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contents features ........................................................... 1 applications ...................................................... 1 pin assignment ................................................ 1 block diagram .................................................. 2 selection guide ................................................ 3 output configurations ...................................... 4 advantage over the s-805 series .................... 5 absolute maximum ratings ............................. 6 electrical characteristics .................................. 7 test circuits ................................................... 23 technical terms ............................................ 24 operation ....................................................... 26 characteristics ............................................... 28 measuring circuits ......................................... 31 application circuit examples .......................... 32 notes .............................................................. 34 dimensions, taping ....................................... 35 discontinued product
rev.2.0 seiko instruments inc. 1 * s-807 series will be summarized into s-808 series. high-precision voltage detector s-807 series the s-807 series is an adjustment-free high-precision voltage detector made using the cmos process. the output voltage is fixed internally, with an accuracy of 2.4%. two output types are available, nch open- drain and cmos output (active ?h? and ?l?), both of which have various product lineups. this series features much lower current consumption and higher detection voltage accuracy than the s-805 series. super- miniature package is added for the s-807 series, the s-807xxsx series. this small sot-23-5 style package allows the designer to shrink the size of his finished product. electrical specs for the s- 807xxsx series are the same as the standard s-807 series. output forms of the s-807xxsx series are nch open-drain and cmos active ?l?. nn pin assignment nn features ultra-low current consumption 1.0 ma typ. (v dd =4.5 v) high-precision detection voltage 2.4% wide operating voltage range 1.0 to 15 v good hysteresis characteristics 5% typ. wide operating temperature range -30c to+80c 3 output forms : nch open-drain, cmos output active h , active l to-92, sot-89-3 and sot-23-5 package nn applications battery checker battery backup for memories power failure detector reset for microcomputer store signal detector for non- volatile ram top view top view 1 out 2 v dd 3 v ss 1 2 3 bottom view 1 2 3 1 out 2 v dd 3 v ss (1) to-92 (2) sot-89-3 (3) sot-23-5 1 2 3 1 out 2 v dd 3 v ss 4 nc 5 nc 5 4 figure 1 discontinued product
high-precision voltage detector s-807 series 2 seiko instruments inc. nn block diagram + - out v dd 2 v ss 3 1 (1) nch open-drain output (2) cmos active low output (3) cmos active high output figure 2 - + out v ss v dd 2 3 1 - + out v ss v dd 2 3 1 * * * parasitic diode discontinued product
high-precision voltage detector s-807 series seiko instruments inc. 3 nn selection guide table 1 detection voltage range (v) hysteresis width typ. (v) cmos output (low) cmos output (high) nch open-drain to-92 sot-89-3* sot-23-5* to-92 sot-89-3* to-92 sot-89-3* sot-23-5* 1.5 v2.4% 0.075 s-80715al-ac-x s-80715an-dc-x 1.6 v2.4% 0.08 s-80716al-ad-x s-80716an s-80716an-dd-x 1.7 v2.4% 0.085 s-80717al s-80717al-ae-x s-80717an s-80717an-de-x s-80717sn-de-x 1.8 v2.4% 0.09 s-80718al s-80718al-af-x s-80718sl-af-x s-80718ah-bf-t1 s-80718an s-80718an-df-x 1.9 v2.4% 0.095 s-80719al s-80719al-ag-x s-80719sl-ag-x s-80719an s-80719an-dg-x s-80719sn-dg-x 2.0 v2.4% 0.1 s-80720al-ah-x s-80720sl-ah-x s-80720an s-80720an-dh-x s-80720sn-dh-x 2.1 v2.4% 0.105 s-80721al s-80721al-aj-x s-80721sl-aj-x s-80721an s-80721an-dj-x s-80721sn-dj-x 2.2 v2.4% 0.11 s-80722al s-80722al-ak-x s-80722an s-80722an-dk-x 2.3 v2.4% 0.115 s-80723al s-80723al-al-x s-80723sl-al-x s-80723an s-80723an-dl-x s-80723sn-dl-x 2.4 v2.4% 0.12 s-80724al s-80724al-am-x s-80724an s-80724an-dm-x s-80724sn-dm-x 2.5 v2.4% 0.125 s-80725al s-80725al-an-x s-80725sl-an-x s-80725ah-bn-x s-80725an s-80725an-dn-x s-80725sn-dn-x 2.6 v2.4% 0.13 s-80726al-ap-x s-80726an s-80726an-dp-x 2.7 v2.4% 0.135 s-80727al s-80727al-aq-x s-80727sl-aq-x s-80727an s-80727an-dq-x s-80727sn-dq-x 2.8 v2.4% 0.14 s-80728al-ar-x s-80728sl-ar-x s-80728an s-80728an-dr-x s-80728sn-dr-x 2.9 v2.4% 0.145 s-80729al s-80729al-as-x s-80729an-ds-x 3.0 v2.4% 0.15 s-80730al s-80730al-at-x s-80730sl-at-x s-80730an s-80730an-dt-x s-80730sn-dt-x 3.1 v2.4% 0.155 s-80731al s-80731al-av-x s-80731ah s-80731ah-bv-x s-80731an s-80731an-dv-x 3.2 v2.4% 0.16 s-80732al s-80732al-aw-x s-80732sl-aw-x s-80732an s-80732an-dw-x 3.3 v2.4% 0.165 s-80733al s-80733al-ax-x s-80733sl-ax-x s-80733ah s-80733an s-80733an-dx-x s-80733sn-dx-x 3.4 v2.4% 0.17 s-80734al s-80734al-ay-x s-80734an s-80734an-dy-x 3.5 v2.4% 0.175 s-80735al s-80735al-az-x s-80735sl-az-x s-80735an s-80735an-dz-x s-80735sn-dz-x 3.6v2.4% 0.18 s-80736al-a0-x s-80736an s-80736an-d0-x 3.7v2.4% 0.185 s-80737al s-80737al-a1-x s-80737an s-80737an-d1-x 3.8 v2.4% 0.19 s-80738al s-80738al-a2-x s-80738an s-80738an-d2-x 3.9 v2.4% 0.195 s-80739al s-80739al-a3-x s-80739an s-80739an-d3-x 4.0 v2.4% 0.2 s-80740al s-80740al-a4-x s-80740sl-a4-x s-80740ah s-80740ah-b4-x s-80740an s-80740an-d4-x s-80740sn-d4-x 4.1 v2.4% 0.205 s-80741al s-80741al-a5-x s-80741an s-80741an-d5-x 4.2 v2.4% 0.21 s-80742al s-80742al-a6-x s-80742sl-a6-x s-80742an s-80742an-d6-x s-80742sn-d6-x 4.3 v2.4% 0.215 s-80743al s-80743al-a7-x s-80743an s-80743an-d7-x 4.4 v2.4% 0.22 s-80744al s-80744al-a8-x s-80744an s-80744an-d8-x s-80744sn-d8-x 4.295 to 4.605 release voltage 4.70 max. s-80744hl s-80744hl-u8-x 4.5 v2.4% 0.225 s-80745al s-80745al-a9-x