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tc1072/1073-2 1/28/00 telcom semiconductor reserves the right to make changes in the circuitry and specifications ot its devices. tc1072 tc1073 evaluation kit available features zero ground current for longer battery life! very low dropout voltage guaranteed 50ma and 100ma output (tc1072, tc1073, respectively high output voltage accuracy standard or custom output voltages power-saving shutdown mode error ouput can be used as a low battery detector, or processor reset generator bypass input for ultra-quiet operation over-current and over-temperature protection space-saving 6-pin sot-23a package pin compatible upgrades for bipolar regulators applications battery operated systems portable computers medical instruments instrumentation cellular / gsm / phs phones linear post-regulator for smps pagers 50ma and 100ma cmos ldos with shutdown, error output, and v ref bypass typical application general description the tc1072 and tc1073 are high accuracy (typically 0.5%) cmos upgrade for older (bipolar) low dropout regulators. designed specifically for battery-operated sys- tems, the devices?cmos construction eliminates wasted ground current, significantly extending battery life. total supply current is typically 50 a at full load ( 20 to 60 times lower than in bipolar regulators !). the devices?key features include ultra low noise opera- tion (plus optional bypass input); very low dropout voltage (typically 85mv,tc1072 and 180mv,tc1073 at full load) and fast response to step changes in load. an error output (error) is asserted when the devices are out-of-regula- tion (due to a low input voltage or excessive output current). error can be used as a low battery warning or as a processor reset signal (with the addition of an external rc network). supply current is reduced to 0.5 a (max), and both v out and error are disabled when the shutdown input is low. the devices incorporate both over-temperature and over-current protection. the tc1072 and tc1073 are stable with an output capacitor of only 1 f and have a maximum output current of 50ma. for higher output current versions, please see the tc1185, tc1186, tc1187 (i out = 150ma) and tc1107, tc1108, and tc1173 (i out = 300ma) data sheets. 1 f shutdown control (from power control logic) tc1072 tc1073 v in 1 1m 2 3 4 6 5 v in v out error bypass c bypass 470pf shdn gnd v out error pin configuration note: *6-pin sot-23a is equivalent to the eiaj (sc-74a) tc1072 tc1073 (6-pin sot-23a*) top view 1 3 5 4 6 2 shdn error gnd v out bypass v in ordering information part junction number package temp. range tc1072-xxvch 6-pin sot-23a* ?40 c to +125 c tc1073-xxvch 6-pin sot-23a* ?40 c to +125 c tc1015ev evaluation kit for cmos ldo family note: *6-pin sot-23a is equivalent to the eiaj (sc-74a). available output voltages: 2.5, 2.7, 2.8, 2.85, 3.0, 3.3, 3.6, 4.0, 5.0 xx indicates output voltages other output voltages are available. please contact telcom semiconductor for details.
2 tc1072/1073-2 1/28/00 tc1072 tc1073 50ma and 100ma cmos ldos with shutdown, error output and v ref bypass electrical characteristics: v in = v out + 1v, i l = 0.1ma, c l = 3.3 f, shdn > v ih , t a = 25 c, unless otherwise specified. boldface type specifications apply for junction temperatures of ?40 c to +125 c. symbol parameter test conditions min typ max units v in input operating voltage 6.0 v i out max maximum output current tc1072 50 ma tc1073 100 ma v out output voltage note 1 v r ?2.5% v r 0.5% v r + 2.5% v tc v out v out temperature coefficient note 2 20 ppm/ c 40 ? v out / ? v in line regulation (v r + 1v) < v in < 6v 0.05 0.35 % ? v out /v out load regulation i l = 0.1ma to i out max 0.5 2.0 % (note 3) v in ?v out dropout voltage (note 4) i l = 0.1ma 2 mv i l = 20ma 65 i l = 50ma 85 120 i l = 100ma (tc1073) 180 250 (note 4) i in supply current (note 8) shdn = v ih , i l = 0 50 80 a i insd shutdown supply current shdn = 0v 0.05 0.5 a psrr power supply rejection ratio f re 1 khz 64 db i out sc output short circuit current v out = 0v 300 450 ma ? v out / ? p d thermal regulation notes 5, 6 0.04 v/w t sd thermal shutdown die temperature 160 c ? t sd thermal shutdown hysteresis 10 c en output noise i l = i out max 260 nv/ hz 470pf from bypass to gnd shdn input v ih shdn input high threshold v in = 2.5v to 6.5v 45 %v in v il shdn input low threshold v in = 2.5v to 6.5v 15 %v in absolute maximum ratings* input voltage .............................................................. 6.5v output voltage .................................. (?0.3) to (v in + 0.3) power dissipation .................................. internally limited operating temperature .................... ?40 c < t j < 125 c storage temperature ............................ ?65 c to +150 c maximum voltage on any pin ........... v in + 0.3v to ?0.3v lead temperature (soldering, 10 sec.) ................ +260 c *stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability.
