unisonic technologies co., ltd up1753 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2005 unisonic technologies co., ltd qw-r207-017,b high current low v ce(sat) transistor description the utc up1753 is specially designed to have high current and low v ce(sat) to suit for power amplifier application and power switching application. features *v ce(sat) typ is below 300mv at 5a * max continuous current 6 a * bv ceo is 100v minimum sot-223 1 *pb-free plating product number: up1753l ordering information ordering number pin assignment normal lead free plating package 1 2 3 packing up1753-aa3-r up1753l-aa3-r sot-223 b c e tape reel up1753-aa3-t up1753l-aa3-t sot-223 b c e tube up1753l-aa3-r (1)packing type (2)package type (3)lead plating (1) r: tape reel, t: tube (2) aa3: sot-223 (3) l: lead free plating, blank: pb/sn
up1753 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r207-017,b absolute maximum ratings parameter symbol ratings unit collector-base voltage v cbo 200 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 6 v peak pulse current i cm 10 a continuous collector current i c 6 a power dissipation (ta =25
) p d 3 w junction temperature t j +150
storage temperature t stg -55 ~ +150
note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings onl y and functional device operat ion is not implied. electrical characteristics ta= 25
(unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =100a 200 300 v collector-emitter breakdown voltage bv ceo i c =10ma (note1) 100 120 v emitter-base breakdown voltage bv ebo i e =100a 6 8 v collector cut-off current i cbo v cb =150v 10 na collector cut-off current i cer v ce =150v, r 1k ? 10 na emitter cut-off current i ebo v eb =6v 10 na collector-emitter saturation voltage v ce(sat) i c =0.1a, i b =5ma (note1) i c =2a, i b =100ma (note1) i c =5a, i b =500ma (note1) 50 150 330 mv mv mv base-emitter saturation voltage v be(sat) i c =5a, i b =500ma (note1) 1250 mv base-emitter turn-on voltage v be(on) i c =5a, v ce =2v (note1) 1100 mv i c =10ma, v ce =2v 100 200 i c =2a, v ce =2v (note1) 100 200 300 i c =4a, v ce =2v (note1) 50 100 static forward current transfer ratio h fe i c =10a, v ce =2v (note1) 20 transition frequency f t i c =100ma, v ce =10v f=50mhz 100 mhz output capacitance c ob v cb =10v, f=1mhz 38 pf t on 50 ns switching times t off i c =1a, v cc =10v i b1 =i b2 =100ma 1600 ns note: 1.measured under pulsed conditions. pulse width=300s. duty cycle 2%,
up1753 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r207-017,b typical characteristics i c /i b =10 0 0. 2 0. 4 0. 6 0. 8 0.01 0.1 1 10 100 collector-emitter saturation voltagevs. collector current collector current, i c (a) collector-emitter saturation voltage, v ce( sat ) (v) 0 0. 4 1. 4 0.01 0.1 1 100 dc current gain vs. collector current collector current, i c (a) dc current gain, h fe 0. 8 1. 2 i c /i b =50 v ce =1v v ce =5v 10 0. 2 0. 6 1. 0 1. 6 0.5 1.0 2.0 0.001 0.01 0.1 1 10 100 base-emitter saturation vs. collector current base-emitter saturation, v be(sat) (v) 1.5 0.6 0.8 1.2 0.001 0.01 0.1 1 10 100 base-emitter turn-on voltage vs. collector current collector current, i c (a) base-emitter, v be (v) 1.0 0.4 i c /i b =10 collector current, i c (a) i c /i b =50 v ce =1v 0. 01 110100 collector-emitter voltage, v ce (v) safe operating area collector current , i c (a) 0.1 1 ta=25 0.1 10 dc 1s 100ms 10ms 1ms 300
up1753 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r207-017,b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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