1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 22, 2004 12.5gb/s modulator driver amplifier TGA4802-EPU metro and long haul applications key features and performance ? frequency range: dc - 25 ghz ? single-ended input / output ? 15 db small signal gain ? 18 ghz small signal bandwidth ? wide drive range (3v to 7v) ? 15ps edge rates (20/80) ? power dissipation 1.2 watts ? 0.25um phemt 2mi technology ? die size: 3.3 x 2.0 x 0.1 mm (0.131 x 0.79 x 0.004 inches) primary applications ? mach-zehnder modulator driver for metro and long haul description the triquint tga4802 is part of a series of optical driver amplifiers suitable for a variety of driver applications. the tga4802 is a medium power wideband agc amplifier mmic die that typically provides 15db small signal gain with 10db agc range. rf ports are dc coupled enabling the user to customize system corner frequencies. the tga4802 is an excellent choice for 12.5gb/s optical modulator driver applications. the tga4802 has demonstrated capability to amplify a 2v input signal to 7vpp saturated. the tga4802 requires off-chip decoupling, a dc block and a bias tee. the tga4802 is available in die form. tga4802 fixtured data vd(rfout)=6v, id=170ma, (pdc=1.2w) vout=7vpp, vin = 2vpp scale: 2v/div, 20ps/div measured performance vin=2v 12.5gb/s vout=7vpp
2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 22, 2004 table i maximum ratings 1/ symbol parameter value notes vd positive supply voltage drain voltage at rf output 7 v 2/ id positive supply current drain current 200 ma 2/ p d power dissipation 1.4 w 2/, 3/ vg ig negative gate voltage gate current 0 v to C3 v 5 ma vctrl ictrl control gate voltage gate current vd/2 to C3 v 5 ma 4/ p in rf input sinusoidal continuous wave power 23 dbm t ch operating channel temperature 150 0 c 5/, 6/ t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c tga4802epu notes: 1 / these ratings represent the maximum operable values for the device. 2 / assure the combination of vd and id does not exceed maximum power dissipation rating. 3 / assure vctrl never exceeds vd during bias on and off sequences, and normal operation. 4 / when operated at this bias condition with a base plate temperature of 70 0 c, the median life is reduced. 5 / junction operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6 / these ratings apply to each individual fet. table ii dc probe test (ta = 25 c, nominal) limits notes symbol min max units 1/ |v bvgs | 11 30 v 1/ |v bvgd | 11 30 v notes: 1 v bvgs and v bvds are negative.
3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 22, 2004 notes: 1/ rf probe bias: v + = 8 v, adjust vg1 to achieve id = 80 ma, vctrl = +1.5 v 2/ verified by design, tga4802 assembled onto an evaluation platform as shown on page 9 then tested using the application circuit and bias procedure detailed on pages 7 and 8. 3/ vin = 2 v, data rate = 12.5 gb/s, vctrl and vg are adjusted for maximum output. 4/ computed using rss method where jpp_additive = sqrt(jpp_out 2 - jpp_in 2 ) tga4802epu table iii rf specifications (t a = 25 c nominal) bias conditions: vd = 7v id = 170 ma note test measurement conditions value units min typ max small signal bw 18 ghz 1/ small-signal gain magnitude 2 - 10 ghz 12 - 18 ghz 14 10 db 1/ input return loss magnitude 2 - 14 ghz 10 db 1/ output return loss magnitude 2 - 14 ghz 12 db 2/ 3/ saturated output power 2 - 12 ghz 22 dbm 2/, 3/ eye amplitude vd(rfout) = 6v vd(rfout) = 5v vd(rfout) = 4v 7.0 6.0 5.0 vpp 2/, 4/ additive jitter 5ps 2/, 4/ rise time (20/80) 15 ps
4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 22, 2004 tga4802epu table iv thermal information* parameter test conditions t ch ( o c) r t jc ( q c/w) t m (hrs) r q jc thermal resistance (channel to backside of carrier) vd (rf out) = 7 v i d = 170 ma pdiss = 1.2 w 110 32.7 4.2 e+7 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. thermal transfer is conducted thru the bottom of the tga4802 into the mounting carrier. design the mounting interface to assure adequate thermal transfer to the base plate.
5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 22, 2004 tga4802epu - fixtured data cable cal - includes fixture losses -40 -30 -20 -10 0 10 20 0.045 2.043 4.041 6.04 8.038 10.04 12.03 14.03 16.03 18.03 20.03 22.03 24.02 26.02 28.02 30.02 frequency (ghz) gain and rl irl gain orl tga4802epu measured fixtured data bias conditions: vd = 7v, id= 170ma
6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 22, 2004 mechanical drawing tga4802epu gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. 8qlwv ploolphwhuv lqfkhv 7klfnqhvv &klshgjhwrerqgsdgglphqvlrqvduhvkrzqwrfhqwhurierqgsdg &klsvl]hwrohudqfh %rqgsdg 5),q %rqgsdg 9fwuo %rqgsdg 9 %rqgsdg 5)2xw %rqgsdg 9fwuodx[ %rqgsdg 9j [ [ [ [ [ [ [ [ [ [ [ [
7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 22, 2004 1 rf(in) vd(rfout) vg vctrl tga4802 vdt tga4802 application circuit bias tee (pspl 5545) 23 4 6 rf(out) v + (no connection) dc block (pspl 5509) c1 c4 c5 c6 c3 c2 notes: recommended components are detailed on page 9. tga4802epu
8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 22, 2004 bias on 1. disable the rf source (ppg) 2. set vdt=0v vctrl=0v and vg=0v 3. set vg=-1.5v 4. increase vdt to 7v observing id. - assure id=0ma 5. set vctrl=+1.0v - id should still be 0ma 6. make vg more positive until idd=170ma . - typical value for vg is -0.2v 7. measure v + , adjust vdt such that v + is 6v. - this will set vd(rfout) to approximately 6v. - idd will increase slightly 8. adjust vg such that idd=170ma. 9. enable the rf source (ppg) - set vin=2v 10. output swing adjust: adjust vctrl slightly positive to increase output swing or adjust vctrl slightly negative to decrease the output swing. - typical value for vctrl is +1.0v for vo=7v. 11. crossover adjust: adjust: vg slightly positive to push the crossover down or adjust vg slightly negative to push the crossover up. - typical value for vg is -0.2v to center crossover with vo=7v. bias off 1. disable the output of the ppg 2. set vctrl=0v 3. set vdt=0v 4. set vg=0v bias procedure for 7v output notes: 1. assure vctrl never exceeds vd during bias on and bias off sequences and during normal operation. tga4802epu
9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 22, 2004 gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. evaluation platform assembly diagram c4 c5 c1 c2 c6 c3 designator description manufacturer part number c1, c4 1500pf capacitor slc presidio sl5050x7r1522h5 c2, c5 0.1uf capacitor mlc ceramic avx 0603yc104kat c3 10uf capacitor mlc ceramic avx 0603yc102kat c6 0.01 uf capacitor mlc avx 0603yc103kat recommended components: rf(out) and vd(rfout) rf(in) vg v + vctrl tga4802epu
10 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 22, 2004 assembly notes: reflow attachment: use ausn (80/20) solder with limited exposure to temperatures at or above 300 ? c use alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere adhesive attachment: organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical component pickup and placement: vacuum pencil and/or vacuum collet preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement interconnect: thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200 ? c evaluation platform assembly notes tga4802epu
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