3 tc1072/1073-2 1/28/00 tc1072 tc1073 50ma and 100ma cmos ldos with shutdown, error output and v ref bypass pin no. (6-pin sot-23a) symbol description 1v in unregulated supply input. 2 gnd ground terminal. 3 shdn shutdown control input. the regulator is fully enabled when a logic high is applied to this input. the regulator enters shutdown when a logic low is applied to this input. during shutdown, output voltage falls to zero and supply current is reduced to 0.05 a (typical). 4 error out-of-regulation flag. (open drain output). this output goes low when v out is out-of- tolerance by approximately ?5%. 5 bypass reference bypass input. connecting a 470pf to this input further reduces output noise. 6v out regulated voltage output. electrical characteristics: v in = v out + 1v, i l = 0.1ma, c l = 3.3 f, shdn > v ih , t a = 25 c, unless otherwise noted. symbol parameter test conditions min typ max units error open drain output v in min minimum v in operating voltage 1.0 v v ol output logic low voltage 1ma flows to error 400 mv v th error threshold voltage see figure 2 0.95 x v r ? v hys error positive hysteresis note 7 50 mv notes: 1. v r is the regulator output voltage setting. v r = 2.5v, 2.7v, 2.85v, 3.0v, 3.3v, 3.6v, 4.0v, 5.0v. 2. tc v out = (v out max ? v out min ) x 10 6 v out x ? t 3. regulation is measured at a constant junction temperature using low duty cycle pulse testing. load regulation is tested ov er a load range from 0.1ma to the maximum specified output current. changes in output voltage due to heating effects are covered by the therma l regulation specification. 4. dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value . 5. thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, e xcluding load or line regulation effects. specifications are for a current pulse equal to i lmax at v in = 6v for t = 10 msec. 6. the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature an d the thermal resistance from junction-to-air (i.e. t a , t j , ja ). exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. please see thermal considerations section of this data sheet for more details. 7. hysteresis voltage is referenced by v r . 8. apply for junction temperatures of?0 c to +85 c. pin description
4 tc1072/1073-2 1/28/00 tc1072 tc1073 50ma and 100ma cmos ldos with shutdown, error output and v ref bypass detailed description the tc1072 and tc1073 are precision fixed output voltage regulators. (if an adjustable version is desired, please see the tc1070/tc1071/tc1187 data sheet.) un- like bipolar regulators, the tc1072 and tc1073? supply current does not increase with load current. in addition, v out remains stable and within regulation at very low load currents (an important consideration in rtc and cmos ram battery back-up applications). figure 1 shows a typical application circuit. the regula- tor is enabled any time the shutdown input (shdn) is at or above v ih , and shutdown (disabled) when shdn is at or below v il . shdn may be controlled by a cmos logic gate, or i/o port of a microcontroller. if the shdn input is not required, it should be connected directly to the input supply. while in shutdown, supply current decreases to 0.05 a (typical) and v out falls to zero volts and error is open- circuited. error open drain output error is driven low whenenver v out falls out of regulation by more than ?5% (typical). the condition may be caused by low input voltage, output current limiting, or thermal limiting. the error output voltage value (e.g. error = v ol at 4.75v (typ) for a 5.0v regulator and 2.85v (typ) for a 3.0v regulator). error ouput operation is shown in figure 2. note that error is active when v out falls to v th , and inac tive when v out rises above v th by v hys . as shown in figure 1, error can be used as a battery low flag, or as a processor reset signal (with the addition of timing capaci- tor c2). r1 x c2 should be chosen to maintain error below v ih of the processor reset input for at least 200 msec to allow time for the system to stabilize. pull-up resistor r1 can be tied to v out , v in or any other voltage less than (v in +0.3v). output capacitor a 1 f (min) capacitor from v out to ground is