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this is information on a product in full production. august 2012 doc id 17548 rev 4 1/19 19 stf4n62k3, stfi4n62k3, sti4n62k3, stp4n62k3, STU4N62K3 n-channel 620 v, 1.7 ? typ., 3.8 a supermesh3? power mosfet in to-220fp, i2pakfp, i2pak, to-220 and ipak packages datasheet ? production data features 100% avalanche tested extremely high dv/dt capability gate charge minimized very low intrinsic capacitance improved diode reverse recovery characteristics zener-protected applications switching applications description these supermesh3? power mosfets are the result of improvements applied to stmicroelectronics? supermesh? technology, combined with a new optimized vertical structure. these devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. figure 1. internal schematic diagram order codes v dss r ds(on) max i d p tot stf4n62k3 stfi4n62k3 sti4n62k3 stp4n62k3 STU4N62K3 620 v < 2 ? 3.8 a 25 w 25 w 70 w 70 w 70 w 1 2 3 to-220fp 3 2 1 tab ipak i2pakfp 1 2 3 i2pak 1 2 3 tab 1 2 3 tab to-220 d(2,tab) g(1) s(3) am01476v1 table 1. device summary order codes marking package packaging stf4n62k3 stfi4n62k3 sti4n62k3 stp4n62k3 STU4N62K3 4n62k3 to-220fp i2pakfp i2pak to-220 ipak tu b e www.st.com
contents stf4n62k3, stfi4n62k3, sti4n62k3, stp4n62k3, STU4N62K3 2/19 doc id 17548 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
stf4n62k3, stfi4n62k3, sti4n62k3, stp4n62k3, STU4N62K3 electrical ratings doc id 17548 rev 4 3/19 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220fp i2pakfp i2pak to-220 ipak v ds drain-source voltage 620 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 3.8 (1) 1. limited by maximum junction temperature. 3.8 a i d drain current (continuous) at t c = 100 c 2 (1) 2a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 15.2 (1) 15.2 a p tot total dissipation at t c = 25 c 25 70 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 3.8 a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50v) 115 mj esd gate-source human body model (r = 1.5 k ? , c = 100 pf) 2.5 kv dv/dt (3) 3. i sd 3.8 a, di/dt = 400 a/s, v dd = 80% v (br)dss , v ds peak v (br)dss. peak diode recovery voltage slope 12 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-220fp i2pakfp i2pak to-220 ipak r thj-case thermal resistance junction-case max 5 1.79 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w
electrical characteristics stf4n62k3, stfi4n62k3, sti4n62k3, stp4n62k3, STU4N62K3 4/19 doc id 17548 rev 4 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 620 v i dss zero gate voltage drain current (v gs = 0) v ds = 620 v v ds = 620v, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.75 4.5 v r ds(on static drain-source on resistance v gs = 10 v, i d = 1.9 a 1.7 2 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 550 42 7 pf pf pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v ds = 0 to 496 v, v gs = 0 27 pf r g intrinsic gate resistance f = 1 mhz open drain 2 5 10 ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 496 v, i d = 3.8 a, v gs = 10 v (see figure 20 ) 22 4 13 nc nc nc
stf4n62k3, stfi4n62k3, sti4n62k3, stp4n62k3, STU4N62K3 electrical characteristics doc id 17548 rev 4 5/19 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 300 v, i d = 1.9 a, r g = 4.7 ?, v gs = 10 v (see figure 19 ) - 10 9 29 19 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 3.8 15.2 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 3.8 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 3.8 a, di/dt = 100 a/s v dd = 60 v (see figure 24 ) - 220 1.4 13 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 3.8 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 24 ) - 270 1.9 14 ns c a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage (id = 0) igs= 1 ma 30 - v
electrical characteristics stf4n62k3, stfi4n62k3, sti4n62k3, stp4n62k3, STU4N62K3 6/19 doc id 17548 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220, i2pak figure 3. thermal impedance for to-220, i2pak figure 4. safe operating area for to-220fp, i2pakfp figure 5. thermal impedance for to-220fp, i2pakfp figure 6. safe operating area for ipak figure 7. thermal impedance for ipak i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am07172v1 i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am07174v1 i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am0717 3 v1
