the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor 2sk4080 switching n-channel power mos fet data sheet document no. d18214ej2v0ds00 (2nd edition) date published march 2007 ns cp(k) printed in japan the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. description the 2sk4080 is n-channel mos fet device that featur es a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as dc/dc converter with synchronous rectifier. features ? low on-state resistance r ds(on)1 = 9.0 m max. (v gs = 10 v, i d = 24 a) ? low q gd: q gd = 6.3 nc typ. ? 4.5 v drive available absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss 30 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25c) i d(dc) 48 a drain current (pulse) note1 i d(pulse) 144 a total power dissipation (t c = 25c) p t1 29 w total power dissipation p t2 1.0 w channel temperature t ch 150 c storage temperature t stg ?55 to +150 c single avalanche current note2 i as 21 a single avalanche energy note2 e as 44.1 mj notes 1. pw 10 s, duty cycle 1% 2. starting t ch = 25c, v dd = 15 v, r g = 25 , v gs = 20 0 v, l = 100 h (to-251) (to-252) ordering information part number package 2sk4080(1)-s27-ay note to-251 (mp-3-b) 2sk4080-zk-e1-ay note to-252 (mp-3zk) 2sk4080-zk-e2-ay note to-252 (mp-3zk) note pb-free (this product does not contain pb in external electrode.) 2006
data sheet d18214ej2v0ds 2 2sk4080 electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 10 a gate leakage current i gss v gs = 20 v, v ds = 0 v 100 na gate cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 1.5 2.0 2.5 v forward transfer admittance note | y fs | v ds = 10 v, i d = 12 a 7 14 s drain to source on-state resistance note r ds(on)1 v gs = 10 v, i d = 24 a 7.0 9.0 m r ds(on)2 v gs = 4.5 v, i d = 24 a 10.2 15 m input capacitance c iss v ds = 10 v 1670 pf output capacitance c oss v gs = 0 v 290 pf reverse transfer capacitance c rss f = 1 mhz 150 pf turn-on delay time t d(on) v dd = 15 v 10 ns rise time t r i d = 30 a 5.3 ns turn-off delay time t d(off) v gs = 12 v 42 ns fall time t f r g = 3 6.1 ns total gate charge q g1 v dd = 15 v, v gs = 12 v, i d = 30 a 32 nc q g2 v dd = 15 v, v gs = 4.5 v, i d = 30 a 13 nc gate to source charge q gs v dd = 15 v 4.6 nc gate to drain charge q gd i d = 30 a 6.3 nc gate resistance r g 2.4 body diode forward voltage note v f(s-d) i f = 30 a, v gs = 0 v 0.94 1.5 v reverse recovery time t rr i f = 30 a, v gs = 0 v 29 ns reverse recovery charge q rr di/dt = 100 a/ s 23 nc note pulsed test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cycle 1% v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
data sheet d18214ej2v0ds 3 2sk4080 typical characteristics (t a = 25c) derating factor of forward bias safe operating area total power dissipation vs. case temperature dt - percentage of rated power - % 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t c - case temperature - c p t - total power dissipation - w 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 175 t c - case temperature - c forward bias safe operating area drain current vs. case temperature i d - drain current - a 0.1 1 10 100 1000 0.1 1 10 100 i d(pulse) r ds(on) limited (at v gs = 10 v) power dissipation limited i d(dc) 1 ms 100 s 10 ms t c = 25c single pulse v ds - drain to source voltage - v i d - drain current - a 0 10 20 30 40 50 60 0 25 50 75 100 125 150 t c - case temperature - c transient thermal resistance vs. pulse width r th(ch-a) - transient thermal resistance - c/w 0.1 1 10 100 1000 r th(ch-a) = 125c/w r th(ch-c) = 4.3c/w single pulse pw - pulse width - s 100 1 m 10 m 100 m 1 10 100 1000