recom- mended. the output capacitor should have an effective series resistance of 5 ? or less, and a resonant frequency above 1mhz. a 1 f capacitor should be connected from v in to gnd if there is more than 10 inches of wire between the regulator and the ac filter capacitor, or if a battery is used as the power source. aluminum electrolytic or tantalum capaci- tor types can be used. (since many aluminum electrolytic capacitors freeze at approximately ?0 c, solid tantalums are recommended for applications operating below ?5 c.) when operating from sources other than batteries, supply- noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. bypass input a 470pf capacitor connected from the bypass input to ground reduces noise present on the internal reference, which in turn significantly reduces output noise. if output noise is not a concern, this input may be left unconnected. larger capacitor values may be used, but results in a longer time period to rated output voltage when power is initially applied. thermal considerations thermal shutdown integrated thermal protection circuitry shuts the regula- tor off when die temperature exceeds 160 c. the regulator remains off until the die temperature drops to approximately 150 c. power dissipation the amount of power the regulator dissipates is prima- rily a function of input and output voltage, and output current. figure 1. typical application circuit figure 2. error output operation v ih v ol error v th v out hysteresis (v hys ) 1 f c1 0.2 f c2 r1 1m v + c3, 470pf c2 required only if error is used as a processor reset signal (see text) shutdown control (to cmos logic or tie to v in if unused) battlow or reset tc1072 tc1073 v in battery bypass v out error shdn gnd v out 1 f
5 tc1072/1073-2 1/28/00 tc1072 tc1073 50ma and 100ma cmos ldos with shutdown, error output and v ref bypass the following equation is used to calculate worst case actual power dissipation: p d (v in max ? v out min ) i load max where: p d = worst case actual power dissipation v in max = maximum voltage on v in v out min = minimum regulator output voltage i load max = maximum output (load) current equation 1. the maximum allowable power dissipation (equation 2) is a function of the maximum ambient temperature (t a max ), the maximum allowable die temperature (125 c) and the thermal resistance from junction-to-air ( ja ). sot-23a-6 packag has a ja of approximately 220 c/watt when mounted on a single layer fr4 dielectric copper clad pc board. p d max = (t j max ?t a max ) ja where all terms are previously defined. equation 2. equation 1 can be used in conjunction with equation 2 to ensure regulator thermal operation is within limits. for example: given: v in max = 3.0v 5% v out min = 2.7v ?2.5% i load = 40ma t amax = 55 c find: 1. actual power dissipation 2. maximum allowable dissipation actual power dissipation: p d (v in max ? v out min ) i load max = [(3.0 x 1.05) ?(2.7 x .975)]40 x 10 ? = 20.7mw maximum allowable power dissipation: p d max = (t j max ?t a max ) ja = (125 ?55) 220 = 318mw in this example, the tc1072 dissipates a maximum of only 20.7mw; far below the allowable limit of 318mw. in a similar manner, equation 1 and equation 2 can be used to calculate maximum current and/or input voltage limits. layout considerations the primary path of heat conduction out of the package is via the package leads. therefore, layouts having a ground plane, wide traces at the pads, and wide power supply bus lines combine to lower ja and therefore in- crease the maximum allowable power dissipation limit.
6 tc1072/1073-2 1/28/00 tc1072 tc1073 50ma and 100ma cmos ldos with shutdown, error output and v ref bypass ground current vs.v in (v out = 3.3v) 0 10 20 30 40 50 60 70 80 90 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 v in (v) gnd current ( a) i load = 10ma c in = 1 f c out = 1 f typical characteristics: (unless otherwise specified, all parts are measured at temperature = 25 c) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 dropout voltage vs. temperature (v out = 3.3v) 0.000 0.010 0.020 0.030 0.040 0.050 0.060 0.070 0.080 0.090 0.100 -40 -20 0 20 50 70 125 temperature c dropout voltage (v) c in = 1 f c out = 1 f i load = 50ma dropout voltage vs. temperature (v out = 3.3v) 0.000 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 0.018 0.020 -40 -20 0 20 50 70 125 temperature ( c) dropout voltage (v) c in = 1 f c out = 1 f i load = 10ma dropout voltage vs. temperature (v out = 3.3v) 0.000 0.020 0.040 0.060 0.080 0.100 0.120 0.140 0.160 0.180 0.200 -40 -20 0 20 50 70 125 temperature c dropout voltage (v) c in = 1 f c out = 1 f i load = 100ma dropout voltage vs. temperature (v out = 3.3v) 0.000 0.050 0.100 0.150 0.200 0.250 0.300 -40 -20 0 20 50 70 125 temperature c dropout voltage (v) c in = 1 f c out = 1 f i load = 150ma ground current vs.v in (v out = 3.3v) 0 10 20 30 40 50 60 70 80 90 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 v in (v) gnd current ( a) i load = 100ma c in = 1 f c out = 1 f 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
7 tc1072/1073-2 1/28/00 tc1072 tc1073 50ma and 100ma cmos ldos with shutdown, error output and v ref bypass ground current vs.v in (v out = 3.3v) 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 v in (v) gnd current ( a) i load = 150ma c in = 1 f c out = 1 f typical characteristics: (unless otherwise specified, all parts are measured at temperature = 25 c 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 output voltage vs. temperature ( v out = 3.3v) 3.275 3.280 3.285 3.290 3.295 3.300 3.305 3.310 3.315 3.320 -40 -20 -10 0 20 40 85 125 temperature c v out (v) i load = 10ma c in = 1 f c out = 1 f v in = 4.3v output voltage vs. temperature (v out = 3.3v) 3.274 3.276 3.278 3.280 3.282 3.284 3.286 3.288 3.290 -40 -20 -10 0 20 40 85 125 temperature c v out (v) i load = 150 ma c in = 1 f c out = 1 f v in = 4.3v v out vs.v in (v out = 3.3v) 0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 v out (v) c in = 1 f c out = 1 f i load = 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 v out vs. v in ( v out = 3.3v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 v out (v) i load = 100ma c in = 1 f c out = 1 f 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 v in (v) v in (v)
8 tc1072/1073-2 1/28/00 tc1072 tc1073 50ma and 100ma cmos ldos with shutdown, error output and v ref bypass typical characteristics 10.0 1.0 0.1 0.0 0.01k 0.1k 1k 10k 100k 1000k frequency (hz) output noise vs. frequency noise ( v/ hz) r load = 50 ? c out = 1 f c in = 1 f c byp = 0 1000 100 10 1 0.1 0.01 0 10 20 30 40 50 60 70 80 90 100 load current (ma) stability region vs. load current c out esr ( ? ) c out = 1 f to 10 f stable region 30 35 40 45 50 60 55 65 70 75 80 0.01k 0.1k 1k 10k 100k 1000k frequency (hz) power supply rejection ratio psrr (db) i out = 10ma v in dc = 4v v in ac = 100mv p-p v out = 3v c in = 0 c out = 1 f ouput voltage vs.temperature (v out = 5v) 4.985 4.990 4.995 5.000 5.005 5.010 5.015 5.020 5.025 -40 -20 -10 0 20 40 85 125 temperature c v out (v) i load = 10ma v in = 6v, c out = 1 f, c in = 1 f output voltage vs.temperature (v out = 5v) 4.974 4.976 4.978 4.980 4.982 4.984 4.986 4.988 4.990 4.992 4.994 -40 -20 -10 0 20 40 85 125 temperature c v out (v) i load = 150ma v in = 6v, c out = 1 f, c in = 1 f temperature vs. quiescent current (v out = 5v) 0 10 20 30 40 50 60 70 -40 -20 -10 0 20 40 85 125 temperature c gnd current ( a) i load = 10ma v in = 6v, c out = 1 f, c in = 1 f temperature vs. quiescent current (v out = 5v) 0 10 20 30 40 50 60 70 80 -40 -20 -10 0 20 40 85 125 temperature ( c) gnd current ( a) v in = 6v, c out = 1 f, c in = 1 f i load = 150ma
9 tc1072/1073-2 1/28/00 tc1072 tc1073 50ma and 100ma cmos ldos with shutdown, error output and v ref bypass typical characteristics measure rise time of 3.3v ldo with bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 470pf, i load = 100ma v in = 4.3v, temp = 25 c, rise time = 448 s measure rise time of 3.3v ldo without bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 0pf, i load = 100ma v in = 4.3v, temp = 25 c, rise time = 184 s measure fall time of 3.3v ldo with bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 470pf, i load = 50ma v in = 4.3v, temp = 25 c, fall time = 100 s measure fall time of 3.3v ldo without bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 0pf, i load = 100ma v in = 4.3v, temp = 25 c, fall time = 52 s v shdn v out v out v shdn v out v shdn v out v shdn
