3.1 - 209 3.1 100v, 10 amp, p-channel, radiation hardened power mosfet in a hermetic metal package radiation hardened power mosfets in hermetic isolated package p-channel om9130stc 4 11 r0 features ? rated as radiation hard ? avalanche energy rated ? isolated hermetic package ? low r ds(on) ? high switching speeds ? screened to tx, txv and s levels description this p-channel power mosfet product is in a hermetic package and features the latest radiation hard power semiconductor. this semiconductor die is processed to achieve hardened characteristics. total dose hardness is available at 100k and 1000k rads with neutron hardness at 1e14 n/cm 2 . dose rate hardness, without current limiting, is to rates of 1e9 rads/sec, and with current limiting 2e12 rads/sec. the heavy ion survival rate, from a single event drain burn out, is a linear energy transfer (let) of 35 at 80 volts. absolute maximum ratings t c = 25c drain source voltage, v ds ..............................................- 100 v drain gate voltage (r gs = 20kw), v dgr .................................- 100 v continuous drain current, i d ...........................................- 10.2 a continuous drain current, i d @ 100c ...................................- 6.4 a pulsed drain current, i dm ...............................................-41 a max. power dissipation, p d ..............................................70 w max. power dissipation, p d @ 100c ......................................32 w linear derating factor .............................................. .51 w/c operating temperature, t j ................................... -55c to +150c storage temperature, t stg .................................... -55c to +175c lead temperature - 1/16 from case for 10 sec ............................ 300c rad hardness rating t c = 25c post radiation - rads characteristic initial 10k 100k 1meg bv dss 100v 100v 100v 95v r ds(on) .60 w .60 w .60 w .86 w v gs 2.0 - 4.0v 2.0 - 4.0v 2.0 - 4.0v 2.0 - 4.0v
3.1 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 om9130stc electrical characteristics: ( t c = 25c unless otherwise noted) static p/n om9130stc (100v, p-channel) parameter min. typ. max. units test conditions bv dss drain-source breakdown 100 v v gs = 0, voltage i d = 250 m a v gs(th) gate-threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 m a i gss gate-body leakage 100 na v gs = 20 v i dss zero gate voltage drain 0.1 0.25 ma v ds = max. rat., v gs = 0 current 0.2 1.0 ma v ds = 0.8 max. rat., v gs = 0, t c = 125 c i d(on) on-state drain current 1 10.2 a v ds 2 v ds(on) , v gs = 10 v r ds(on) static drain-source on-state 0.34 v gs = 10 v, i d = 6 a resistance 1 r ds(on) static drain-source on-state 0.68 v gs = 10 v, i d = 6 a,, resistance 1 t c = 125 c dynamic g fs forward transductance 1 2.0 s ( w ) v ds 2 v ds(on) , i d = 6 a c iss input capacitance 500 pf v gs = 0 c oss output capacitance 460 pf v ds = 25 v c rss reverse transfer capacitance 100 pf f = 1 mhz t d(on) turn-on delay time 50 ns v dd = 50 v, i d @ 6 a t r rise time 115 ns r g = 50 w , v ds = 10 v t d(off) turn-off delay time 115 ns t f fall time 115 ns body-drain diode ratings and characteristics i s continuous source current 12 a modified mospower (body diode) symbol showing i sm source current 1 48 a the integral p-n (body diode) junction rectifier. v sd diode forward voltage 1 1.7 v t c = 25 c, i s = -12 a, v gs = 0 v sd diode forward voltage 1 400 - 2.5 v t c = 25 c, i s = -12 a, v gs = 0 t rr reverse recovery time 400 ns t j = 25 c, i f = -12a, dl f /ds = 100 a/ m s 1 pulse test: pulse width 300 m sec, duty cycle 2%. g d s ( w ) .430 .410 .200 .190 .038 max. .005 .120 typ. .537 .527 .665 .645 .420 .410 .150 .140 .750 .500 .100 typ. .035 .025 .045 .035 12 3 pin 1: drain pin 2: source pin 3: gate mechanical outline ordering information omnirel part number om9130s t c d s substrate type screening level s = insulated standard m = commercial n = non-isolated t = tx s = space package - to-257aa feedthrough construction ceramic radiation level - rads d = 10k r = 100k h = 1meg
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