features broadband performance low insertion loss; 1.6db typ at 2ghz ultra low dc power consumption fast switching speed; 3ns typical description the P35-4230-000-200 is a high performance gallium arsenide single pole single throw broadband rf switch mmic. it is suitable for use in broadband communications and instrumentation applications. a 50 w termination is presented at the isolated output of the switch. control is effected by the application of complimentary 0v and -5v levels to the control lines in accordance with the truth table below. this die is fabricated using moc's 0.5 m m gate length mesfet process (s20) and is fully protected using silicon nitride passivation for excellent performance and reliability. this device is also available packaged in a ceramic package. electrical performance ambient temperature = 223c , z o = 50 w , control voltages = 0v/-5v unless otherwise stated notes 1. return loss measured in low loss switch state. 2. input power at which insertion loss compresses by 1db. gaas mmic spst terminated switch, dc - 4ghz P35-4230-000-200 marconi optical components parameter conditions min typ max units insertion loss dc - 2ghz - 1.6 1.8 db 2 - 4ghz - 2.1 2.9 db isolation dc - 2ghz 30 35 - db 2 - 4ghz 25 30 - db input return loss1 dc - 2ghz 15 16 - db 2 - 4ghz 12 14 - db output return loss1 dc - 2ghz 15 16 - db 2 - 4ghz 12 14 - db 1db power compression point2 0/-5v control; 2ghz - 23 - dbm 0/-8v control; 2ghz - 30 - dbm switching speed 50% control to 10%90%rf - 3 - ns
typical performance at 22c absolute maximum ratings max control voltage -8v max i/p power +33 dbm operating temperature -60c to +125c storage temperature -65c to +150c insertion loss isolation input return loss output return loss
P35-4230-000-200 marconi optical components package outline electrical schematic switching truth table die size 0.82 x 0.69mm bond pad size 100 m m x 100 m m die thickness: 210 m m a b rf in-rf out -5v 0v isolated -5v 0v isolated chip handling, mounting and bonding the back of the chip is gold metallized and can be die-attached manually onto gold, eutectically with au-sn (80:20) or with low temperature conductive epoxy. the maximum allowable chip temperature is 310c for 2 minutes. bonds should be made onto the exposed gold pads with 17 or 25 microns pure gold, half-hard gold wire. bonding should be achieved with the chip face at 225c to 275c with a heated thermosonic wedge (approx. 125c) and a maximum force of 60 grams. ball bonds may be used but care must be taken to ensure the ball size is compatible with the bonding pads shown. the length of the bond wires should be minimised to reduce parasitic inductance, particularly those to the rf and ground pads.
the data and product specifications are subject to change without notice. these devices should not be used for device qualification and production without prior notice. ? marconi optical components ltd 2001 www.moc.marconi.com moc, caswell, towcester, northants, nn12 8eq, tel:+44 1327 356468 fax +44 1327 356698 462/sm/01745/200 iss 1/2 ordering information: P35-4230-000-200
|
