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trenchfet power mosfets: 2.5-v rated new powerpak package ? low thermal resistance, r thjc ? low 1.07-mm profile

load switching pa switching SI7403DN vishay siliconix new product document number: 71431 s-03390?rev. a, 02-apr-01 www.vishay.com 1 p-channel 20-v (d-s) mosfet v ds (v) r ds(on) ( ) i d (a) 0.1 @ v gs = ?4.5 v ?4.5 ?20 0.135 @ v gs = ?2.5 v ?3.8 p-channel mosfet dd g s d d s s 1 2 3 4 5 6 7 8 s s s g d d d d 3.30 mm 3.30 mm powerpak 1212-8 bottom view

parameter symbol 10 secs steady state unit drain-source voltage v ds ?20 gate-source voltage v gs 8 v a t a = 25 c ?4.5 ?2.9 continuous drain current (t j = 150 c) a t a = 85 c i d ?3.2 ?2.1 pulsed drain current i dm ?20 a continuous source current (diode conduction) a i s ?3.0 ?1.3 t a = 25 c 3.5 1.5 maximum power dissipation a t a = 85 c p d 1.9 0.8 w operating junction and storage temperature range t j , t stg ?55 to 150 c

parameter symbol typical maximum unit t 10 sec 28 35 maximum junction-to-ambient a steady state r thja 65 81 c/w maximum junction-to-case steady state r thjc 4.5 5.6 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI7403DN vishay siliconix new product www.vishay.com 2 document number: 71431 s-03390 ? rev. a, 02-apr-01

parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 0.45 v gate-body leakage i gss v ds = 0 v, v gs = 4.5 v 100 na v ds = ? 20 v, v gs = 0 v ? 1 zero gate voltage drain current i dss v ds = ? 20 v, v gs = 0 v, t j = 70 c ? 5 a v ds = ? 5 v, v gs = ? 4.5 v ? 10 on-state drain current a i d(on) v ds = ? 5 v, v gs = ? 2.5 v ? 4 a v gs = ? 4.5 v, i d = ? 3.3 a 0.078 0.1 drain-source on-state resistance a r ds(on) v gs = ? 2.5 v, i d = ? 2.9 a 0.110 0.135 forward transconductance a g fs v ds = ? 10 v, i d = ? 3.3 a 8.8 s diode forward voltage a v sd i s = ? 1.6 a, v gs = 0 v 0.8 ? 1.2 v dynamic b total gate charge q g 8.6 14 gate-source charge q gs v ds = ? 10 v, v gs = ? 4.5 v, i d = ? 4.5 a 1.5 nc gate-drain charge q gd 3.1 turn-on delay time t d(on) 27 50 rise time t r v dd = ? 10 v, r l = 10 17 30 turn-off delay time t d(off) v dd = ? 10 v, r l = 10 i d ? 1.6 a, v gen = ? 4.5 v, r g = 6 52 80 ns fall time t f 45 70 source-drain reverse recovery time t rr i f = ? 1.6 a, di/dt = 100 a/ s 50 80 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.

0 4 8 12 16 20 012345 0 4 8 12 16 20 01234 output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d v gs = 4.5, 4, 3.5 v 1.5 v 2 v 2.5 v 3 v t c = ? 55 c 125 c 25 c
SI7403DN vishay siliconix new product document number: 71431 s-03390 ? rev. a, 02-apr-01 www.vishay.com 3

0 1 2 3 4 5 0246810 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ? 50 ? 25 0 25 50 75 100 125 150 0.00 0.06 0.12 0.18 0.24 0.30 048121620 0 200 400 600 800 1000 1200 1400 048121620 gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction t emperature v gs = 4.5 v i d = 3.3 a t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) v gs = 4.5 v v gs = 2.5 v c rss c oss c iss v ds = 10 v i d = 3.3 a 0.00 0.06 0.12 0.18 0.24 0.30 02468 source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s t j = 150 c t j = 25 c i d = 3.3 a 20 10 1 0 0.25 0.50 0.75 1.00 1.25 1.50
SI7403DN vishay siliconix new product www.vishay.com 4 document number: 71431 s-03390 ? rev. a, 02-apr-01

? 0.2 ? 0.1 0.0 0.1 0.2 0.3 0.4 ? 50 ? 25 0 25 50 75 100 125 150 threshold voltage t j ? temperature ( c) i d = 250 a variance (v) v gs(th) 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 0.01 0 1 40 50 10 600 single pulse power, juncion-t o-ambient time (sec) 30 20 power (w) 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 68 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 ? 3 10 ? 2 1 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 0.1 10 100
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.

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