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4v drive nch + pch mosfet SH8M13 ? structure ? dimensions (unit : mm) silicon n-channel mosfet/ silicon p-channel mosfet ? features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (sop8). ? application switching ? packaging specifications ? inner circuit package taping code tb basic ordering unit (pieces) 2500 SH8M13 ? ? absolute maximum ratings (ta = 25 ? c) tr1 : n-ch tr2 : p-ch drain-source voltage v dss 30 ? 30 v gate-source voltage v gss 20 20 v continuous i d ? 6.0 ? 7.0 a pulsed i dp ? 24 ? 28 a continuous i s 1.6 ? 1.6 a pulsed i sp 24 ? 28 a w / total w / element channel temperature tch ? c range of storage temperature tstg ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. 2.0 ? 55 to ? 150 unit limits 1.4 150 total power dissipation p d symbol type source current (body diode) drain current parameter (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ? 1 esd protection diode ? 2 body diode sop8 (1) (8) (5) (4) *1 *1 ?2 ?1 ?2 ?1 (8) (7) (1) (2) (6) (5) (3) (4) *2 1/10 2011.05 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. free datasheet http:///
SH8M13 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss - - 10 ? av gs =20v, v ds =0v drain-source breakdown voltage v (br)dss 30 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =30v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.5 v v ds =10v, i d =1ma -2231 i d =6.0a, v gs =10v -3042 i d =6.0a, v gs =4.5v -3549 i d =6.0a, v gs =4.0v forward transfer admittance l y fs l 2.5 - - s v ds =10v, i d =6.0a input capacitance c iss - 350 - pf v ds =10v output capacitance c oss - 160 - pf v gs =0v reverse transfer capacitance c rss - 65 - pf f=1mhz turn-on delay time t d(on) -8-nsi d =3.0a, v dd 15v rise time t r - 16 - ns v gs =10v turn-off delay time t d(off) - 30 - ns r l =5 ? fall time t f -7-nsr g =10 ? total gate charge q g - 5.0 - nc i d =6.0a gate-source charge q gs - 1.4 - nc v dd 15v gate-drain charge q gd - 1.9 - nc v gs =5v *pulsed ? body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =6.0a, v gs =0v *pulsed parameter conditions conditions parameter static drain-source on-state resistance r ds (on) m ? * * * * * * * * * * * * * * * * * 2/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M13 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss - - 10 ? av gs =20v, v ds =0v drain-source breakdown voltage v (br)dss ? 30 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss - ? 1 ? av ds = ? 30v, v gs =0v gate threshold voltage v gs (th) ? 1.0 - ? 2.5 v v ds = ? 10v, i d = ? 1ma - 21.5 29.0 i d = ? 7.0a, v gs = ? 10v - 29.0 39.0 i d = ? 3.5a, v gs = ? 4.5v - 31.0 40.8 i d = ? 3.5a, v gs = ? 4.0v forward transfer admittance l y fs l 6.0 - - s i d = ? 7.0a, v ds = ? 10v input capacitance c iss - 1200 - pf v ds = ? 10v output capacitance c oss - 170 - pf v gs =0v reverse transfer capacitance c rss - 170 - pf f=1mhz turn-on delay time t d(on) - 12 - ns i d = ? 3.5a, v dd ? 15v rise time t r - 40 - ns v gs = ? 10v turn-off delay time t d(off) - 80 - ns r l =4.29 ? fall time t f - 65 - ns r g =10 ? total gate charge q g -18 nci d = ? 7.0a gate-source charge q gs - 3.5 - nc v dd ? 15v gate-drain charge q gd - 6.5 - nc v gs = ? 5v *pulsed ? body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 7.0a, v gs =0v *pulsed parameter conditions conditions m ? static drain-source on-state resistance r ds (on) parameter * * * * * * * * * * * * * * * * * 3/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M13 ? electrical characteristic curves (ta=25 ? c) tr.1(nch) 0 1 2 3 4 5 6 0 0.2 0.4 0.6 0.8 1 v gs = 3.0 v v gs = 10 v v gs = 4.5 v v gs = 4.0 v v gs = 2.5 v t a = 25 c pulsed fig. 1 typical output characteristics( ) drain current : i d [a] drain - source voltage : v ds [v] 0 1 2 3 4 5 6 0 2 4 6 8 10 v gs = 2.5 v v gs = 3.0 v v gs = 10 v v gs = 4.5 v v gs = 4.0 v t a = 25 c pulsed fig. 2 typical output characteristics( ) drain - source voltage : v ds [v] drain current : i d [a] 0.001 0.01 0.1 1 10 0 1 2 3 v ds = 10 v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig. 3 typical transfer characteristics drain current : i d [a] gate - source voltage : v gs [v] 1 10 100 1000 0.01 0.1 1 10 v gs = 4.0 v v gs = 4.5 v v gs = 10 v . t a = 25 c pulsed fig. 4 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 1 10 100 1000 0.1 1 10 v gs = 10 v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig. 5 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 1 10 100 1000 0.1 1 10 v gs = 4.5 v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig. 6 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 4/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M13 1 10 100 1000 0.1 1 10 v gs = 4.0 v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig. 7 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 0.1 1 10 0.01 0.1 1 10 v ds = 10 v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig. 8 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : i d [a] 0.01 0.1 1 10 0 0.5 1 1.5 v gs = 0 v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig. 9 reverse drain current vs. sourse - drain voltage source current : is [a] source - drain voltage : v sd [v] 0 25 50 75 100 0 2 4 6 8 10 i d = 6.0 a i d = 3.0 a t a = 25 c pulsed fig. 10 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds ( on )[m ? ] gate - source voltage : v gs [v] 1 10 100 1000 0.01 0.1 1 10 t f t d(on) t d(off) t a = 25 c v dd = 15 v v gs = 10 v r g = 10 w pulsed t r fig. 11 switching characteristics switching time : t [ns] drain - current : i d [a] 0 2 4 6 8 10 0 2 4 6 8 10 t a = 25 c v dd = 15 v i d = 6.0 a r g = 10 w pulsed fig. 12 dynamic input characteristics gate - source voltage : v gs [v] total gate charge : qg [nc] 5/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M13 10 100 1000 10000 0.01 0.1 1 10 100 c iss c rss t a = 25 c f= 1 mhz v gs = 0 v c oss fig. 13 typical capacitance vs. drain - source voltage drain - source voltage : v ds [v] capacitance : c [pf] 0.01 0.1 1 10 100 0.1 1 10 100 p w = 10 ms dc operation operation in this area is limited by r ds(on) (v gs = 10 v) p w = 100 us p w = 1 ms t a = 25 c single pulse : 1 unit mounted on a ceramic board. ( 30 mm 30 mm 0.8 mm) fig. 14 maximum safe operating aera drain - source voltage : v ds [v] drain current : i d (a) 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 mounted on a ceramic board. ( 30 mm 30 mm 0.8 mm) rth (ch - a) = 89.3 c /w rth (ch - a) (t)=r(t) rth (ch - a) t a = 25 c single pulse : 1 unit fig. 15 normalized transient thermal resistance vs. pulse width pulse width : pw(s) normarized transient thermal resistance : r (t) 6/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M13 tr.2(pch) 0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1 v gs = - 2.5v v gs = - 10v v gs = - 4.5v v gs = - 4.0v v gs = - 3.0v t a =25 c pulsed fig.1 typical output characteristics( ) drain current : - i d [a] drain - source voltage : - v ds [v] 0 1 2 3 4 5 6 7 0 2 4 6 8 10 v gs = - 2.5v v gs = - 3.0v v gs = - 10v v gs = - 4.5v v gs = - 4.0v t a =25 c pulsed fig.2 typical output characteristics( ) drain - source voltage : - v ds [v] drain current : - i d [a] 0.001 0.01 0.1 1 10 100 0 1 2 3 v ds = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.3 typical transfer characteristics drain current : - i d [a] gate - source voltage : - v gs [v] 1 10 100 1000 0.1 1 10 v gs = - 4.0v v gs = - 4.5v v gs = - 10v t a =25 c pulsed fig.4 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 1 10 100 1000 0.1 1 10 v gs = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.5 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 1 10 100 1000 0.1 1 10 v gs = - 4.5v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.6 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 7/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M13 1 10 100 1000 0.1 1 10 v gs = - 4.0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.7 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 0.1 1 10 100 0.01 0.1 1 10 v ds = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.8 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : - i d [a] 0.01 0.1 1 10 100 0 0.5 1 1.5 v gs =0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.9 reverse drain current vs. sourse - drain voltage source current : - i s [a] source - drain voltage : - v sd [v] 0 20 40 60 80 100 0 5 10 15 i d = - 7.0a i d = - 3.5a t a =25 c pulsed fig.10 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds ( on )[m ? ] gate - source voltage : - v gs [v] 1 10 100 1000 10000 0.01 0.1 1 10 t f t d(on) t d(off) t a =25 c v dd = - 15v v gs = - 10v r g =10 w pulsed t r fig.11 switching characteristics switching time : t [ns] drain - current : - i d [a] 0 2 4 6 8 10 0 10 20 30 t a =25 c v dd = - 15v i d = - 7.0a r g =10 w pulsed fig.12 dynamic input characteristics gate - source voltage : - v gs [v] total gate charge : qg [nc] 8/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M13 10 100 1000 10000 0.01 0.1 1 10 100 c iss c oss c rss t a =25 c f=1mhz v gs =0v fig.13 typical capacitance vs. drain - source voltage drain - source voltage : - v ds [v] capacitance : c [pf] 0.01 0.1 1 10 100 1000 0.1 1 10 100 p w = 10ms dc operation operation in this area is limited by r ds(on) (v gs = - 10v) p w =100us p w =1ms t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) fig.14 maximum safe operating aera drain - source voltage : - v ds [v] drain current : - i d (a) 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 mounted on a ceramic board. (30mm 30mm 0.8mm) rth (ch - a) =89.3 c /w rth (ch - a) (t)=r(t) rth (ch - a) t a =25 c single pulse : 1unit fig.15 normalized transient thermal resistance vs. pulse width pulse width : pw(s) normarized transient thermal resistance : r (t) 9/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M13 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. v gs r g v d s d.u.t. i d r l v dd 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform v gs r g v ds d.u.t. i d r l v dd 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.3-1 switching time measurement circuit fig.3-2 switching waveforms fig.4-1 gate charge measurement circuit fig.4-2 gate charge waveform 10/10 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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