features trenchfet power mosfet pwm optimized for fast switching in small footprint 100% r g tested applications primary side switch for low power dc/dc converters si3440dv vishay siliconix new product document number: 72380 s-31919?rev. a, 15-sep-03 www.vishay.com 1 n-channel 150-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 150 0.375 @ v gs = 10 v 1.5 1 5 0 0.400 @ v gs = 6.0 v 1.4 (1, 2, 5, 6) d (3) g (4) s n-channel mosfet tsop-6 top view 6 4 1 2 3 5 2.85 mm 3 mm ordering information: SI3440DV-T1 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 secs steady state unit drain-source voltage v ds 150 v gate-source voltage v gs 20 v continuous drain current (t j = 175 c) a t a = 25 c i d 1.5 1.2 continuous drain current (t j = 175 c) a t a = 85 c i d 1.1 0.8 a pulsed drain current i dm 6 a single a valanche current l = 0 1 mh i as 4 single a valanche energy (duty cycle 1%) l = 0.1 mh e as 0.8 mj continuous source current (diode conduction) a i s 1.7 1.0 a maximum power dissipation a t a = 25 c p d 2.0 1.14 w maximum power dissipation a t a = 85 c p d 1.0 0.59 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 5 sec r 45 62.5 maximum junction-to-ambient a steady state r thja 90 110 c/w maximum junction-to-foot (drain) steady state r thjf 25 30 c/w notes a. surface mounted on 1? x 1? fr4 board.
si3440dv vishay siliconix new product www.vishay.com 2 document number: 72380 s-31919?rev. a, 15-sep-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2 4 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 150 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 150 v, v gs = 0 v, t j = 85 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 4 a drain - source on - state resistance a r ds(on) v gs = 10 v, i d = 1.5 a 0.310 0.375 d ra i n- s ource o n- st a t e r es i s t ance a r ds(on) v gs = 6.0 v, i d = 1.4 a 0.330 0.400 forward transconductance a g fs v ds = 15 v, i d = 1.5 a 4.1 s diode forward voltage a v sd i s = 1.7 a, v gs = 0 v 0.8 1.2 v dynamic b total gate charge q g 5.4 8 gate-source charge q gs v ds = 75 v, v gs = 10 v, i d = 1.5 a 1.1 nc gate-drain charge q gd 1.9 gate resistance r g f = 1 mhz 4 9 15 turn-on delay time t d(on) 8 15 rise time t r v dd = 75 v, r l = 75 10 15 ns turn-off delay time t d(off) v dd = 75 v , r l = 75 i d 1 a, v gen = 10 v, r g = 6 20 30 ns fall time t f 15 25 source-drain reverse recovery time t rr i f = 1.7 a, di/dt = 100 a/ s 40 60 ns notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = 10 thru 5 v t c = 125 c -55 c 4 v 25 c output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 3 v
si3440dv vishay siliconix new product document number: 72380 s-31919?rev. a, 15-sep-03 www.vishay.com 3 typical characteristics (25 c unless noted) - on-resistance ( r ds(on) ) 0 80 160 240 320 0 1020304050607080 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 0 2 4 6 8 10 0123456 0.0 0.1 0.2 0.3 0.4 0.5 01234 v ds - drain-to-source voltage (v) c rss c oss c iss v ds = 75 v i d = 1.5 a i d - drain current (a) v gs = 10 v i d = 1.5 a v gs = 10 v v gs = 6.0 v gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) c - capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.2 0.4 0.6 0.8 1.0 0246810 t j = 150 c t j = 25 c i d = 1.5 a 10 1 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s
si3440dv vishay siliconix new product www.vishay.com 4 document number: 72380 s-31919?rev. a, 15-sep-03 typical characteristics (25 c unless noted) 0 15 30 5 10 power (w) single pulse power time (sec) 10 -3 10 -2 1 10 600 10 -1 10 -4 100 - 1.2 - 0.8 - 0.4 0.0 0.4 0.8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold v oltage variance (v) v gs(th) t j - temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 90 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 1 600 10 20 0.1 0.01 100 25 safe operating area v ds - drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 t a = 25 c single pulse - drain current (a) i d 0.1 i d(on) limited r ds(on) limited bv dss limited p(t) = 10 i dm limited dc p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001 p(t) = 0.0001
si3440dv vishay siliconix new product document number: 72380 s-31919?rev. a, 15-sep-03 www.vishay.com 5 typical characteristics (25 c unless noted) 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance
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