10 tc1072/1073-2 1/28/00 tc1072 tc1073 50ma and 100ma cmos ldos with shutdown, error output and v ref bypass typical characteristics measure rise time of 5.0v ldo with bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 470pf, i load = 100ma v in = 6v, temp = 25 c, rise time = 390 s measure rise time of 5.0v ldo without bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 0, i load = 100ma v in = 6v, temp = 25 c, rise time = 192 s measure fall time of 5.0v ldo with bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 470pf, i load = 50ma v in = 6v, temp = 25 c, fall time = 167 s measure fall time of 5.0v ldo without bypass capacitor conditions: c in = 1 f, c out = 1 f, c byp = 0pf, i load = 100ma v in = 6v, temp = 25 c, fall time = 88 s v out v shdn v out v shdn v out v shdn v out v shdn
11 tc1072/1073-2 1/28/00 tc1072 tc1073 50ma and 100ma cmos ldos with shutdown, error output and v ref bypass load regulation of 3.3v ldo conditions: c in = 1 f, c out = 2.2 f, c byp = 470pf, v in = v out + 0.25v, temp = 25 c typical characteristics load regulation of 3.3v ldo conditions: c in = 1 f, c out = 2.2 f, c byp = 470pf, v in = v out + 0.25v, temp = 25 c load regulation of 3.3v ldo conditions: c in = 1 f, c out = 2.2 f, c byp = 470pf, v in = v out + 0.25v, temp = 25 c line regulation of 3.3v ldo conditions: v in = 4v,+ 1v squarewave @ 2.5khz, i load v out i load = 50ma switched in at 10khz, v out is ac coupled i load v out i load = 100ma switched in at 10khz, v out is ac coupled i load v out i load = 150ma switched in at 10khz, v out is ac coupled v in v out c in = 0 f, c out = 1 f, c byp = 470pf, i load = 100ma, v in & v out are ac coupled
12 tc1072/1073-2 1/28/00 tc1072 tc1073 50ma and 100ma cmos ldos with shutdown, error output and v ref bypass line regulation of 5.0v ldo conditions: v in = 6v,+ 1v squarewave @ 2.5khz, typical characteristics thermal shutdown response of 5.0v ldo conditions: v in = 6v,c in = 0 f, c out = 1 f i load was increased until temperature of die reached about 160 c, at which time integrated thermal protection circuitry shuts the regulator off when die temperature exceeds approximately 160 c. the regulator remains off until die temperature drops to approximately 150 c. v in v out v out c in = 0 f, c out = 1 f, c byp = 470pf, i load = 100ma, v in & v out are ac coupled
13 tc1072/1073-2 1/28/00 tc1072 tc1073 50ma and 100ma cmos ldos with shutdown, error output and v ref bypass taping form 6-pin sot-23a & = part number code + temperature range and voltage (v) tc1072 code tc1073 code 2.5 e1 f1 2.7 e2 f2 2.8 ez fz 2.85 e8 f8 3.0 e3 f3 3.3 e5 f5 3.6 e9 f9 4.0 e0 f0 5.0 e7 f7 represents year and quarter code represents lot id number user direction of feed user direction of feed device marking component taping orientation for 6-pin sot-23a (eiaj sc-74) devices device marking pin 1 pin 1 standard reel component orientation for tr suffix device (mark right side up) reverse reel component orientation for rt suffix device (mark upside down) w p package carrier width (w) pitch (p) part per full reel reel size 6-pin sot-23a 8 mm 4 mm 3000 7 in carrier tape, number of components per reel and reel size
14 tc1072/1073-2 1/28/00 tc1072 tc1073 50ma and 100ma cmos ldos with shutdown, error output and v ref bypass sales offices telcom semiconductor, inc. 1300 terra bella avenue p.o. box 7267 mountain view, ca 94039-7267 tel: 650-968-9241 fax: 650-967-1590 e-mail: liter@telcom-semi.com telcom semiconductor h.k. ltd. 10 sam chuk street, 6/f san po kong kowloon hong kong tel: 852-2324-0122 fax: 852-2354-9957 telcom semiconductor, gmbh lochhamer strasse 13 d-82152 martinsried germany tel: (011) 49 89 895 6500 fax: (011) 49 89 895 6502 2 package dimensions dimensions: inches (mm) note: *6-pin sot-23a is equivalent to the eiaj (sc-74a) 6-pin sot-23a (eiaj sc-74) .069 (1.75) .059 (1.50) .122 (3.10) .098 (2.50) .075 (1.90) ref. .020 (0.50) .014 (0.35) .037 (0.95) ref. .118 (3.00) .110 (2.80) .057 (1.45) .035 (0.90) .006 (0.15) .000 (0.00) .024 (0.60) .004 (0.10) 10 max. .008 (0.20) .004 (0.09)

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