4v drive nch + pch mosfet SH8M41 ? structure ? dimensions (unit : mm) silicon n-channel mosfet/ silicon p-channel mosfet ? features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (sop8). ? application switching ? packaging specifications ? inner circuit package taping code tb basic ordering unit (pieces) 2500 SH8M41 ? ? absolute maximum ratings (ta = 25 ? c) tr1 : n-ch tr2 : p-ch drain-source voltage v dss 80 ? 80 v gate-source voltage v gss 20 ? 20 v continuous i d ? 3.4 ? 2.6 a pulsed i dp ? 13.6 ? 10.4 a continuous i s 1.6 ? 1.6 a pulsed i sp 13.6 ? 10.4 a power dissipation p d w / total channel temperature tch ? c range of storage temperature tstg ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. ? thermal resistance symbol limits channel to ambient rth (ch-a) 62.5 *mounted on a ceramic board. parameter unit ? c / w 150 ? 55 to +150 type limits unit 2 symbol parameter drain current source current (body diode) *2 *1 *1 * (2) (3) (6) (7)(8) sop8 (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ?1 esd protection diode ?2 body diode ?2 ?1 (8) (7) (1) (2) ?2 ?1 (6) (5) (3) (4) 1/8 2010.07 - rev.a www.rohm.com ?2010 rohm co., ltd. all rights reserved. free datasheet http:///
SH8M41 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss --10 ? av gs =20v, v ds =0v drain-source breakdown voltage v (br)dss 80 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =80v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.5 v v ds =10v, i d =1ma - 90 130 i d =3.4a, v gs =10v - 110 150 i d =3.4a, v gs =4.5v - 120 160 i d =3.4a, v gs =4.0v forward transfer admittance l y fs l3 - - sv ds =10v, i d =3.4a input capacitance c iss - 600 - pf v ds =10v output capacitance c oss - 100 - pf v gs =0v reverse transfer capacitance c rss - 40 - pf f=1mhz turn-on delay time t d(on) - 12 - ns i d =1.7a, v dd 40v rise time t r - 15 - ns v gs =10v turn-off delay time t d(off) - 40 - ns r l =24 ? fall time t f - 12 - ns r g =10 ? total gate charge q g - 6.6 9.2 nc i d =3.4a gate-source charge q gs - 1.8 - nc v dd 40v gate-drain charge q gd - 2.2 - nc v gs =5v *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =6.4a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * * * * * * * * * 2/8 2010.07 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
SH8M41 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss ? 80 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss - ? 1 ? av ds = ? 80v, v gs =0v gate threshold voltage v gs (th) ? 1.0 - ? 2.5 v v ds = ? 10v, i d = ? 1ma - 165 240 i d = ? 2.6a, v gs = ? 10v - 220 300 i d = ? 1.3a, v gs = ? 4.5v - 230 310 i d = ? 1.3a, v gs = ? 4.0v forward transfer admittance l y fs l2 - - si d = ? 2.6a, v ds = ? 10v input capacitance c iss - 1000 - pf v ds = ? 10v output capacitance c oss - 90 - pf v gs =0v reverse transfer capacitance c rss - 40 - pf f=1mhz turn-on delay time t d(on) - 14 - ns i d = ? 1.3a, v dd ? 40v rise time t r - 12 - ns v gs = ? 10v turn-off delay time t d(off) - 60 - ns r l =31 ? fall time t f - 20 - ns r g =10 ? total gate charge q g - 8.2 11.5 nc i d = ? 2.6a gate-source charge q gs - 2.5 - nc v dd ? 40v gate-drain charge q gd - 2.5 - nc v gs = ? 5v *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 1.6a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * * * * * * * * * 3/8 2010.07 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
SH8M41 ? electrical characteristic curves 10 100 1000 0.1 1 10 v gs =10v v gs =4.5v v gs =4.0v 10 100 1000 0.1 1 10 v gs = 4.5v pulsed ta=125c ta=75c ta=25c ta= -25c 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 v gs = 2.6v ta=25c pulsed v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 3.0v v gs = 2.4v 0.001 0.01 0.1 1 10 01234 v ds = 10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 0.01 0.1 1 10 0 0.5 1 1.5 v gs =0v pulsed ta=125c ta=75c ta=25c ta=-25c 0 1 2 3 4 0246810 v gs = 2.4v ta=25c pulsed v gs = 2.6v v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 3.0v 10 100 1000 0.1 1 10 v gs = 10v pulsed ta=125c ta=75c ta=25c ta= -25c 0.1 1 10 0.01 0.1 1 10 v ds = 10v pulsed ta= -25c ta=25c ta=75c ta=125c 10 100 1000 0.1 1 10 v gs = 4.0v pulsed ta=125c ta=75c ta=25c ta= -25c fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.5 static drain-source on-state resistance vs. drain current( ) fig.7 static drain-source on-state resistance vs. drain current( ) fig.9 reverse drain current vs. sourse-drain voltage fig.8 forward transfer admittance vs. drain current drain current : i d [a] drain-source voltage : v ds [v] drain-source voltage : v ds [ v ] drain current : i d [a] drain c urrent : i d [a] gate-source voltage : v gs [ v ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] forward transfer admittance : |yfs| [s] drain-current : i d [a] reverse drain current : is [a] source-drain voltage : v sd [v] fig.6 static drain-source on-state resistance vs. drain current( ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] fig.4 static drain-source on-state resistance vs. drain current( ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] ta=25c pulsed 4/8 2010.07 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