s-80745sl-a9-x s-80745ah-b9-x s-80745an s-80745an-d9-x s-80745sn-d9-x 4.6 v2.4% 0.23 s-80746al s-80746al-ea-x s-80746an-ja-x 4.7 v2.4% 0.235 s-80747al s-80747al-eb-x s-80747an-jb-x 4.8 v2.4% 0.24 s-80748al-ec-x s-80748an s-80748an-jc-x 4.9 v2.4% 0.245 s-80749al-ed-x s-80749an-jd-x 5.0 v2.4% 0.25 s-80750al-ee-x s-80750sl-ee-x s-80750an s-80750an-je-x s-80750sn-je-x 5.1 v2.4% 0.255 s-80751al s-80751sl-ef-x s-80751an s-80751an-jf-x s-80751sn-jf-x 5.2 v2.4% 0.26 s-80752al-eg-t1 s-80752sl-eg-t1 s-80752an-jg-t1 5.3 v2.4% 0.265 s-80753an 5.5 v2.4% 0.275 s-80755al-ek-x 6.1 v2.4% 0.305 s-80761sl-er-x 6.3 v2.4% 0.315 s-80763an-jt-x 7.7v2.4% 0.385 s-80777sn-j8-x * the last digit of the model name changes depending upon the packing form when it is an sot package product (s-807xxsx series is packed on tape). s : stick t : tape (t1 and t2 types are available depending on the direction of detectors on the tape.) ** please ask our sales person if you need another detection voltage product. discontinued product
high-precision voltage detector s-807 series 4 seiko instruments inc. nn output configurations 1. s-807 series model numbering conventions nch open-drain (?l? reset type) cmos output (?l? reset type) cmos output (?h? reset type) s-807 series ?n? is the last letter of the model number. ex. s-80732an ?l? is the last letter of the model number. ex. s-80718al ?h? is the last letter of the model number. ex. s-80740ah 2. output configurations and their implementations implementation nch cmos (?l?) cmos (?h?) with different power supplies ? with active low reset cpus ? ? with active high reset cpus ? as power resets employing cr circuits ? with voltage divider resistors to vary (-v det ) ? v / d cmos v dd v ss out v dd 2 v dd 1 v / d nch cpu example with two power supplies v ss out cpu v ss v dd v / d nch cpu examples with one power supply or figure 3 out discontinued product
high-precision voltage detector s-807 series seiko instruments inc. 5 nn advantage over the s-805 series the s-807 series, in comparison with conventional reset ics such as the s-805 series, offers greater detection voltage precision (twice that of conventional units) and lower current consumption (half that of conventional units). these characteristics result in the following advantages over conventional units. 1. advantages of greater detection voltage precision 1.1 detecting lithium battery service life the discharge characteristics of lithium batteries are shown in figure 4. when using the s-805 series, the service life can be detected over t1. when using the s-807 series, it can be detected over t2. this improvement in detection precision of the s- 807 series means that batteries can be used over more of their service life. 1.2 detecting a power voltage at two points it is usual for the cpu to detect the power voltage at two points, one to caution and the other to reset. the service life of battery may also be detected at two points, one to caution and the other to request immediate replacement. two voltage values to be detected (no. 1 and no. 2) do not cross and the voltage can be detected correctly. 1.3 voltage drop when modifying detection voltage if no voltage to be detected is suitable, the voltage can be set higher in nch open-drain output products by using a resistor divider. (example : when detecting 6v or 9v.) when 8v is detected using the s-8054hn (a 4v5% device), the -vdet tolerance becomes 24.000.05=0.8v (r1=r2). in constrast, the s- 80740an (a 4v2.4% device) can hold down the tolerance to 24.000.024=0.384v (r1=r2). must be close v t no. 2 no. 1 figure 5 t1 s-807 s-805 v t figure 4 t2 r2 r1 figure 6 nch open-drain output product s-807 xxan/sn discontinued product
high-precision voltage detector s-807 series 6 seiko instruments inc. 2. others 2.1 low current consumption the current consumption is half of that of a conventional voltage detection ic, so the battery service life can be prolonged. 2.2 wide operating voltage range the maximum operating voltage of a conventional ic is 10 v. for the s-807 series, the maximum detectable voltage has been increased to 15 v. nn absolute maximum ratings parameter symbol ratings unit power supply voltage v dd -v ss 18 v output voltage nch open-drain v out v ss -0.3 to 18 cmos v ss -0.3 to v dd +0.3 output current i out 50 ma power dissipation p d to-92, sot-89-3 200 mw sot-23-5 150 operating temperature t opr -30 to +80 c storage temperature t stg -40 to +125 1.4 operating margins of power and minimum operating voltage of cpu are close set the voltage so that it will be detected between the power voltage and the minimum operating voltage of the cpu. thus, if two voltage points to be detected are very close, the voltage between those two points must be detected correctly. the s-807 series offers an excellent detection voltage precision, so the voltage between narrow limits can be detected correctly. v t 5 v min. operating voltage of cpu reset voltage to be detected figure 7 (unless otherwise specified : ta=25c) caution : keep static electricity to a minimum. discontinued product
high-precision voltage detector s-807 series seiko instruments inc. 7 nn electrical characteristics 1. s-80715al-ac-x, s-80715an-dc-x (detection voltage : 1.464 to 1.536 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 1.464 1.500 1.536 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 3.0 v ? 1.4 3.5 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.19 ? mv/c ? 2. s-80716al-ad-x, s-80716an/an-dd-x (detection voltage : 1.561 to 1.639 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 1.561 1.600 1.639 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 3.0 v ? 1.4 3.5 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.20 ? mv/c ? 3. s-80717al/al-ae-x, s-80717an/an-de-x, s-80717sn-de-x (detection voltage : 1.659 to 1.741 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 1.659 1.700 1.741 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 3.0 v ? 1.4 3.5 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.21 ? mv/c ? d -v det d ta d -v det d ta d -v det d ta discontinued product
