2006. 10. 10 1/4 semiconductor technical data KTC5706 epitaxial planar npn transistor revision no : 0 dc-dc converters relay drivers, lamp drivers, motor drivers, strobes application. features adoption of fbet, mbit processes. high current capacitance. low collector-to-emitter saturation voltage. high-speed switching. ultra small package facilitates miniaturization in end products. high allowable power dissipation. maximum rating (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo 80 v collector-emitter voltage v ces 80 v v ceo 50 emitter-base voltage v ebo 6 v collector current dc i c 5 a pulse i cp 7.5 base current i b 1.2 a collector power dissipation ta=25 p c 1.5 w tc=25 20 junction temperature t j 150 storage temperature range t stg -55 150 to-126 h j millimeters c e f g d a b dim a c e f g h j k m o p n l d 1. emitter 2. collector 3. base k l m n o p 8.3 max 5.8 0.7 3.2 0.1 3.5 11.0 0.3 2.9 max 1.0 max 1.9 max 0.75 0.15 2.3 0.1 0.65 0.15 1.6 3.4 max b 1 23 + _ + _ + _ 15.50 0.5 + _ + _ + _
2006. 10. 10 2/4 KTC5706 revision no : 0 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =40v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =4v, i c =0 - - 0.1 a collector-base breakdown voltage v (br)cbo i c =10 a, i e =0 80 - - v collector-emitter breakdown voltage v (br)ces i c =100 a, v be =0 80 - - v v (br)ceo i c =1ma, i b =0 50 - - v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 6 - - v collector-emitter saturation voltage v ce(sat)1 i c =1a, i b =50ma - 90 135 mv v ce(sat)2 i c =2a, i b =100ma - 160 240 mv base-emitter saturation voltage v be(sat) i c =2a, i b =100ma - 0.88 1.2 v dc current gain h fe v ce =2v, i c =500ma 200 - 560 transition frequency f t v ce =10v, i c =500ma - 400 - mhz collector output capacitance c ob v cb =10v, f=1mhz - 13 - pf switching time turn-on time t on i b1 b2 i input output 50 ? 100 f pw=20 s dc 1% 470 f r v b r be v =-5v cc v =25v 10i =-10i =i =1a b1 b2 c < = 25 ? - 35 - ns storage time t stg - 300 - fall time t f - 20 -
2006. 10. 10 3/4 KTC5706 revision no : 0 h fe - i c collector current i c (a) dc current gain h fe 0.1 10 0.01 1.0 10 100 1000 base-emitter saturation voltage v be(sat) (v) collector current i c (a) 0.1 v be(sat) -i c collector- emitter voltage v ce (v) 0 0 1.0 i c - v ce 1 2 3 4 5 0.8 0.4 1.4 1.2 collector-base voltage v cb (v) c ob -v cb 1 0.1 1.0 10 100 f=1mhz 100 500 10 collector output capacitance c ob (pf) collector current i c (a) 0.01 0.1 10 v ce(sat) - i c 110 0.01 0.1 1 1.0 10 10 100 1000 10000 i c - v be base-emitter voltage v be (v) 0 collector current i c (a) collector current i c (a) 0 0.2 0.4 0.6 0.8 1.4 1.2 1.0 1 2 3 0.5 1.5 2.5 4 3.5 i b = 0ma 5ma 10ma 100ma 60ma 20ma 30ma 40ma 80ma 90ma 70ma 50ma collector- emitter saturation voltage v ce (sat) (mv) ta=75 c ta=75 c 25 c -25 c 25 c -25 c ta=75 c 25 c -25 c ta=75 c 25 c -25 c i c /i b = 50 i c /i b = 50 v ce =2v v ce =2v
2006. 10. 10 4/4 KTC5706 revision no : 0 collector power dissipation p c (w) 0 0 c p - t a safe operating area collector-emitter voltage v ce (v) 0.01 collector current i c (a) 0.1 1 10 0.1 1 10 100 20 40 60 80 160 100 120 140 0.3 0.6 0.9 1.5 1.2 ambient temperature ta ( c) collector power dissipation p c (w) p c - t c case temperature t c ( c) collector-emitter saturation voltage v ce(sat) (mv) collector current i c (a) collector current i c (a) v ce(sat) - i c 0.1 0.01 10 110 1000 100 i c /i b = 20 transition frequency f t (mhz) 0.01 0.1 f t - i c 110 100 10 1000 v ce = 10v dc operation ( ) ta=25 c dc operation ( ) tc=25 c ta=75 c 25 c -25 c 25 c single nonrepetitive pulse t c = curves must be derated linearly with increase i cp =7.5a i c =5a 10 ms 100 s 500 s 1 ms 100 ms no heat sink 0 0 50 100 150 5 10 15 20 25
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