d i sc o n t inue d d e v i c es p o ss i b le r epl a c e m en ts t s m bj 1024c n one t s m bj 1022c n one t s m bj 1018c n one t s m bj 1016c n one t s m bj 1012c n one t s m bj 1010c n one t s m bj 1009 c- 130 n one t s m bj 1007c n one t s m bj 1006c n one t s m bj 1005 c- 072 n one t s m bj 1005 c- 064 n one t s m bj 0524c n one t s m bj 0522c n one t s m bj 0518c n one t s m bj 0516c n one t s m bj 0512c n one t s m bj 0510c n one t s m bj 0509 c- 130 n one tm micro commercial components m i c r o c o mm e r c i a l c o mp o ne nt s c o r p . p r od u ct s e n d of l i f e noti f ic atio n i ss ue d at e : o c t -20 t h - 2008 l a s t b u y d at e : d es c r i p t i o n a n d p u r p ose : m cc h a s unde r g o ne a r e v ie w o f i t s c o r e b u s in ess a n d p r o d u c t s , a n d de t e r m ined t o d i sc o n t inue bel o w p r o d u c t s : m c c dec - 31 th -2008 www. mccsemi .com
tm micro commercial components d i sc o n t inue d d e v i c es p o ss i b le r epl a c e m en ts t s m bj 0507c n one t s m bj 0506c n one t s m bj 0505 c- 072 n one t s m bj 0505 c- 064 n one t s m bj 0324c n one t s m bj 0322c n one t s m bj 0318c n one t s m bj 0316c n one t s m bj 0312c n one t s m bj 0310c n one t s m bj 0309 c- 130 n one t s m bj 0307c n one t s m bj 0306c n one t s m bj 0305 c- 072 n one t s m bj 0305 c- 064 n one m c c www. mccsemi .com
transient voltage protection device 65 volts features oxide-glass passivated junction bi-directional protection in a single device surge capabilities up to 50a@10/1000us or 150a@8/20 us high off-state impedance and low on-state voltage plastic material has ul flammability classification 94v -0 mechanical data case : molded plastic polarity : none cathode band denotes approx weight : 0.093grams maximum ratings characteristic symbol value unit non-repetitive peak impulse current i pp 50a 10/1000us non-repetitive peak on-state current i tsm 20a 8.3ms, one-half cycle operating temperature range t op -40~125 o c junction and storage temperature range t j , t stg -55~150 o c thermal resistance characteristic symbol value unit thermal resistance junction to lead 30 o c/w thermal resistance junction to ambient 120 o c/w on recommended pad layout typical positive temperature coefficient for breakdown voltage 0.1%/ o c ? v br / ? t j www. mccsemi .com do-214aa (smbj) h j e f g a b d c dimensions inches mm dim min max min max note a .078 .096 2.00 2.44 b .077 .083 1.96 2.10 c .002 .008 .05 .20 d --- .02 --- .51 e .030 .060 .76 1.52 f .065 .091 1.65 2.32 g .205 .220 5.21 5.59 h .160 .180 4.06 4.57 j .130 .155 3.30 3.94 0.070? 0.090" 0.085? suggested solder pad layout tsmbj0305c-072 r ja r j l
omp onents 20736 marilla street chatsworth !"# $
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www. mccsemi .com m c c parameter rated repetitive off - state voltage off-state leakage current@v drm breakover voltage on-state voltage @i t =1.0a breakover current holding current off-state capacitance maximum rated surge waveform maximum rated surge waveform maximum rated surge waveform maximum rated surge waveform waveform standard ipp (a) 2/10 us gr-1089-core 200 8/20 us iec 61000-4-5 150 10/160 us fcc part 68 100 10/700 us itu-t k20/21 60 10/560 us fcc part 68 6 0 10/1000 us gr-1089-core 5 0 time 0 50 100 0 ipp ; peak pulse current (%) peak value (ipp) half value tr tp tr = rise time to peak value tp = decay time to half value symbol parameter v drm stand-off voltage i drm leakage current at stand-off voltage v br breakdown voltage i br breakdown current v bo breakover voltage i bo breakover current i h holding current note: 1 v t on state voltage i pp peak pulse current c o off-state capacitance note: 2 i v v drm i pp i bo i h i br i drm v br v bo v t note ? 1. i h > ( v l / r l ) if this criterion is not obeyed, the tspd triggers but doe s not return correctly to high-resistance state. symbol v drm i drm v bo v t i bo+ i h- c j units volts ua volts volts ma ma pf limit max max max max max min typ. the surge recovery time. it does not exceed 30ms. 2. off-state capacitance measured at f=1.0mhz , 1.0vrms sign al , vr=2vdc bias. electrical characteristic @25 : unless otherwise specified tsmbj0305c-072 tsmbj0305c-072 65 5 88 5 800 150 100 revision: 4 200 5/01/10 tm micro commercial components
m c c tsmbj0305c-072 -50 -25 0 25 50 75 100 125 150 175 tj ; junction temperature ( : ) 0.9 0.95 1 1.05 1.1 1.15 1.2 normalised breakdown voltage fig.2 - relative variation of breakdown voltage v.s junction temperature -25 0 25 50 75 100 125 150 tj , junction temperature ( : ) 0.001 0.01 0.1 1 10 100 i(drm) , off-state current(ua) fig.1 - off-state current v.s junction temperature v drm = 50v v br (t j ) v br (t j =25 : ) -50 -25 0 25 50 75 100 125 150 175 tj ; junction temperature ( : ) 0.95 1 1.05 1.1 normalised breakover voltage fig.3 - relative variation of breakover voltage v.s junction temperature v bo (t j ) v bo (t j =25 : ) 1 2 3 4 5 6 7 8 9 v(t) ; on-state voltage 1 10 100 i(t) ; on-state current (a) fig.4 - on-state current v.s on-state voltage t j = 25 : -50 -25 0 25 50 75 100 125 tj ; junction temperature ( : ) 0 0.5 1 1.5 2 normalised holding current fig.5 - relative variation of holding current v.s junction temperature i h (t j ) i h (t j =25 : ) 1 10 100 vr ; reverse voltage (v) 0.1 1 normalised capacitance fig.6 - relative variation of junction capacitance v.s reverse voltage bias tj =25 : f=1mhz v rms = 1v c o (vr) c o (vr = 1v) www. mccsemi .com revision: 4 200 5/01/10 tm micro commercial components
m c c www. mccsemi .com t smbj 0305 c -072 telecom equipment e.g. modem tip ring fuse fuse fuse fuse tvpd 1 telecom equipment e.g. isdn tip ring tvpd 1 tvpd 2 ptc ptc telecom equipment e.g. line card tip ring tvpd 2 tvpd 3 tvpd 1 ptc ptc typical application circuits the ptc (positive temperature coefficient) is an overcu rrent protection device. revision: 4 200 5/01/10 tm micro commercial components
marking code mcc m c c www. mccsemi .com 0305c 072
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