tzx... telefunken semiconductors rev. a1, 10-mar-97 1 (8) silicon epitaxial planar zdiodes features very sharp reverse characteristic low reverse current level very high stability low noise available with tighter tolerances applications voltage stabilization 94 9367 absolute maximum ratings t j = 25 c parameter test conditions type symbol value unit power dissipation l=4mm, t l =25 c p v 500 mw zcurrent i z p v /v z ma junction temperature t j 175 c storage temperature range t stg 65...+175 c maximum thermal resistance t j = 25 c parameter test conditions symbol value unit junction ambient l=4mm, t l =constant r thja 300 k/w characteristics t j = 25 c parameter test conditions type symbol min typ max unit forward voltage i f =200ma v f 1.5 v
tzx... telefunken semiconductors rev. a1, 10-mar-97 2 (8) type v zmin. (v) v zmax. (v) type v zmin. (v) v zmax. (v) r zmax. ) at i z (ma) i rmax. ( a) at v r (v) tzx2v4 23 26 tzx2v4 - a 2.3 2.5 100 5 5 05 tzx2v4 2 . 3 2 . 6 tzx2v4 - b 2.4 2.6 100 5 5 0 . 5 tzx2v7 - a 2.5 2.7 tzx2v7 2.5 2.9 tzx2v7 - b 2.6 2.8 100 5 5 0.5 tzx2v7 - c 2.7 2.9 tzx3v0 - a 2.8 3.0 tzx3v0 2.8 3.2 tzx3v0 - b 2.9 3.1 100 5 5 0.5 tzx3v0 - c 3.0 3.2 tzx3v3 - a 3.1 3.3 tzx3v3 3.1 3.5 tzx3v3 - b 3.2 3.4 100 5 5 1 tzx3v3 - c 3.3 3.5 tzx3v6 - a 3.4 3.6 tzx3v6 3.4 3.8 tzx3v6 - b 3.5 3.7 100 5 5 1 tzx3v6 - c 3.6 3.8 tzx3v9 - a 3.7 3.9 tzx3v9 3.7 4.1 tzx3v9 - b 3.8 4.0 100 5 5 1 tzx3v9 - c 3.9 4.1 tzx4v3 - a 4.0 4.2 tzx4v3 40 45 tzx4v3 - b 4.1 4.3 100 5 5 15 tzx4v3 4 . 0 4 . 5 tzx4v3 - c 4.2 4.4 100 5 5 1 . 5 tzx4v3 - d 4.3 4.5 tzx4v7 - a 4.4 4.6 tzx4v7 44 49 tzx4v7 - b 4.5 4.7 100 5 5 2 tzx4v7 4 . 4 4 . 9 tzx4v7 - c 4.6 4.8 100 5 5 2 tzx4v7 - d 4.7 4.9 tzx5v1 - a 4.8 5.0 tzx5v1 48 53 tzx5v1 - b 4.9 5.1 100 5 5 2 tzx5v1 4 . 8 5 . 3 tzx5v1 - c 5.0 5.2 100 5 5 2 tzx5v1 - d 5.1 5.3 tzx5v6 - a 5.2 5.5 tzx5v6 - b 5.3 5.6 tzx5v6 5.2 5.9 tzx5v6 - c 5.4 5.7 40 5 5 2 tzx5v6 - d 5.5 5.8 tzx5v6 - e 5.6 5.9 tzx6v2 - a 5.7 6.0 tzx6v2 - b 5.9 6.1 tzx6v2 5.7 6.6 tzx6v2 - c 6.0 6.3 15 5 1 3 tzx6v2 - d 6.1 6.4 tzx6v2 - e 6.3 6.6
tzx... telefunken semiconductors rev. a1, 10-mar-97 3 (8) type v zmin. (v) v zmax. (v) type v zmin. (v) v zmax. (v) r zmax. ) at i z (ma) i rmax. ( a) at v r (v) tzx6v8 - a 6.4 6.7 tzx6v8 64 72 tzx6v8 - b 6.6 6.9 15 5 1 35 tzx6v8 6 . 4 7 . 2 tzx6v8 - c 6.7 7.0 15 5 1 3 . 5 tzx6v8 - d 6.9 7.2 tzx7v5 - a 7.0 7.3 tzx7v5 70 79 tzx7v5 - b 7.2 7.6 15 5 1 50 tzx7v5 7 . 0 7 . 9 tzx7v5 - c 7.3 7.7 15 5 1 5 . 0 tzx7v5 - d 7.5 7.9 tzx8v2 - a 7.7 8.1 tzx8v2 77 87 tzx8v2 - b 7.9 8.3 20 5 1 62 tzx8v2 7 . 7 8 . 7 tzx8v2 - c 8.1 8.5 20 5 1 6 . 