stf4n62k3, stfi4n62k3, sti4n62k3, stp4n62k3, STU4N62K3 electrical characteristics doc id 17548 rev 4 7/19 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 3 2 1 0 0 10 v d s (v) 20 (a) 5 15 25 4 5 5v 6v 7v v g s =10v 6 7 8 am07175v1 i d 3 2 1 0 0 4 v g s (v) 8 (a) 2 6 4 5 6 v d s =15v am07176v1 v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =496v i d = 3 . 8 a 25 12 3 00 200 100 0 400 500 v d s v d s (v) am07177v1 r d s (on) 1. 8 1.7 1.6 1.5 0 2 i d (a) ( ? ) 1 3 1.9 v g s =10v am0717 8 v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am07179v1 e o ss 1.5 1.0 0.5 0 0 100 v d s (v) ( j) 400 2.0 200 3 00 2.5 3 .0 500 600 am071 8 0v1
electrical characteristics stf4n62k3, stfi4n62k3, sti4n62k3, stp4n62k3, STU4N62K3 8/19 doc id 17548 rev 4 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. maximum avalanche energy vs starting tj figure 17. normalized b vdss vs temperature figure 18. source-drain diode forward characteristics v g s (th) 1.00 0.90 0. 8 0 0.70 -75 t j (c) (norm) -25 1.10 75 25 125 id = 50 a am071 8 1v1 r d s (on) 2.0 1.5 1.0 0.5 -75 t j (c) (norm) -25 25 75 125 2.5 vg s = 10 v id = 1.9 a am071 8 2v1 e a s 0 40 t j (c) (mj) 20 100 60 8 0 0 10 20 3 0 40 120 140 50 60 70 8 0 100 110 120 i d = 3 . 8 a v dd =50 v 90 am071 8 4v1 bv d ss -75 t j (c) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 id = 1 ma am071 83 v1 v s d 0 2 i s d (a) (v) 1 5 3 4 0.1 0.2 0. 3 0.4 0.5 0.6 0.7 t j =25c t j =150c t j =-50c 0. 8 0.9 1.0 am0 8888 v1
stf4n62k3, stfi4n62k3, sti4n62k3, stp4n62k3, STU4N62K3 test circuits doc id 17548 rev 4 9/19 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive waveform figure 24. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data stf4n62k3, stfi4n62k3, sti4n62k3, stp4n62k3, STU4N62K3 10/19 doc id 17548 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
stf4n62k3, stfi4n62k3, sti4n62k3, stp4n62k3, STU4N62K3 package mechanical data doc id 17548 rev 4 11/19 figure 25. to-220fp drawing 7012510_rev_k_b
package mechanical data stf4n62k3, stfi4n62k3, sti4n62k3, stp4n62k3, STU4N62K3 12/19 doc id 17548 rev 4 table 10. i 2 pakfp (to-281) mechanical data figure 26. i 2 pakfp (to-281) drawing dim. mm min. typ. max. a4.40 - 4.60 b2.50 2.70 d2.50 2.75 d1 0.65 0.85 e0.45 0.70 f0.75 1.00 f1 1.20 g4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50 rev!
stf4n62k3, stfi4n62k3, sti4n62k3, stp4n62k3, STU4N62K3 package mechanical data doc id 17548 rev 4 13/19 figure 27. i2pak (to-262) drawing table 11. i2pak (to-262) mechanical data dim. mm. min. typ max. a 4.40 4.60 a1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 d 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 e10 10.40 l13 14 l1 3.50 3.93 l2 1.27 1.40 00049 8 2_rev_h
package mechanical data stf4n62k3, stfi4n62k3, sti4n62k3, stp4n62k3, STU4N62K3 14/19 doc id 17548 rev 4 table 12. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
stf4n62k3, stfi4n62k3, sti4n62k3, stp4n62k3, STU4N62K3 package mechanical data doc id 17548 rev 4 15/19 figure 28. to-220 type a drawing 00159 88 _typea_rev_ s
package mechanical data stf4n62k3, stfi4n62k3, sti4n62k3, stp4n62k3, STU4N62K3 16/19 doc id 17548 rev 4 table 13. ipak (to-251) mechanical data dim mm. min. typ. max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.30 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e 2.28 e1 4.40 4.60 h 16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10
stf4n62k3, stfi4n62k3, sti4n62k3, stp4n62k3, STU4N62K3 package mechanical data doc id 17548 rev 4 17/19 figure 29. ipak (to-251) drawing 006 8 771_j
revision history stf4n62k3, stfi4n62k3, sti4n62k3, stp4n62k3, STU4N62K3 18/19 doc id 17548 rev 4 5 revision history table 14. document revision history date revision changes 05-may-2010 1 first release 16-dec-2010 2 document status promoted from preliminary data to datasheet. 27-mar-2012 3 inserted max and min. values for r g in ta bl e 5 . updated section 4: package mechanical data . 07-aug-2012 4 added package, mechanical data: i2pakfp. updated table 1: device summary , table 2: absolute maximum ratings , table 3: thermal data , table 4: on /off states , table 13: ipak (to-251) mechanical data and figure 29: ipak (to-251) drawing minor text changes.
stf4n62k3, stfi4n62k3, sti4n62k3, stp4n62k3, STU4N62K3 doc id 17548 rev 4 19/19 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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