1 edition 1.3 august 1999 item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 25.0 -65 to +175 175 t c = 25 ? c v v w ? c ? c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 ? c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 16.0 and -2.2 ma respectively with gate resistance of 100 w . item saturated drain current transconductance pinch-off voltage gate source breakdown voltage output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 1700 2600 -0.5 -1.5 -3.0 35.5 36.0 - 5.5 6.5 - v ds = 5v, i ds = 85ma v ds = 5v, i ds = 1100ma v ds = 5v, v gs = 0v i gs = -85 a v ds = 10v f = 12.7 ~ 13.2 ghz i ds @ 0.65 i dss (typ.) z s = z l = 50 w ma v - 1700 - ms -5.0 - - v db dbm g m v p v gso p 1db g 1db drain current - 1100 1300 ma i dsr power-added efficiency -28- % h add gain flatness -- 0.6 db ? g thermal resistance channel to case - 5.0 6.0 ? c/w r th 3rd order intermodulation distortion f = 13.2ghz, ? f = 10mhz 2-tone test pout = 25.5dbm s.c.l. -44 -46 - dbc im 3 test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 ? c) case style: ia g.c.p.: gain compression point, s.c.l.: single carrier level 10v x i dsr x r th channel temperature rise -- 80 ? c ? t ch features ?high output power: p 1db = 36.0dbm (typ.) ?high gain: g 1db = 6.5db (typ.) ?high pae: h add = 28% (typ.) ?low im 3 = -46dbc@po = 25.5dbm ?broad band: 12.7 ~ 13.2ghz ?impedance matched zin/zout = 50 w ?hermetically sealed description the FLM1213-4F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. fujitsu s stringent quality assurance program assures the highest reliability and consistent performance. FLM1213-4F x, ku-band internally matched fet
2 FLM1213-4F x, ku-band internally matched fet power derating curve 50 0 100 150 200 case temperature ( ? c) 24 30 18 12 6 total power dissipation (w) output power & im 3 vs. input power v ds =10v f1 = 13.2 ghz f2 = 13.21 ghz 2-tone test 17 21 19 23 25 input power (s.c.l.) (dbm) s.c.l.: single carrier level output power (s.c.l.) (dbc) -20 -30 -40 -50 25 23 21 27 29 31 im 3 (dbc) im 3 p out 12.7 12.8 12.9 13.0 13.1 13.2 33 32 34 35 36 frequency (ghz) output power (dbm) output power vs. frequency v ds = 10v p 1db pin = 31.0dbm 29.0dbm 27.0dbm 25.0dbm 20 22 24 26 28 30 29 27 31 33 35 37 30 15 45 input power (dbm) output power (dbm) h add (%) h add pout output power vs. input power v ds = 10v f = 12.95 ghz
3 FLM1213-4F x, ku-band internally matched fet +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 ? +90 ? 0 ? -90 ? s 21 s 12 scale for |s 21 | scale for |s 12 | 0.2 0.1 100 13.3 13.3 13.1 13.1 12.7 12.7 12.9 12.9 10 12.5 12.5 13.4 13.4 1 2 3 4 13.3 13.3 13.1 13.1 12.7 12.7 12.9 12.9 12.5 12.5 13.4 13.4 s-parameters v ds = 10v , i ds = 1 100ma frequency s1 1 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 12500 .447 -178.5 2.188 -152.5 .046 -108.0 .741 6.9 12600 .372 171.0 2.249 -164.6 .048 -122.5 .738 -2.0 12700 .306 162.4 2.275 -174.2 .048 -138.0 .727 -9.1 12800 .242 151.4 2.307 175.8 .054 -154.2 .719 -16.6 12900 .154 132.3 2.323 162.5 .060 -170.7 .695 -27.0 13000 .098 108.9 2.344 152.5 .064 175.3 .671 -35.4 13100 .062 59.6 2.350 142.1 .071 161.6 .646 -43.9 13200 .092 -15.9 2.333 127.9 .076 145.4 .602 -56.4 13300 .143 -39.8 2.317 1 17.3 .083 135.0 .562 -66.0 13400 .192 -57.3 2.274 106.3 .088 121.9 .513 -76.7
4 for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1 138, u.s.a. phone: (408) 232-9500 f ax: (408) 428-91 1 1 www .fcsi.fujitsu.com fujitsu microelectronics, ltd. compound semiconductor division network house norreys drive maidenhead, berkshire sl6 4fj phone:+44 (0)1628 504800 f ax:+44 (0)1628 504888 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. 1998 fujitsu compound semiconduct or, inc. printed in u.s.a. fcsi0598m200 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put these products into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FLM1213-4F x, ku-band internally matched fet 2-r 1.25 0.15 (0.049) 0.5 (0.020) 8.1 (0.319) 13.0 0.15 (0.512) 16.5 0.15 (0.650) 3.2 max. (0.126) 1.8 0.15 (0.071) 0.1 (0.004) 9.7 0.15 (0.382) 1.5 min. (0.059) 1.5 min. (0.059) 1.15 (0.045) 0.2 max. (0.008) case style "ia" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 4. source (flange) 1 2 3 4
|