2 tzx8v2 - d 8.3 8.7 tzx9v1 - a 8.5 8.9 tzx9v1 - b 8.7 9.1 tzx9v1 8.5 9.7 tzx9v1 - c 8.9 9.3 20 5 1 6.8 tzx9v1 - d 9.1 9.5 tzx9v1 - e 9.3 9.7 tzx10 - a 9.5 9.9 tzx10 95 10 6 tzx10 - b 9.7 10.1 25 5 1 75 tzx10 9 . 5 10 . 6 tzx10 - c 9.9 10.3 25 5 1 7 . 5 tzx10 - d 10.2 10.6 tzx11 - a 10.4 10.8 tzx11 10 4 11 6 tzx11 - b 10.7 11.1 25 5 1 82 tzx11 10 . 4 11 . 6 tzx11 - c 10.9 11.3 25 5 1 8 . 2 tzx11 - d 11.1 11.6 tzx12 - a 11.4 11.9 tzx12 11 4 12 7 tzx12 - b 11.6 12.1 35 5 1 95 tzx12 11 . 4 12 . 7 tzx12 - c 11.9 12.4 35 5 1 9 . 5 tzx12 - d 12.2 12.7 tzx13 - a 12.4 12.9 tzx13 12.4 13.4 tzx13 - b 12.6 13.1 35 5 1 10 tzx13 - c 12.9 13.4 tzx14 - a 13.2 13.7 tzx14 13.2 14.3 tzx14 - b 13.5 14.0 35 5 1 11 tzx14 - c 13.8 14.3 tzx15 - a 14.1 14.7 tzx15 14.1 15.5 tzx15 - b 14.5 15.1 40 5 1 11.5 tzx15 - c 14.9 15.5 tzx16 - a 15.3 15.9 tzx16 15.3 17.1 tzx16 - b 15.7 16.5 45 5 1 12 tzx16 - c 16.3 17.1
tzx... telefunken semiconductors rev. a1, 10-mar-97 4 (8) type v zmin. (v) v zmax. (v) type v zmin. (v) v zmax. (v) r zmax. ) at i z (ma) i rmax. ( a) at v r (v) tzx18 - a 16.9 17.7 tzx18 16.9 19.0 tzx18 - b 17.5 18.3 55 5 1 13 tzx18 - c 18.1 19.0 tzx20 - a 18.8 19.7 tzx20 18.8 21.2 tzx20 - b 19.5 20.4 60 2 1 15 tzx20 - c 20.2 21.2 tzx22 - a 20.9 21.9 tzx22 20.9 23.3 tzx22 - b 21.6 22.6 65 2 1 17 tzx22 - c 22.3 23.3 tzx24 - a 22.9 24.0 tzx24 22.9 25.5 tzx24 - b 23.6 24.7 70 2 1 19 tzx24 - c 24.3 25.5 tzx27 - a 25.2 26.6 tzx27 25.2 28.6 tzx27 - b 26.2 27.6 80 2 1 21 tzx27 - c 27.2 28.6 tzx30 - a 28.2 29.6 tzx30 28.2 31.6 tzx30 - b 29.2 30.6 100 2 1 23 tzx30 - c 30.2 31.6 tzx33 - a 31.2 32.6 tzx33 31.2 34.5 tzx33 - b 32.2 33.6 120 2 1 25 tzx33 - c 33.2 34.5 tzx36 - a 34.2 35.7 tzx36 34.2 38.0 tzx36 - b 35.3 36.8 140 2 1 27 tzx36 - c 26.4 38.0
tzx... telefunken semiconductors rev. a1, 10-mar-97 5 (8) typical characteristics (t j = 25 c unless otherwise specified) 95 9611 0 5 10 15 0 100 200 300 400 500 20 r therm. resist. junction / ambient ( k/w ) thja l lead length ( mm ) ll t l =constant figure 1. thermal resistance vs. lead length 0 40 80 120 160 0 100 300 400 500 600 p total power dissipation ( mw ) tot t amb ambient temperature ( c ) 200 95 9602 200 figure 2. total power dissipation vs. ambient temperature 0 5 10 15 20 1 10 100 1000 v voltage change ( mv ) z v z z-voltage ( v ) 25 95 9598 i z =5ma t j =25 c figure 3. typical change of working voltage under operating conditions at t amb =25 c 60 0 60 120 180 0.8 0.9 1.0 1.1 1.2 1.3 v relative voltage change ztn t j junction temperature ( c ) 240 95 9599 v ztn =v zt /v z (25 c) tk vz =10 