high-precision voltage detector s-807 series 8 seiko instruments inc. 4. s-80718al/al-af-x, s-80718an/an-df-x, s-80718sl-af-x (detection voltage : 1.756 to 1.844 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 1.756 1.800 1.844 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 3.0 v ? 1.4 3.5 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.23 ? mv/c ? 5. s-80718ah-bf-t1 (detection voltage : 1.756 to 1.844 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 1.756 1.800 1.844 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 3.0 v ? 1.4 3.5 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out pch v ds = 0.5 v v dd = 1.2 v 0.03 0.09 ? ma 4 nch v ds = 0.5 v v dd = 4.8 v 4.06 8.36 ? 3 temperature characteristic of - v det ta=-30c to 80c ? 0.23 ? mv/c ? 6. s-80719al/al-ag-x, s-80719an/an-dg-x s-80719sl-ag-x, s-80719sn-dg-x (detection voltage : 1.854 to 1.946 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 1.854 1.900 1.946 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 3.0 v ? 1.4 3.5 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.24 ? mv/c ? d -v det d ta d -v det d ta d -v det d ta discontinued product
high-precision voltage detector s-807 series seiko instruments inc. 9 7. s-80720al-ah-x, s-80720an/an-dh-x s-80720sl-ah-x, s-80720sn-dh-x (detection voltage : 1.952 to 2.048 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 1.952 2.000 2.048 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 3.0 v ? 1.4 3.5 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.25 ? mv/c ? 8. s-80721al/al-aj-x, s-80721an/an-dj-x s-80721sl-aj-x, s-80721sn-dj-x (detection voltage : 2.049 to 2.151 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 2.049 2.100 2.151 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 4.5 v ? 1.4 3.5 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.26 ? mv/c ? 9. s-80722al/al-ak-x, s-80722an/an-dk-x (detection voltage : 2.147 to 2.253 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 2.147 2.200 2.253 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 4.5 v ? 1.4 3.5 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.28 ? mv/c ? d -v det d ta d -v det d ta d -v det d ta discontinued product
high-precision voltage detector s-807 series 10 seiko instruments inc. 10. s-80723al/al-al-x, s-80723an/an-dl-x s-80723sl-al-x, s-80723sn-dl-x (detection voltage : 2.244 to 2.356 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 2.244 2.300 2.356 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 4.5 v ? 1.4 3.5 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.29 ? mv/c ? 11. s-80724al/al-am-x, s-80724an/an-dm-x, s-80724sn-dm-x (detection voltage : 2.342 to 2.458 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 2.342 2.400 2.458 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 4.5 v ? 1.4 3.5 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.30 ? mv/c ? 12. s-80725al/al-an-x, s-80725an/an-dn-x s-80725sl-an-x, s-80725sn-dn-x (detection voltage : 2.440 to 2.560 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 2.440 2.500 2.560 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 4.5 v ? 1.4 3.5 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.31 ? mv/c ? d -v det d ta d -v det d ta d -v det d ta discontinued product
high-precision voltage detector s-807 series seiko instruments inc. 11 13. s-80725ah-bn-x (detection voltage : 2.440 to 2.560 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 2.440 2.500 2.560 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 4.5 v ? 1.4 3.5 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out pch v ds = 0.5 v v dd = 1.2 v 0.03 0.09 ? ma 4 nch v ds = 0.5 v v dd = 4.8 v 4.06 8.36 ? 3 temperature characteristic of - v det ta=-30c to 80c ? 0.31 ? mv/c ? 14. s-80726al-ap-x, s-80726an/an-dp-x (detection voltage : 2.537 to 2.663 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 2.537 2.600 2.663 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 4.5 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.33 ? mv/c ? 15. s-80727al/al-aq-x, s-80727an/an-dq-x s-80727sl-aq-x, s-80727sn-dq-x (detection voltage : 2.635 to 2.765 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 2.635 2.700 2.765 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 4.5 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.34 ? mv/c ? d -v det d ta d -v det d ta d -v det d ta discontinued product
high-precision voltage detector s-807 series 12 seiko instruments inc. 16. s-80728al-ar-x, s-80728an/an-dr-x s-80728sl-ar-x, s-80728sn-dr-x (detection voltage : 2.732 to 2.868 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 2.732 2.800 2.868 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 4.5 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.35 ? mv/c ? 17. s-80729al/al-as-x, s-80729an-ds-x (detection voltage : 2.830 to 2.970 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 2.830 2.900 2.970 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 4.5 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.36 ? mv/c ? 18. s-80730al/al-at-x, s-80730an/an-dt-x s-80730sl-at-x, s-80730sn-dt-x (detection voltage : 2.928 to 3.072 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 2.928 3.000 3.072 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 4.5 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.38 ? mv/c ? d -v det d ta d -v det d ta d -v det d ta discontinued product
