philips semiconductors product specification logic level topfet buk148-50dl description quick reference data monolithic temperature and symbol parameter max. unit overload protected logic level power mosfet in topfet2 technology v ds continuous drain source voltage 50 v assembled in a 3 pin plastic i d continuous drain current 8 a package. p d total power dissipation 40 w t j continuous junction temperature 150 ?c applications r ds(on) drain-source on-state resistance 100 m ? general purpose switch for driving i isl input supply current v is = 5 v 650 a lamps motors solenoids heaters in automotive systems and other applications. features functional block diagram trenchmos output stage current limiting overload protection overtemperature protection protection latched reset by input 5 v logic compatible input level control of output stage and supply of overload protection circuits derived from input low operating input current permits direct drive by micro-controller esd protection on all pins overvoltage clamping for turn off of inductive loads fig.1. elements of the topfet. pinning - sot226 pin configuration symbol pin description 1 input 2 drain 3 source tab drain drain source input rig logic and protection o / v clamp power mosfet tab 123 p d s i topfet may 2001 1 rev 1.100
philips semiconductors product specification logic level topfet buk148-50dl limiting values limiting values in accordance with the absolute maximum rating system (iec 134) symbol parameter conditions min. max. unit v ds continuous drain source voltage 1 - - 50 v i d continuous drain current v is = 5 v; t mb = 25 ?c - self - a limited i d continuous drain current v is = 5 v; t mb 110 ?c - 8 a i i continuous input current - -5 5 ma i irm non-repetitive peak input current t p 1 ms -10 10 ma p d total power dissipation t mb 25 ?c - 40 w t stg storage temperature - -55 175 ?c t j continuous junction temperature 2 normal operation - 150 ?c t sold case temperature during soldering - 260 ?c esd limiting value symbol parameter conditions min. max. unit v c electrostatic discharge capacitor human body model; - 2 kv voltage c = 250 pf; r = 1.5 k ? overvoltage clamping limiting values at a drain source voltage above 50 v the power mosfet is actively turned on to clamp overvoltage transients. symbol parameter conditions min. max. unit inductive load turn-off i dm = 8 a; v dd 20 v e dsm non-repetitive clamping energy t mb 25 ?c - 100 mj e drm repetitive clamping energy t mb 95 ?c; f = 250 hz - 20 mj overload protection limiting value with an adequate protection supply provided via the input pin, topfet can protect itself from two types of overload - overtemperature and short circuit load. symbol parameter required condition min. max. unit v ds drain source voltage 3 4 v v is 5.5 v 0 35 v thermal characteristics symbol parameter conditions min. typ. max. unit thermal resistance r th j-mb junction to mounting base - - 2.5 3.1 k/w r th j-a junction to ambient - 50 - k/w 1 prior to the onset of overvoltage clamping. for voltages above this value, safe operation is limited by the overvoltage clampi ng energy. 2 a higher t j is allowed as an overload condition but at the threshold t j(to) the over temperature trip operates to protect the switch. 3 all control logic and protection functions are disabled during conduction of the source drain diode. may 2001 2 rev 1.100
philips semiconductors product specification logic level topfet buk148-50dl output characteristics limits are for -40?c t mb 150?c; typicals are for t mb = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit off-state v is = 0 v v (cl)dss drain-source clamping voltage i d = 10 ma 50 - - v i dm = 1 a; t p 300 s; 0.01 50 60 70 v i dss drain source leakage current v ds = 40 v - - 100 a t mb = 25 ?c - 0.1 10 a on-state i dm = 3 a; t p 300 s; 0.01 r ds(on) drain-source resistance v is 4.4 v - - 190 m ? t mb = 25 ?c - 68 100 m ? v is 4 v - - 200 m ? t mb = 25 ?c - 72 105 m ? overload characteristics -40?c t mb 150?c unless otherwise specified. symbol parameter conditions min. typ. max. unit short circuit load v ds = 13 v i d drain current limiting v is = 5 v; t mb = 25?c 8 12 16 a 4.4 v v is 5.5 v 6 - 18 a 4 v v is 5.5 v 5 - 18 a overload protection v is = 5 v; t mb = 25?c p d(to) overload power threshold device trips if p d > p d(to) 20 55 80 w t dsc characteristic time which determines trip time 1 200 350 600 s overtemperature protection t j(to) threshold junction 150 170 - ?c temperature 2 1 trip time t d sc varies with overload dissipation p d according to the formula t d sc t dsc / ln[ p d / p d(to) ]. 2 this is independent of the dv/dt of input voltage v is . may 2001 3 rev 1.100