SH8M41 10 100 1000 10000 0.01 0.1 1 10 100 ciss crss ta=25c f=1mhz v gs =0v coss 0 2 4 6 8 10 0 2 4 6 8 10 12 14 ta=25c v dd =40v i d = 3.4a r g =10? pulsed 1 10 100 1000 10000 0.01 0.1 1 10 t f t d (on) t d (off) ta=25c v dd =40v v gs =10v r g =10? pulsed t r 0 100 200 300 400 500 0 5 10 15 ta=25c pulsed i d = 3.4a i d = 1.7a fig.10 static drain-source on-state resistance vs. gate source volta g e static drain-source on-state resistance : r ds (on)[m ? ] gate-source voltage : v gs [v] fig.12 dynamic input characteristics fig.11 switching characteristics switching time : t [ns] drain-current : i d [a] gate-source voltage : v gs [v] total gate charge : qg [nc] fig.13 typical capacitance vs. drain-source voltage drain-source voltage : v ds [v] capacitance : c [pf] 5/8 2010.07 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
SH8M41 ? electrical characteristic curves 10 100 1000 0.1 1 10 ta= 25c pulsed v gs =-10v v gs = -4.5v v gs = -4.0v 10 100 1000 0.1 1 10 v gs = -4.5v pulsed ta=125c ta=75c ta=25c ta= -25c 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 v gs = -2.6v ta=25c pulsed v gs = -10v v gs =- 4.5v v gs =- 4.0v v gs = -3.0v v gs = -2.4v 0.001 0.01 0.1 1 10 01234 v ds = -10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 0.01 0.1 1 10 0 0.5 1 1.5 v gs =0v pulsed ta=125c ta=75c ta=25c ta=-25c 0 1 2 3 4 0246810 v gs = -2.4v ta=25c pulsed v gs = -2.6v v gs = -4.0v 10 100 1000 0.1 1 10 v gs = -10v pulsed ta=125c ta=75c ta=25c ta= -25c 0.1 1 10 0.01 0.1 1 10 v ds = -10v pulsed ta= -25c ta=25c ta=75c ta=125c 10 100 1000 0.1 1 10 v gs = -4.0v pulsed ta=125c ta=75c ta=25c ta= -25c fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.5 static drain-source on-state resistance vs. drain current( ) fig.7 static drain-source on-state resistance vs. drain current( ) fig.9 reverse drain current vs. sourse-drain voltage fig.8 forward transfer admittance vs. drain current drain current : -i d [a] drain-source voltage : - v ds [ v ] drain-source voltage : -v ds [v] drain current : - i d [a] drain current : -i d [a] gate-source voltage : -v gs [v] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] forward transfer admittance : |yfs| [s] drain-current : -i d [ a ] reverse drain current : -is [a] source-drain voltage : -v sd [v] fig.6 static drain-source on-state resistance vs. drain current( ) drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] fig.4 static drain-source on-state resistance vs. drain current( ) drain-current : -i d [ a ] static drain-source on-state resistance : r ds (on)[m ? ] v gs = -10v v gs = -4.5v 6/8 2010.07 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
SH8M41 10 100 1000 10000 0.01 0.1 1 10 100 ciss crss ta=25c f=1mhz v gs =0v coss 0 2 4 6 8 10 0 2 4 6 8 10121416 ta=25c v dd =-40v i d = -2.6a r g =10? pulsed 1 10 100 1000 10000 0.01 0.1 1 10 t f t d (on) t d (off) ta=25c v dd =-40v v gs =-10v r g =10? pulsed t r 0 100 200 300 400 500 0 5 10 15 ta=25c pulsed i d = -2.6a i d = -1.3a fig.10 static drain-source on-state resistance vs. gate source voltage static drain-source on-state resistance : r ds (on)[m ? ] gate-source voltage : -v gs [v] fig.12 dynamic input characteristics fig.11 switching characteristics switching time : t [ns] drain-current : -i d [a] gate-source voltage : -v gs [v] total gate charge : qg [nc] fig.13 typical capacitance vs. drain-source voltage drain-source voltage : -v ds [v] capacitance : c [pf] 7/8 2010.07 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
SH8M41 ? measurement circuits fig.2-2 gate charge waveform v g v gs charge q g q gs q gd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) fig.1-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) fig.2-2 gate charge waveform v g v gs charge q g q gs q gd f ig.1-1 switching time measurement circu it v gs r g v d s d.u.t. i d r l v dd f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd fig. 3-1 fig. 3-2 fig. 4-1 fig. 4-2 8/8 2010.07 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
r1010 a www.rohm.com ? 2010 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specified herein is subject to change for improvement without notice. the content specified herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specifications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. great care was taken in ensuring the accuracy of the information specified in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. the products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, commu- nication devices, electronic appliances and amusement devices). the products specified in this document are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any product, such as derating, redunda ncy, fire control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospac e machinery, nuclear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intended to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specified herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law.
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