high-precision voltage detector s-807 series seiko instruments inc. 13 19. s-80731al/al-av-x, s-80731an/an-dv-x (detection voltage : 3.025 to 3.175 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 3.025 3.100 3.175 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 4.5 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.39 ? mv/c ? 20. s-80731ah/ah-bv-x (detection voltage : 3.025 to 3.175 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 3.025 3.100 3.175 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 4.5 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out pch v ds = 0.5 v v dd = 1.2 v 0.03 0.09 ? ma 4 v dd = 2.4 v 0.15 0.30 ? nch v ds = 0.5 v v dd = 4.8 v 4.06 8.36 ? 3 temperature characteristic of - v det ta=-30c to 80c ? 0.39 ? mv/c ? 21. s-80732al/al-aw-x, s-80732an/an-dw-x, s-80732sl-aw-x (detection voltage : 3.123 to 3.277 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 3.123 3.200 3.277 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 4.5 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.40 ? mv/c ? d -v det d ta d -v det d ta d -v det d ta discontinued product
high-precision voltage detector s-807 series 14 seiko instruments inc. 22. s-80733al/al-ax-x, s-80733an/an-dx-x s-80733sl-ax-x, s-80733sn-dx-x (detection voltage : 3.220 to 3.380 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 3.220 3.300 3.380 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 4.5 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.41 ? mv/c ? 23. s-80733ah (detection voltage : 3.220 to 3.380 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 3.220 3.300 3.380 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 4.5 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out pch v ds = 0.5 v v dd = 1.2 v 0.03 0.09 ? ma 4 v dd = 2.4 v 0.15 0.30 ? nch v ds = 0.5 v v dd = 4.8 v 4.06 8.36 ? 3 temperature characteristic of - v det ta=-30c to 80c ? 0.41 ? mv/c ? 24. s-80734al/al-ay-x, s-80734an/an-dy-x (detection voltage : 3.318 to 3.482 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 3.318 3.400 3.482 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 4.5 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.43 ? mv/c ? d -v det d ta d -v det d ta d -v det d ta discontinued product
high-precision voltage detector s-807 series seiko instruments inc. 15 25. s-80735al/al-az-x, s-80735an/an-dz-x s-80735sl-az-x, s-80735sn-dz-x (detection voltage : 3.416 to 3.584 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 3.416 3.500 3.584 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 4.5 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.44 ? mv/c ? 26. s-80736al-a0-x, s-80736an/an-d0-x (detection voltage : 3.513 to 3.687 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 3.513 3.600 3.687 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 4.5 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.45 ? mv/c ? 27. s-80737al/al-a1-x, s-80737an/an-d1-x (detection voltage : 3.611 to 3.789 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 3.611 3.700 3.789 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 6.0 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.46 ? mv/c ? d -v det d ta d -v det d ta d -v det d ta discontinued product
high-precision voltage detector s-807 series 16 seiko instruments inc. 28. s-80738al/al-a2-x, s-80738an/an-d2-x (detection voltage : 3.708 to 3.892 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 3.708 3.800 3.892 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 6.0 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.48 ? mv/c ? 29. s-80739al/al-a3-x, s-80739an/an-d3-x (detection voltage : 3.806 to 3.994 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 3.806 3.900 3.994 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 6.0 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? pch (cmos output) v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.49 ? mv/c ? 30. s-80740al/al-a4-x, s-80740an/an-d4-x s-80740sl-a4-x, s-80740sn-d4-x (detection voltage : 3.904 to 4.096 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 3.904 4.00 4.096 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 6.0 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? v dd = 3.6 v 3.18 7.00 ? pch (cmos output) v ds = 0.5 v v dd = 6.0 v 0.46 0.75 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.5 ? mv/c ? d -v det d ta d -v det d ta d -v det d ta discontinued product
high-precision voltage detector s-807 series seiko instruments inc. 17 31. s-80740ah/ah-b4-x (detection voltage : 3.904 to 4.096 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 3.904 4.000 4.096 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 6.0 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out pch v ds = 0.5 v v dd = 1.2 v 0.03 0.09 ? ma 4 v dd = 2.4 v 0.15 0.30 ? nch v ds = 0.5 v v dd = 6.0 v 4.73 9.60 ? 3 temperature characteristic of - v det ta=-30c to 80c ? 0.5 ? mv/c ? 32. s-80741al/al-a5-x, s-80741an/an-d5-x (detection voltage : 4.001 to 4.199 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 4.001 4.100 4.199 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 6.0 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? v dd = 3.6 v 3.18 7.00 ? pch (cmos output) v ds = 0.5 v v dd = 6.0 v 0.46 0.75 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.51 ? mv/c ? 33. s-80742al/al-a6-x, s-80742an/an-d6-x s-80742sl-a6-x, s-80742sn-d6-x (detection voltage : 4.099 to 4.301 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 4.099 4.200 4.301 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 6.0 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? v dd = 3.6 v 3.18 7.00 ? pch (cmos output) v ds = 0.5 v v dd = 6.0 v 0.46 0.75 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.53 ? mv/c ? d -v det d ta d -v det d ta d -v det d ta discontinued product
