parameter symbol typical units bandwidth f 24.5-29.0 ghz output power pout 27 dbm power added efficiency pae 20 % 1-db compression point p1db 27 dbm small signal gain g 13 db input vswr vswr 2 :1 output vswr vswr 2.5:1 gate supply current igg < 10 ma drain supply current idd < 600 ma output third order intercept otoi 35 24.5 ?29.0 ghz 0.5 w power amplifier MAAPGM0049-DIE features ? 0.5 watt saturated output power level ? variable drain voltage (5-8v) operation ? gaas msag ? process ? proven manufacturability and reliability no airbridges polyimide scratch protection no hydrogen poisoning susceptibility description the MAAPGM0049-DIE is a 3-stage power amplifier with on-chip bias networks. this product is fully matched to 50 ohms on both the input and output. it can be used as a power amplifier stage or as a driver stage in hi gh power applications. fabricated using m/a-com?s repeatable, high performance and highly reliable gaas multifunction self-aligned gate (msag ? ) mesfet process, each device is 100% rf tested on wafer to ensure performance compliance. m/a-com?s msag process features robust silicon-like manufac- turing processes, planar processi ng of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital fets on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. the use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging . electrical characteristics: t b = 40c 1 , z 0 = 50w, v dd = 6v, i dq 410 ma, p in = 17 dbm , rg 174 ? 1. 1. t b = mmic base temperature 2. adjust v gg between ?2.4 and ?1.5v to achieve i dq indicated. ro-p-ds-3079 preliminary information primary applications ? point to point (27.5-29.5) ? satcom ? msss uplink MAAPGM0049-DIE
ro-p-ds-3079 24.5-29.0 ghz 0.5 w power amplifier MAAPGM0049-DIE v 1.00 specifications subject to change without notice. customer service: tel. (888)-563-3949 email: macom_adbu_ics@tycoelectronics.com ? north america: tel. (800) 366-2266 ? asia/pacific: tel.+81-44-844-8296, fax +81-44-844-8298 ? europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 visit www.macom.com for additional data sheets and product information. maximum operating conditions 3 operating instructions this device is static sensitive. please handle with care. to operate the device, follow these steps. 1. apply v gg = -2 v, v dd = 0 v. 2. ramp v dd to desired voltage, typically 10 v. 3. adjust v gg to set i dq . 4. set rf input. 5. power down sequence in reverse. turn v gg off last. characteristic symbol min typ max unit drain supply voltage v dd 4.0 6.0 10.0 v gate supply voltage v gg -2.3 -2.0 -1.5 v input power p in 20.0 dbm junction temperature t j 150 c mmic base temperature tb note 2 c thermal resistance jc 31.3 c/w recommended operating conditions parameter symbol absolute maximum units input power p in 22.0 dbm drain supply voltage v dd +10.0 v gate supply voltage v gg 655 v quiescent drain current (no rf, 40% idss) i dq 380 ma junction temperature t j 180 c storage temperature t stg -55 to +150 c quiescent power dissipated (no rf) p diss 2.5 w die attach temperature 310 c 3. operation outside of these ranges may reduce product reliability. operation at other than the typical values may result in performance outside the guaranteed limits. 4. maximum mmic base temperature = 150c ? jc * v dd * i dq
ro-p-ds-3079 24.5-29.0 ghz 0.5 w power amplifier MAAPGM0049-DIE v 1.00 specifications subject to change without notice. customer service: tel. (888)-563-3949 email: macom_adbu_ics@tycoelectronics.com ? north america: tel. (800) 366-2266 ? asia/pacific: tel.+81-44-844-8296, fax +81-44-844-8298 ? europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 visit www.macom.com for additional data sheets and product information. figure 1. output power and power added efficiency vs. frequenc y at v dd = 6v and p in = 17 dbm 0 10 20 30 40 50 24.0 24.5 25.0 25.5 26.0 26.5 27.0 27.5 28.0 28.5 29.0 29.5 frequency (ghz) pout ( dbm ) 0 10 20 30 40 50 pae ( % ) pout pae figure 2. 1db compression point vs. drain voltage 0 10 20 30 40 50 24.0 24.5 25.0 25.5 26.0 26.5 27.0 27.5 28.0 28.5 29.0 29.5 frequency (ghz) p1db ( dbm ) vdd = 6 vdd = 8 vdd = 5 vdd = 7 figure 3. output power vs. input power at v dd = 6v 0 10 20 30 40 50 -1135791113151719 pin (dbm) pout ( dbm ) 24.5 ghz 27.0 ghz 29.0 ghz figure 4. saturated output power and power added efficiency vs. drain voltage at f o = 27 ghz 0 10 20 30 40 50 5.0 5.5 6.0 6.5 7.0 7.5 8.0 drain voltage (volts) pout (dbm) 0 10 20 30 40 50 pae(%) pout pae figure 5. small signal gain and vswr vs frequency at v dd = 6 v and p in = 17 dbm 0 4 8 12 16 20 24.0 24.5 25.0 25.5 26.0 26.5 27.0 27.5 28.0 28.5 29.0 frequency (ghz) gain (db) 1 2 3 4 5 6 vswr gain input vswr output vswr
ro-p-ds-3079 24.5-29.0 ghz 0.5 w power amplifier MAAPGM0049-DIE v 1.00 specifications subject to change without notice. customer service: tel. (888)-563-3949 email: macom_adbu_ics@tycoelectronics.com ? north america: tel. (800) 366-2266 ? asia/pacific: tel.+81-44-844-8296, fax +81-44-844-8298 ? europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 visit www.macom.com for additional data sheets and product information. mechanical information chip size: 3.000 x 3.000 x 0.075 mm ( 118 x 118 x 3 mils) pad size ( m) rf in and out 100 x 200 dc drain supply voltage vdd 150 x 150 dc gate supply voltage vgg 150 x 150 size (mils) 4 x 8 6 x 6 6 x 6 bond pad dimensions figure 6. die layout 0.162mm 0.365mm 0 0 1.504mm 2.835mm. 3.000mm 3.000mm 0.365mm 2.834mm. 1.504mm. 2.834mm 0.162mm. 2.842mm. v g out v g v d v d in
ro-p-ds-3079 24.5-29.0 ghz 0.5 w power amplifier MAAPGM0049-DIE v 1.00 specifications subject to change without notice. customer service: tel. (888)-563-3949 email: macom_adbu_ics@tycoelectronics.com ? north america: tel. (800) 366-2266 ? asia/pacific: tel.+81-44-844-8296, fax +81-44-844-8298 ? europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 visit www.macom.com for additional data sheets and product information. figure 7. recommended bonding diagram for pedestal mount. support circuitry typical of mmic characterization fixture for cw testing. assembly instructions: die attach: use ausn (80/20) 1-2 mil. preform solder. li mit time @ 300 c to less than 5 minutes. wirebonding: bond @ 160 c using standard ball or thermal compression wedge bond techniques. for dc pad connections, use either ball or wedge bonds. for best rf performance, use wedge bonds of shortest length, although ball bonds are also acceptable. biasing note: must apply negative bias to v gg before applying positive bias to v dd to prevent damage to amplifier. 100 pf 100 pf 100 pf rf in rf out 0.1 f v gg 0.1 f v dd v g out v g v g v g in 100 pf
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