may.2004 version :0.0 page 1 of 1 C2328 silicon npn epitaxial transistor description: the C2328 is designed for use in power amplifier applications and power switching applications features: low collector saturation voltage complementary to a1020 chip appearance chip size 760um 760um chip thickness 210 20um base 160 170um bonding pad size emitter 130 260um front metal al backside metal au(as) scribe line width 60um wafer size 6 inch electrical characteristics( ta=25 ) characteristic symbol test condition min max unit collector cutoff current i cbo v cb =30v, i e =0 0.1 ua emitter cutoff current i ebo v eb =5v, i c =0 0.1 ua collector-base breakdown voltage bv cbo i c =0.1ma 30 v collector-emitter breakdown voltage bv ceo i c =10ma 30 v emitter-base breakdown voltage bv ebo i e =0.1ma 5.0 v dc current gain h fe v ce =2v, i c =0.5a 80 400 collector saturation voltage v ce (sat) i c =1a, i b =50ma 0.5 v C2328
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