10 4 /k 8 10 4 /k 4 10 4 /k 6 10 4 /k 4 10 4 /k 2 10 4 /k 2 10 4 /k 0 figure 4. typical change of working voltage vs. junction temperature 0102030 5 0 5 10 15 tk temperature coefficient of v ( 10 /k ) vz v z z-voltage ( v ) 50 95 9600 40 z 4 i z =5ma figure 5. temperature coefficient of vz vs. zvoltage 0 5 10 15 0 50 100 150 200 c diode capacitance ( pf ) d v z z-voltage ( v ) 25 95 9601 20 t j =25 c v r =2v figure 6. diode capacitance vs. zvoltage
tzx... telefunken semiconductors rev. a1, 10-mar-97 6 (8) 0 0.2 0.4 0.6 0.8 0.001 0.01 0.1 1 10 100 1.0 95 9605 i forward current ( ma ) f v f forward voltage ( v ) t j =25 c figure 7. forward current vs. forward voltage 04 8 1216 20 95 9604 0 20 40 60 80 100 i z-current ( ma ) z v z z-voltage ( v ) p tot =500mw t amb =25 c figure 8. zcurrent vs. zvoltage 15 20 25 30 0 10 20 30 40 50 i z-current ( ma ) z v z z-voltage ( v ) 35 95 9607 p tot =500mw t amb =25 c figure 9. zcurrent vs. zvoltage 0 5 10 15 20 1 10 100 1000 r differential z-resistance ( ) z v z z-voltage ( v ) 25 95 9606 t j =25 c i z =1ma 5ma 10ma figure 10. differential zresistance vs. zvoltage 1 10 100 1000 z thermal resistance for pulse cond. (k/w) thp t p pulse length ( ms ) 95 9603 10 1 10 0 10 1 10 2 t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 t p /t=0.02 t p /t=0.01 single pulse r thja =300k/w t=t jmax t amb i zm =(v z +(v z 2 +4r zj t/z thp ) 1/2 )/(2r zj ) figure 11. thermal response
tzx... telefunken semiconductors rev. a1, 10-mar-97 7 (8) dimensions in mm cathode identification ? 1.7 max. ? 0.55 max. 3.9 max. 26 min. technical drawings according to din specifications 94 9366 standard glass case 54 a 2 din 41880 jedec do 35 weight max. 0.3 g 26 min.
tzx... telefunken semiconductors rev. a1, 10-mar-97 8 (8) ozone depleting substances policy statement it is the policy of temic telefunken microelectronic gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss). the montreal protocol ( 1987) and its london amendments ( 1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. temic telefunken microelectronic gmbh semiconductor division has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. temic can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice . parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use temic products for any unintended or unauthorized application, the buyer shall indemnify temic against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. temic telefunken microelectronic gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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