high-precision voltage detector s-807 series 18 seiko instruments inc. 34. s-80743al/al-a7-x, s-80743an/an-d7-x (detection voltage : 4.196 to 4.404 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 4.196 4.300 4.404 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 6.0 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? v dd = 3.6 v 3.18 7.00 ? pch (cmos output) v ds = 0.5 v v dd = 6.0 v 0.46 0.75 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.54 ? mv/c ? 35. s-80744al/al-a8-x, s-80744an/an-d8-x, s-80744sn-d8-x (detection voltage : 4.294 to 4.506 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 4.294 4.400 4.506 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 6.0 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? v dd = 3.6 v 3.18 7.00 ? pch (cmos output) v ds = 0.5 v v dd = 6.0 v 0.46 0.75 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.55 ? mv/c ? 36. s-80744hl/hl-u8-x (detection voltage : 4.295 to 4.605 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 4.295 4.450 4.605 v 1 release voltage +v det ? ? 4.70 v 1 current consumption i ss v dd = 6.0 v ? 2.6 6.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? pch v ds = 0.5 v v dd = 4.8 v 0.36 0.62 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.56 ? mv/c ? d -v det d ta d -v det d ta d -v det d ta discontinued product
high-precision voltage detector s-807 series seiko instruments inc. 19 37. s-80745al/al-a9-x, s-80745an/an-d9-x s-80745sl-a9-x, s-80745sn-d9-x (detection voltage : 4.392 to 4.608 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 4.392 4.50 4.608 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 6.0 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? v dd = 3.6 v 3.18 7.00 ? pch (cmos output) v ds = 0.5 v v dd = 6.0 v 0.46 0.75 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.56 ? mv/c ? 38. s-80745ah-b9-x (detection voltage : 4.392 to 4.608 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 4.392 4.500 4.608 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 6.0 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out pch v ds = 0.5 v v dd = 1.2 v 0.03 0.09 ? ma 4 v dd = 2.4 v 0.15 0.30 ? nch v ds = 0.5 v v dd = 6.0 v 4.73 9.60 ? 3 temperature characteristic of - v det ta=-30c to 80c ? 0.56 ? mv/c ? 39. s-80746al/al-ea-x, s-80746an-ja-x (detection voltage : 4.489 to 4.711 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 4.489 4.600 4.711 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 6.0 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? v dd = 3.6 v 3.18 7.00 ? pch (cmos output) v ds = 0.5 v v dd = 6.0 v 0.46 0.75 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.58 ? mv/c ? d -v det d ta d -v det d ta d -v det d ta discontinued product
high-precision voltage detector s-807 series 20 seiko instruments inc. 40. s-80747al/al-eb-x, s-80747an-jb-x (detection voltage : 4.587 to 4.813 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 4.587 4.700 4.813 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 6.0 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? v dd = 3.6 v 3.18 7.00 ? pch (cmos output) v ds = 0.5 v v dd = 6.0 v 0.46 0.75 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.59 ? mv/c ? 41. s-80748al-ec-x, s-80748an/an-jc-x (detection voltage : 4.684 to 4.916 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 4.684 4.800 4.916 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 6.0 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? v dd = 3.6 v 3.18 7.00 ? pch (cmos output) v ds = 0.5 v v dd = 6.0 v 0.46 0.75 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.60 ? mv/c ? 42. s-80749al-ed-x, s-80749an-jd-x (detection voltage : 4.782 to 5.018 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 4.782 4.900 5.018 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 6.0 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? v dd = 3.6 v 3.18 7.00 ? pch (cmos output) v ds = 0.5 v v dd = 6.0 v 0.46 0.75 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.61 ? mv/c ? d -v det d ta d -v det d ta d -v det d ta discontinued product
high-precision voltage detector s-807 series seiko instruments inc. 21 43. s-80750al-ee-x, s-80750an/an-je-x s-80750sl-ee-x, s-80750sn-je-x (detection voltage : 4.880 to 5.120 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 4.880 5.000 5.120 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 6.0 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? v dd = 3.6 v 3.18 7.00 ? pch (cmos output) v ds = 0.5 v v dd = 6.0 v 0.46 0.75 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.63 ? mv/c ? 44. s-80751al, s-80751an/an-jf-x s-80751sl-ef-x, s-80751sn-jf-x (detection voltage : 4.977 to 5.223 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 4.977 5.100 5.223 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 6.0 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? v dd = 3.6 v 3.18 7.00 ? pch (cmos output) v ds = 0.5 v v dd = 6.0 v 0.46 0.75 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.64 ? mv/c ? 45. s-80752al-eg-t1, s-80752an-je-t1, s-80752sl-eg-t1 (detection voltage : 5.075 to 5.325 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 5.075 5.200 5.325 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 6.0 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? v dd = 3.6 v 3.18 7.00 ? pch (cmos output) v ds = 0.5 v v dd = 6.0 v 0.46 0.75 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.65 ? mv/c ? d -v det d ta d -v det d ta d -v det d ta discontinued product