philips semiconductors product specification logic level topfet buk148-50dl input characteristics the supply for the logic and overload protection is taken from the input. limits are for -40?c t mb 150?c; typicals are for t mb = 25?c unless otherwise specified symbol parameter conditions min. typ. max. unit v is(to) input threshold voltage v ds = 5 v; i d = 1 ma 0.6 - 2.4 v t mb = 25?c 1.1 1.6 2.1 v i is input supply current normal operation; v is = 5 v 100 220 400 a v is = 4 v 80 195 330 a i isl input supply current protection latched; v is = 5 v 200 400 650 a v is = 3 v 130 250 430 a v isr protection reset voltage 1 reset time t r 100 s 1.5 2 2.9 v t lr latch reset time v is1 = 5 v, v is2 < 1 v 10 40 100 s v (cl)is input clamping voltage i i = 1.5 ma 5.5 - 8.5 v r ig input series resistance 2 t mb = 25?c - 33 - k ? to gate of power mosfet switching characteristics t mb = 25 ?c; v dd = 13 v; resistive load r l = 4 ? . refer to waveform figure and test circuit. symbol parameter conditions min. typ. max. unit t d on turn-on delay time v is = 5 v - 8 20 s t r rise time - 20 50 s t d off turn-off delay time v is = 0 v - 25 70 s t f fall time - 16 40 s 1 the input voltage below which the overload protection circuits will be reset. 2 not directly measureable from device terminals. may 2001 4 rev 1.100
philips semiconductors product specification logic level topfet buk148-50dl mechanical data dimensions in mm net mass: 2 g fig.2. sot226 notes 1. refer to mounting instructions for sot226 package. 2. epoxy meets ul94 v0 at 1/8". references outline version european projection issue date iec jedec eiaj sot226 low-profile 3-lead to-220ab d d 1 l 123 l 2 l 1 mounting base b 1 e e q b 0 5 10 mm scale plastic single-ended package; low-profile 3 lead to-220ab sot226 dimensions (mm are the original dimensions) a e a 1 c note 1. terminals in this zone are not tinned. unit a 1 b 1 d 1 eq mm 2.54 l 1 2.6 2.2 3.30 2.79 15.0 13.5 10.3 9.7 1.5 1.1 9.65 8.65 0.7 0.4 1.3 1.0 0.9 0.7 1.40 1.27 4.5 4.1 ab d c 3.0 l 2 (1) max e l 99-05-27 99-09-13 may 2001 5 rev 1.100
philips semiconductors product specification logic level topfet buk148-50dl definitions data sheet status data sheet product definitions status 1 status 2 objective data development this data sheet contains data from the objective specification for product development. philips semiconductors reserves the right to change the specification in any manner without notice preliminary data qualification this data sheet contains data from the preliminary specification. supplementary data will be published at a later date. philips semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product product data production this data sheet contains data from the product specification. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. changes will be communicated according to the customer product/process change notification (cpcn) procedure snw-sq-650a limiting values limiting values are given in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of this specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. ? philips electronics n.v. 2001 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. life support applications these products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. 1 please consult the most recently issued datasheet before initiating or completing a design. 2 the product status of the device(s) described in this datasheet may have changed since this datasheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. may 2001 6 rev 1.100
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