i c , nom 150 a i c 225 a min. typ. max. - 1,7 2,15 v - 2,0 - v - 400 - - c ies na eingangskapazit?t input capacitance ma i2t v r = 0v, t p = 10ms, t vj = 125c - - 1,4 - c 5 10,8 f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v c res v ge(th) v ge = -15v...+15v q g 300 a v ce = 0v, v ge = 20v, t vj = 25c i ges - v ce = 1200v, v ge = 0v, t vj = 25c i ces - - v cesat repetitive peak collector current t p = 1ms, t c = 80c t p = 1ms i frm dc forward current +/- 20 dauergleichstrom i f 150 4,6 h?chstzul?ssige werte / maximum rated values kollektor emitter sperrspannung t c = 80c kollektor dauergleichstrom collector emitter voltage elektrische eigenschaften / electrical properties t vj = 25c t c = 25c dc collector current gate emitter peak voltage 300 p tot 780 gesamt verlustleistung total power dissipation periodischer kollektor spitzenstrom t c = 25c; transistor v a v 0,5 5,8 nf nf k a2s 6,5 - transistor wechselrichter / transistor inverter collector emitter cut off current kollektor emitter reststrom reverse transfer capacitance rckwirkungskapazit?t i c = 150a, v ge = 15v, t vj = 125c f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v gateladung gate schwellenspannung gate charge grenzlastintegral i2t value v isol charakteristische werte / characteristic values isolations prfspannung insulation test voltage rms, f= 50hz, t= 1min. 5,0 approved: sm tm; wilhelm rusche i c = 6ma, v ce = v ge , t vj = 25c gate threshold voltage date of publication: 2003-02-11 prepared by: mod-d2; mark mnzer technische information / technical information ff150r12ke3 g igbt-module igbt-modules v ces a i crm 1200 v w kollektor emitter s?ttigungsspannung i c = 150a, v ge = 15v, t vj = 25c collector emitter saturation voltage repetitive peak forward current kv 2,5 v ges gate emitter spitzenspannung periodischer spitzenstrom gate emitter leakage current gate emitter reststrom revision: 3.0 1 (8) db_ff150r12ke3g_3.0 2003-02-11
technische information / technical information ff150r12ke3 g igbt-module igbt-modules min. typ. max. - 0,25 - s - 0,30 - s - 0,09 - s - 0,10 - s - 0,55 - s - 0,65 - s - 0,13 - s - 0,18 - s - 1,65 2,15 v - 1,65 - v - 105 - a - 135 - a - 15 - c - 28 - c - 7 - mj - 12 - mj - charakteristische werte / characteristic values i c = 150a, v cc = 600v kurzschlussverhalten i sc - 600 t p 10s, v ge 15v, t vj 125c i c = 150a, v cc = 600v einschaltverlustenergie pro puls turn on energy loss per pulse ausschaltverlustenergie pro puls e rec v r = 600v, v ge = -15v, t vj = 25c v r = 600v, v ge = -15v, t vj = 125c i f = 150a, -di f /dt= 1500a/s sperrverz?gerungsladung recovered charge i f = 150a, -di f /dt= 1500a/s ausschaltenergie pro puls reverse recovery energy q r 0,7 mj - mj 26 - a - nh m ? - 11 e off r cc/ee l ce - 20 - e on v ge = 15v, r g = 4,8 ? , t vj = 25c t d,off v ge = 15v, r g = 4,8 ? , t vj = 25c - t f v ge = 15v, r g = 4,8 ? , t vj = 25c v ge = 15v, r g = 4,8 ? , t vj = 125c - transistor wechselrichter / transistor inverter t d,on v f forward voltage abschaltverz?gerungszeit (induktive last) turn off delay time (inductive load) lead resistance, terminal-chip stray inductance module modulinduktivit?t anschlsse / terminals 2-3 v cc = 900v, v cemax = v ces - l ce di/dt i c = 150a, v cc = 600v, l = 80nh v ge = 15v, r g = 4,8 ? , t vj = 125c i f = 150a, v ge = 0v, t vj = 125c diode wechselrichter / diode inverter v r = 600v, v ge = -15v, t vj = 125c anstiegszeit (induktive last) rise time (inductive load) i c = 150a, v cc = 600v sc data i c = 150a, v cc = 600v v ge = 15v, r g = 4,8 ? , t vj = 125c leitungswiderstand, anschluss-chip turn off energy loss per pulse fallzeit (induktive last) fall time (inductive load) v ge = 15v, r g = 4,8 ? , t vj = 25c v ge = 15v, r g = 4,8 ? , t vj = 125c pro zweig / per arm, t c =25c i c = 150a, v cc = 600v, l = 80nh v ge = 15v, r g = 4,8 ? , t vj = 125c v r = 600v, v ge = -15v, t vj = 25c v r = 600v, v ge = -15v, t vj = 125c t r einschaltverz?gerungszeit (induktive last) turn on delay time (inductive load) v ge = 15v, r g = 4,8 ? , t vj = 125c v r = 600v, v ge = -15v, t vj = 25c i f = 150a, -di f /dt= 1500a/s durchlassspannung charakteristische werte / characteristic values i f = 150a, v ge = 0v, t vj = 25c rckstromspitze peak reverse recovery current i rm 2 (8) db_ff150r12ke3g_3.0 2003-02-11