high-precision voltage detector s-807 series 22 seiko instruments inc. 46. s-80753an (detection voltage : 5.172 to 5.428 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 5.172 5.300 5.428 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 6.0 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? v dd = 3.6 v 3.18 7.00 ? pch (cmos output) v ds = 0.5 v v dd = 6.0 v 0.46 0.75 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.66 ? mv/c ? 47. s-80755al-ek-x (detection voltage : 5.368 to 5.632 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 5.368 5.500 5.632 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 6.0 v ? 1.0 3.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? v dd = 3.6 v 3.18 7.00 ? pch (cmos output) v ds = 0.5 v v dd = 6.0 v 0.46 0.75 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.69 ? mv/c ? 48. s-80761sl-er-x (detection voltage : 5.953 to 6.247 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 5.953 6.100 6.247 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 7.5 v ? 1.9 3.6 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? v dd = 3.6 v 3.18 7.00 ? v dd = 4.8 v 4.13 8.56 ? pch (cmos output) v ds = 0.5 v v dd = 8.4 v 0.59 0.96 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.78 ? mv/c ? d -v det d ta d -v det d ta d -v det d ta discontinued product
high-precision voltage detector s-807 series seiko instruments inc. 23 49. s-80763an-jt-x (detection voltage : 6.148 to 6.452 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 6.148 6.300 6.452 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 7.5 v ? 1.9 3.6 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? v dd = 3.6 v 3.18 7.00 ? v dd = 4.8 v 4.13 8.56 ? pch (cmos output) v ds = 0.5 v v dd = 8.4 v 0.59 0.96 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.81 ? mv/c ? 50. s-80777sn-j8-x (detection voltage : 7.515 to 7.885 v) (unless otherwise specified : ta=25c) parameter symbol conditions min. typ. max. unit test circuit detection voltage -v det 7.515 7.700 7.885 v 1 hysteresis width v hys -v det 0.02 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd = 9.0 v ? 2.2 4.0 ma 2 operating voltage v dd 1.0 ? 15.0 v 1 output current i out nch v ds = 0.5 v v dd = 1.2 v 0.23 0.50 ? ma 3 v dd = 2.4 v 1.60 3.70 ? v dd = 3.6 v 3.18 7.00 ? v dd = 4.8 v 4.13 8.56 ? v dd = 6.0 v 4.73 9.60 ? pch (cmos output) v ds = 0.5 v v dd = 9.6 v 0.65 1.05 ? 4 temperature characteristic of - v det ta=-30c to 80c ? 0.99 ? mv/c ? nn test circuits (2) v ds v ds v dd v dd v dd v dd out v ss crt r(100 k w )* out v dd * r is unnecessary for cmos output products. v ss out a v dd v ss v dd v a v out v ss v dd a v (1) (3) (4) v v figure 8 s-807 series s-807 series s-807 series s-807 series d -v det d ta d -v det d ta discontinued product
high-precision voltage detector s-807 series 24 seiko instruments inc. nn technical terms 1. detection voltage (-v det ) detection voltage -v det is the voltage at which the detector?s output goes active. in products with ?nch open-drain? and ?cmos active low output? configurations the output goes low on detection. it goes high in products with cmos active high output configurations. this detection voltage varies slightly among products of the same type. the variation of voltages between the specified minimum [(-v det )min.] and maximum [(-v det )max.] values is called the detection voltage range. (see figure 9.) example : for the s-80745an, detection voltage lies in the range 4.392(-v det )4.608. 2. release voltage (+v det ) release voltage +v det is the voltage at which a unit?s output returns (is ?released?) to its inactive state (high for nch and cmos active low output configurations, and low for cmos active high output configurations). the value of this voltage for any single unit lies in a range determined from the value of that unit?s detection voltage (see figure 10): (-v det )1.02(+v det )(-v det )1.08. example : for an s-80745an with -v det =4.608, release voltage lies in the range 4.700(+v det )4.997. for an s-80745an with -v det =4.392, release voltage lies in the range 4.480(+v det )4.743. when calculating the overall release voltage range for s-807 series products, care must be taken to consider the variation in the series? detection voltage values. the minimum and maximum values for release voltage [(+v det )min. and (+v det )max.)] must be determined using (-v det )min. and (-v det )max.: (+v det )min.=[(-v det )min.]1.02; (+v det )max.=[(-v det )max.]1.08. example : for s-80745an voltage detectors, release voltage lies in the range 4.480(+v det )4.977. note : detection voltage(-v det ) and release voltage(+v det ) range equally from 4.480v to 4.608v, however, (+v det ) > (-v det ). 3. hysteresis width (v hys ) hysteresis width is the voltage difference between a device?s detection voltage and its release voltage (see figure 14. v hys =b-a). by giving a device hysteresis, erroneous toggling of the output due to noise at the input is avoided. 4. through-type current through-type current refers to the instantaneous current flow which occurs at the moment a voltage detector output toggles. this current is quite large in devices with cmos configured outputs, and also occurs to some extent in nch open-drain configured devices. s-807 series voltage detectors are specially designed to limit through-type currents and are superior to s-805 series devices in this respect. (see current consumption characteristics.) release voltage range detection voltage range v dd out (-v det )max. (-v det )min. detection voltage figure 9 (+v det )max. (+v det )min. v dd release voltage out figure 10 discontinued product
high-precision voltage detector s-807 series seiko instruments inc. 25 5. oscillation in applications where a resistor is connected to the voltage detector input (figure 11 and 12), the through-type current generated when the output goes from low to high (release) causes a voltage drop equal to [through-type current][input resistance] across the resistor. when the input voltage resultantly drops below the detection voltage -v det , the output voltage returns to its low level. in this state, the through-type current -- and its resultant voltage drop -- have disappeared, and the output goes back from low to high. again, a through-type current is generated, a voltage drop appears, and the process repeats. oscillation refers to this unstable condition. figure 11 figure 12 power reset mis-implementation mis-implementation with input voltage divider di (cmos output) r v in v ss v dd c out s- 807xxal /sl rb ra out v in v ss v dd (cmos output) s- 807xxal /sl discontinued product
