2n6788 irff120 document number 5513 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. v ds drain source voltage i d @ t case = 25c continuous drain current i d @ t case = 100c continuous drain current i dm pulsed drain current 1 v gs gate source voltage p d @ t case = 25c maximum power dissipation r j-c thermal resistance junction to case r j-a thermal resistance junction to ambient t j , t stg operating and storage temperature range lead temperature ( from case for 10 secs) 100v 6.0a 3.5a 24a 20v 20w 6.25c/w 175c/w -55 to +150c 300c mechanical data dimensions in mm (inches) n?channel power mosfet enhancement mode absolute maximum ratings (t case = 25c unless otherwise stated) applications fast switching motor controls power supplies to39 package (to-205af) 0.89 (0.035) max. 12.70 (0.500) min. 4.06 (0.16) 4.57 (0.18) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 0.41 (0.016) 0.53 (0.021) dia. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 2.54 (0.100) 5.08 (0.200) typ. 45 1 2 3 pin 1 - source pin 2 - gate pin 3 - drain and case underside view 1 ? 16 features avalanche energy rating simple drive requirements hermetically sealed
parameter test conditions min. typ. max. unit v na a ? s ( ) pf ns nc v a v ns c 2n6788 irff120 document number 5513 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. 100 2.0 4.0 100 -100 25 250 0.30 0.345 1.5 350 150 24 40 70 40 70 7.7 17 0.7 4.0 2.0 7.7 6.0 24 1.8 240 2.0 v gs = 0 i d = 1.0ma v ds = v gs i d = 250 a v gs = 20v v gs = -20v v ds = 80v. v gs =0 t c = 125 c v gs = 10v i d = 3.5a v gs = 10v i d = 6.0a v ds = 15v i ds = 3.5a v gs = 0 v ds = 25v f = 1mhz v dd = 50v i d = 6.0a r g = 7.5 ? v gs = 10v (mosfet switching times are essentially independent of operating temperature.) v gs = 10v i d = 6.0a v ds = 50v modified mos power symbol showing the intergal p-n junction rectifier. i s = 6.0a v gs = 0 t j = 25 c i f = 6.0a t j = 25 c d i / d t = 100a/ sv dd = 50v electrical characteristics (t case = 25 c unless otherwise stated) drain ? source breakdown voltage gate threshold voltage gate body leakage forward gate body leakage reverse zero gate voltage drain current static drain source on-state resistance forward transconductance input capacitance output capacitance reverse transfer capacitance turn ? on delay time rise time turn ? off delay time fall time total gate charge gate to source charge gate to drain ( ? miller ? ) charge continuous source current (body diode) source current (body diode) diode forward voltage * reverse recovery time reverse recovery charge bv dss v gs(th) * i gssf i gssr i dss r ds(on) * gfs* c iss c oss c rss t d(on) t r t d(off) t f q g q gs q gd i s i sm v sd t rr q rr static electrical ratings dynamic characteristics body? drain diode ratings & characteristics ? notes * pulse test: pulse width 300 s, ? 2%
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