data sheet d18214ej2v0ds 4 2sk4080 drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 50 100 150 200 0 0.5 1 1.5 2 2.5 3 v gs = 10 v pulsed 4.5 v v ds - drain to source voltage - v i d - drain current - a 0.01 0.1 1 10 100 012345 v ds = 10 v pulsed t ch = ? 55c ? 25c 25c 75c 125c 150c v gs - gate to source voltage - v gate cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) - gate cut-off voltage - v 0 0.5 1 1.5 2 2.5 3 -75 -25 25 75 125 175 v ds = 10 v i d = 1 ma t ch - channel temperature - c | y fs | - forward transfer admittance - s 0.1 1 10 100 0.1 1 10 100 v ds = 10 v pulsed tch = 150c 125c 75c 25c ? 25c ? 55c i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-stateresistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 5 10 15 20 1 10 100 1000 10 v pulsed v gs = 4.5 v i d - drain current - a r ds(on) - drain to source on-state resistance - m 0 5 10 15 20 25 30 0 5 10 15 20 pulsed i d = 48 a 24 a 9.6 a v gs - gate to source voltage - v
data sheet d18214ej2v0ds 5 2sk4080 drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m 0 5 10 15 20 25 -75 -25 25 75 125 175 10 v v gs = 4.5 v i d = 24 a pulsed t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 10 100 1000 10000 0.1 1 10 100 v gs = 0 v f = 1 mhz c iss c oss c rss v ds - drain to source voltage - v switching characteristics dynamic input/output characteristics t d(on) , t r , t d(off) , t f - switching time - ns 1 10 100 0.1 1 10 100 t r t d(off) t d(on) t f v dd = 15 v v gs = 12 v r g = 3 i d - drain current - a v ds - drain to source voltage - v 0 5 10 15 20 25 30 0 10203040 0 2 4 6 8 10 12 v ds i d = 30 a v gs v dd = 24 v 15 v 6 v q g - gate chage - nc v gs - gate to source voltage - v source to drain diode forward voltage revwese recovery time vs. drain current i f - diode forward current - a 0.01 0.1 1 10 100 1000 00.511.5 v gs = 10 v 0 v pulsed 4.5 v v f(s-d) - source to drain voltage - v t rr - reverse recovery time - ns 1 10 100 1000 0.1 1 10 100 di/dt = 100 a/ s v gs = 0 v i d - drain current - a
data sheet d18214ej2v0ds 6 2sk4080 single avalanche current vs. inductive load single avalanche energy derating factor i as - single avalanche current - a 1 10 100 0.01 0.1 1 10 e as = 44.1 mj i as = 21 a v dd = 15 v v gs = 20 0 v r g = 25 starting tch = 25c l - inductive load - mh energy derating factor - % 0 20 40 60 80 100 120 25 50 75 100 125 150 v dd = 15 v r g = 25 v gs = 20 0 v i as 21 a starting t ch - starting channel temperature - c
data sheet d18214ej2v0ds 7 2sk4080 package drawings (unit: mm) 1) to-251 (mp-3-b) 2) to-252 (mp-3zk) 1.gate 2.drain 3.source 4.fin (drain) 6.60.2 2.30.1 0.50.1 0.760.12 0.50.1 5.3 typ. 2.3 typ. 2.3 typ. 1.14 max. 1.06 typ. 11.25 typ. 4.13 typ. 1.04 typ. 6.10.2 1.10.13 2 13 4 6.5 0.2 2.3 0.1 0.5 0.1 0.76 0.12 0 to 0.25 0.5 0.1 1.0 no plating no plating 5.1 typ. 1.0 typ. 6.1 0.2 0.51 min. 4.0 min . 0.8 10.4 max. (9.8 typ.) 4.3 min. 1 4 23 1.14 max. 2.3 2.3 1. gate 2. drain 3. source 4. fin (drain) equivalent circuit source body diode gate drain remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protecti on circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
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