high-precision voltage detector s-807 series 26 seiko instruments inc. nn operation 1. basic operation (1) when power supply voltage v dd is greater than the release voltage +v det , the nch transistor is off and the pch transistor on, causing v dd (high) to appear at the output. with the nch transistor of figure 13 (a) off, the comparator input voltage is (rb+rc)/(ra+rb+rc)v dd . (2) when power supply voltage v dd goes below +v det , the output continues to maintain the power supply voltage level, as long as v dd remains above the detection voltage -v det . when v dd does fall below -v det (a in figure 14), the nch transistor goes on, the pch transistor goes off, and v ss appears at the output. with the nch transistor of figure 13 (a) on, the comparator input voltage is rb/(ra+rb)v dd . (3) when v dd falls below the minimum operating voltage, the output becomes undefined. however, output will revert to v dd if a pull-up has been employed. (4) v ss will again be output when v dd rises above the minimum operating voltage. v ss will continue to be output even when v dd surpasses -v det , as long as it does not exceed the release voltage +v det . (5) when v dd rises above +v det (b in figure 14), the nch transistor goes off, the pch transistor goes on, and v dd appears at the output. v dd rb v ss v ref rc ra (a) - + out pch nch * hysteresis width (v hys ) a b v dd v ss out v dd v ss (1) (2) (3) (5) (4) figure 14 figure 13 minimum operating voltage release voltage(+v det ) detection voltage(-v det ) comparator output * parasitic diode discontinued product
high-precision voltage detector s-807 series seiko instruments inc. 27 4. other characteristics (1) temperature characteristic of detection voltage because of the excellent temperature characteristic of the reference voltage circuit, the temperature characteristics of the detection voltage are expressed by the following formula in the range of -30c to +80c. *-v ref is 0.65 v min., 0.8 v typ., 0.95 v max. (2) temperature characteristic of release voltage v in + v ss v dd v out f i gu re 15 comparator v in - bias 3. comparator the comparator drives a differential amplifier with a current consumption of only 0.5ma as shown in figure 15. it features: good matching characteristics wide operating voltage range low offset voltage 2. reference voltage circuit the s-807 series has 0.8 v typical reference voltage circuit as- v ref (a high-stable reference voltage source) . it features: low power consumption good temperature characteristic -v ref -v ref -v det -v det +v hys ( 0.1) mv/ c typ. ( 0.1) mv/ c discontinued product
high-precision voltage detector s-807 series 28 seiko instruments inc. nn characteristics 1. detection voltage (v det ) - temperature (ta) 80 80 1.1 s-80730al 1.2 s-80740ah release voltage detection voltage 3.2 3.1 3.0 2.9 v det (v) -20 0 20 40 60 80 ta ( c) 4.2 4.1 4.0 3.9 release voltage detection voltage v det (v) -20 0 20 40 60 80 ta ( c) 2. current consumption (i ss ) - input voltage (v in ) 2.1 s-80730al 2.2 s-80740ah 75.0 5.0 4.0 3.0 2.0 1.0 0 i ss (ma) 2.0 6.0 10.0 14.0 18.0 140 5.0 4.0 3.0 2.0 1.0 0 i ss (ma) 2.0 6.0 10.0 14.0 18.0 v in (v) v in (v) 3. current consumption (i ss ) - temperature (ta) 3.1 s-80730al v dd =4.5 v 1.6 1.2 0.8 0.4 i ss (ma) -20 0 20 40 60 ta ( c ) 3.2 s-80740ah v dd =6.0 v 1.6 1.2 0.8 0.4 i ss (ma) -20 0 20 40 60 ta ( c ) discontinued product
high-precision voltage detector s-807 series seiko instruments inc. 29 4. output transistor current (i out ) 4.1 nch transistor current v ds (v) i out (ma) v dd =4.8 v v dd =3.6 v v dd =2.4 v v dd =1.2 v 40 32 24 16 8 0 1.0 2.0 3.0 4.0 5.0 (i) v ds -i out (ii) v dd -i out ta=-30 c ta=25 c ta=80 c 6.4 4.8 8.0 3.2 1.6 0 i out (ma) 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 v dd (v) v ds =0.5 v 4.2 pch transistor current v ds -i out v dd =4.8 v v dd =3.6 v v dd =2.4 v v dd =1.2 v v ds (v) 1.0 2.0 3.0 4.0 5.0 i out (ma) 4.0 3.2 2.4 1.6 0.8 0 5.1 cmos active low output 5.2 cmos active high output 4.0 3.2 2.4 1.6 0.8 0 v out (v) 0.8 1.6 2.4 3.2 4.0 v dd (v) 5.0 4.0 3.0 2.0 1.0 0 v out (v) 1.0 2.0 3.0 4.0 5.0 v dd (v) 5. minimum operating voltage discontinued product
high-precision voltage detector s-807 series 30 seiko instruments inc. 6. dynamic response 6.1 nch open-drain output products 6.2 cmos active low output products 6.3 cmos active high output products rl=100 k w ?l? ? ?h? ?h? ? ?l? 10 2 10 1 10 0 10 -1 delay time (ms) 10 -4 10 -3 10 -2 10 -1 load capacitance ( m f) ?h? ? ?l? 10 -1 10 -2 10 -3 10 -4 10 -3 10 -2 10 -1 load capacitance ( m f) delay time (ms) ?l? ? ?h? ?h? ? ?l? delay time (ms) 10 -4 10 -3 10 -2 10 -1 load capacitance ( m f) 10 -1 10 -2 10 -3 10 -2 10 0 10 0 10 1 ?l? ? ?h? discontinued product
high-precision voltage detector s-807 series seiko instruments inc. 31 nn measuring circuits out oscilloscope v ds v dd v dd v dd (1) detection voltage v ss v dd v s-807 series (2) current consumption a v ss v dd v s-807 series (3) output transistor current out (b) pch transistor current (a) nch transistor current v ss v dd v s-807 series a v v dd v ds v ss v dd v s-807 series a v out out * r is unnecessary for cmos output products. *r(100 k w ) v dd (4) min. operating voltage v out v ss v dd s-807 (nch output) series v (5) dynamic response (b) cmos output products (a) nch open-drain output products p.g crt 100 k w 7 v cl v ss out s-807 series v dd p.g crt cl v ss out s-807 series v dd v ss 1 v 5 v input pulse *r (100 k w ) * r is unnecessary for cmos output products. figure 16 discontinued product