technische information / technical information ff150r12ke3 g igbt-module igbt-modules - - 0,16 k/w - - 0,30 k/w terminal connection torque anzugsdrehmoment, elektr. anschlsse anschlsse / terminals m6 schraube m6 / screw m6 anzugsdrehmoment, mech. befestigung mounting torque -40 150 innerer w?rmewiderstand; dc thermal resistance, junction to case; dc transistor wechelr. / transistor inverter diode wechselrichter / diode inverter mechanische eigenschaften / mechanical properties maximum junction temperature r thjc c k/w - 0,01 al 2 o 3 - - 125 c c - mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid with the belonging technical notes. innere isolation case, see appendix 3,0 weight g gewicht - m g 6,0 nm nm 5,0 340 m 2,5 - 11 cti h?chstzul?ssige sperrschichttemp. t stg comperative tracking index storage temperature clearance distance luftstrecke creepage distance kriechstrecke bergangs w?rmewiderstand betriebstemperatur geh?use, siehe anlage internal insulation operation temperature t vj max lagertemperatur pro modul / per module paste = 1w/m*k / grease = 1w/m*k thermische eigenschaften / thermal properties r thck thermal resistance, case to heatsink - 425 125 mm t vj op 20 mm -40 - 3 (8) db_ff150r12ke3g_3.0 2003-02-11
technische information / technical information ff150r12ke3 g igbt-module igbt-modules ausgangskennlinie (typisch) i c = f(v ce ) output characteristic (typical) t v j = 125c output characteristic (typical) v ge = 15v a usgangs k enn li n i en f e ld (t yp i sc h) i c = f(v ce ) 0 30 60 90 120 150 180 210 240 270 300 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 v ce [v] i c [a] tvj = 25c tvj = 125c 0 30 60 90 120 150 180 210 240 270 300 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 v ce [v] i c [a] vge=19v vge=17v vge=15v vge=13v vge=11v vge=9v 4 (8) db_ff150r12ke3g_3.0 2003-02-11
technische information / technical information ff150r12ke3 g igbt-module igbt-modules transfer characteristic (typical) i c = f(v ge ) v ce = 20v durchlasskennlinie der inversdiode (typisch) i f = f(v f ) bertragungscharakteristik (typisch) forward caracteristic of inverse diode (typical) 0 30 60 90 120 150 180 210 240 270 300 5678910111213 v ge [v] i c [a] tvj = 25c tvj = 125c 0 30 60 90 120 150 180 210 240 270 300 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 v f [v] i f [a] tvj = 25c tvj = 125c 5 (8) db_ff150r12ke3g_3.0 2003-02-11
technische information / technical information ff150r12ke3 g igbt-module igbt-modules e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) v ge =15v, i c =150a, v ce =600v, t vj =125c s c h a lt ver l us t e (t yp i sc h) switching losses (typical) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) v ge =15v, r g =4,8 ? , v ce =600v, t vj =125c s c h a lt ver l us t e (t yp i sc h) switching losses (typical) 0 10 20 30 40 50 60 0 30 60 90 120 150 180 210 240 270 300 i c [a] e [mj] eon eoff erec 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 45 50 r g [ ? ] e [mj] eon eoff erec 6 (8) db_ff150r12ke3g_3.0 2003-02-11
technische information / technical information ff150r12ke3 g igbt-module igbt-modules 67,25 6,499e-02 transienter w?rmewiderstand transient thermal impedance 1 z thjc = f (t) 3 2 reverse bias safe operation area (rbsoa) v ge =15v, t vj =125c, r g =4,8 ? i r i [k/kw] : igbt i [s] : igbt r i [k/kw] : diode i [s] : diode 17,04 4 2,601e-02 151,32 2,601e-02 sicherer arbeitsbereich (rbsoa) 125,97 6,499e-02 2,364e-03 9,11 2,364e-03 3,04 1,187e-05 5,67 1,187e-05 80,60 0,01 0,1 1 0,001 0,01 0,1 1 10 t [s] z thjc [k/w] zth : igbt zth : diode 0 50 100 150 200 250 300 350 0 200 400 600 800 1000 1200 1400 v ce [v] i c [a] ic,chip ic,modul 7 (8) db_ff150r12ke3g_3.0 2003-02-11
technische information / technical information ff150r12ke3 g igbt-module igbt-modules geh?usema?e / schaltbild package outline / circuit diagram 8 (8) db_ff150r12ke3g_3.0 2003-02-11
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