
dsa 90 c 200 hb preliminary i rms a per pin 70 r thch k/w 0.25 m d nm 1.2 mounting torque 0.8 t stg c 150 storage temperature -55 weight g 6 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit i is typically limited by: 1. pin-to-chip re sistance; or by 2. current capability of the chip. in case of 1, a common cathode/anode configuration and a non-isol ated backside, the whole current capability can be used by con necting the backside. f c n 120 mounting force with clip 20 ordering delivering mode base qty code key standard part name dsa 90 c 200 hb 502854 tube 30 xxxxxx yyww logo marking on product datecode assembly code abcdef product marking d s a 90 c 200 hb part number diode schottky diode low vf common cathode to-247ad (3) = = = 1) 1 ) marking on product DSA90C200HB current rating [a] reverse voltage [v] = = = = rms ixys reserves the right to change limits, conditions and dimensions. ? 2008 ixys all rights reserved 20080605b data according to iec 60747and per diode unless otherwise specified
dsa 90 c 200 hb preliminary symbol inches millimeters min max min max a 0.185 0.209 4.70 5.30 a1 0.087 0.102 2.21 2.59 a2 0.059 0.098 1.50 2.49 d 0.819 0.845 20.79 21.45 e 0.610 0.640 15.48 16.24 e2 0.170 0.216 4.31 5.48 e 0.215 bsc 5.46 bsc l 0.780 0.800 19.80 20.30 l1 - 0.177 - 4.49 ?p 0.140 0.144 3.55 3.65 q 0.212 0.244 5.38 6.19 s 0.242 bsc 6.14 bsc b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 d1 0.515 - 13.07 - d2 0.020 0.053 0.51 1.35 e1 0.530 - 13.45 - ?p1 - 0.291 - 7.39 outlines to-247 ixys reserves the right to change limits, conditions and dimensions. ? 2008 ixys all rights reserved 20080605b data according to iec 60747and per diode unless otherwise specified
dsa 90 c 200 hb preliminary 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 04080120160200 0.001 0.010 0.100 1.000 10.000 0 102030405060708090 0 10 20 30 40 50 60 70 80 90 100 0.001 0.01 0.1 1 0.1 1 0 40 80 120 160 0 10 20 30 40 50 60 70 80 90 100 i f(av) [a] t c [c] t [s] 0 50 100 150 200 10 100 1000 c t [pf] i r [ma] i f [a] v f [v] v r [v] v r [v] z thjc [k/w] 25c 0.08 dc 0.25 0.33 single pulse d=0.5 t vj = 150c i f(av) [a] p (av) [w] DSA90C200HB d=0.5 0.17 t vj = 150c 125c 25c 50c 75c 100c 125c t vj =25c d= dc 0.5 0.33 0.25 0.17 0.08 fig. 1 maximum forward voltage drop characteristics fig. 2 typ. reverse current i r versus reverse voltage v r fig. 3 typ. junction capacitance c t versus reverse voltage v r fig. 4 avg: forward current i f(av) versus case temperature t c fig. 5 forward power loss characteristics fig. 6 transient thermal impedance junction to case at various duty cycles ixys reserves the right to change limits, conditions and dimensions. ? 2008 ixys all rights reserved 20080605b data according to iec 60747and per diode unless otherwise specified
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