high-precision voltage detector s-807 series 32 seiko instruments inc. nn application circuit examples 1. reset circuits of microcomputers if the power supply voltage to a microcomputer falls below the specified level, unspecified operation may be performed or the contents of the memory register may be lost. when power supply voltage returns to normal, the microcomputer may need to be initialized before normal operations can be done. reset circuits protect microcomputers, in the event of current being momentarily switched off or lowered. with the s-807 series, the reset circuits shown in figures 17 to 19 can be easily constructed. v ss v dd micro- computer s-807xx al/sl figure 17 (nch open-drain output products only) v dd1 v ss v dd2 figure 18 micro- computer s-807xx an/sn v ss v dd micro- computer figure 19 s-807xx an/sn discontinued product
high-precision voltage detector s-807 series seiko instruments inc. 33 2. power-on reset circuit the nch open-drain output products of the s-807 series can be used to construct a power-on reset circuit. following is an example. di (nch open-drain products) r out v in v ss v dd s-807xx an/sn c + - figure 21 v dd (v) t (s) out (v) t (s) note 1: r should be 7.5kw or less for purpose of protection against oscillation. note 2: ?di? momentarily discharges the charge received via ?c? at the falling edge of power off. there is no need to insert a diode, when there is no conflict with application circuit even if there is a delay in the falling edge of out at the falling edge of power off. note 3: when there is a sharp rise in power, the output voltage may go ?h? momentarily in unstable range of the output voltage (the output voltage is unstable below the minimum operating voltage) . v dd (v) t (s) out (v) t (s) figure 20 (r 7.5k w ) discontinued product
high-precision voltage detector s-807 series 34 seiko instruments inc. 3. change of detection voltage in nch open-drain output products of the s-807 series, detection voltage can be changed with resistance dividers or diodes as shown in figures 22 and 23. in figure 22, hysteresis width is also changed. nn notes in cmos output products of s-807 series, high through current flows when detecting or releasing. if a high impedance is connected to the input, oscillation may be caused by the through current when lowering the voltage during releasing. in to-92 products, since there are projections and resin burrs on the roots of the lead terminals formed at the tiebar-cut, do not solder to them. when designing for mass production using an application circuit described here, take into account the deviation of components and temperature characteristics. seiko instruments inc. cannot take any responsibility for the patents on the circuits described here. detection voltage=v f1 +v f2 +-v det figure 23 figure 22 rb ra out v in v s v dd s- 807xx an/sn + - (nch open-drain products) (ra 7.5k w ) v f2 v f1 out v in v ss v dd s- 807xx an/sn (nch open-drain products) figure 29 detection voltage= hysteresis width= -v det ra+rb rb -v hys ra+rb rb note 1: the hysteresis width will be a little wider than the value of the formula above, because of the through current, if ra and rb are larger. note 2: ra should be 7.5kw or less for purpose of protection against oscillation. discontinued product
12.71.0 12.70.3(20 pitches 254.01.0 6.350.4 f 4.00.2 0.5max. 6.00.5 24.7max marked side 1 # pin 3 # pin 1.0max. 1.0max. 0.70.2 1.45max. feed direction 2.5min. feed direction marked side ftype t type no. yf003 a c sd 1 0 f 358 2 43 0.5 53 0.5 5 0.5 45 0.5 side spacer(place it in front) 330 47 262 leave enough space to accommodate 4 components. spacer 320 40 60 side spacer 165 320 feed derection 5.2max. 4.2max. 0.6max . 0.45 0.1 0.45 0.1 1.27 to-92 dimensions taping specifications reel specifications 4.2max. 0.45 0.1 1.27 5.2max. 0.45 0.1 0.6max. 2.5 +0.4 - 0.1 switch-back(wrap) specifications (1)loose (2)taped (reel/zigzag) yf003-a 990531 f 30 0.5 unit:mm 1 reel holds 2000 ics. marked side marked side feed direction discontinued product
3.250.15 ?1.5 +0.1 -0 ?1.0 +0.1 -0 4.00.1 2.00.05 0.270.05 1.40.2 feed direction sot-23-5 mp005-a 991105 0.95 0.1 2.90.2 +0.1 -0.06 0.16 1.90.2 0.40.1 12 3 4 5 210.5 20.2 (60) (60) f 130.2 12.5max. 9.00.3 +0.2 -0.3 2.8 1.6 1.10.1 0.45 1.3max 3 max. 3 max. 4.00.1 (10 pitches 40.0 0.2) taping specifications reel specifications dimensions unit mm 3000 pcs./reel discontinued product
2.00.1 0.30.05 4.00.1 10 pitches 40.00.2 8.00.1 ?1.5 +0.1 -0 2.00.05 ?1.5 +0.1 -0 4.750.1 13.00.3 16.5max (60) (60) sot-89-3 up003-a 990531 1.50.1 4.50.1 1.60.2 1.50.1 1.50.1 0.450.1 0.40.1 0.40.1 45 3 12 5 max. winding core unit:mm dimensions taping specifications reel specifications 1 reel holds 1000 ics. feed direction discontinued product
markings 990603 to-92 sot-23-5 sot-89-3 807 1 1 discontinued product
the information herein is subject to change without notice. seiko instruments inc. is not responsible for any problems caused by circuits or other diagrams described herein whose industrial properties, patents or other rights belong to third parties. the application circuit examples explain typical applications of the products, and do not guarantee any mass-production design. when the products described herein include strategic products (or service) subject to regulations, they should not be exported without authorization from the appropriate governmental authorities. the products described herein cannot be used as part of any device or equipment which influences the human body, such as physical exercise equipment, medical equipment, security system, gas equipment, vehicle or airplane, without prior written permission of seiko instruments inc. discontinued product

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